Patents Assigned to Tokyo University of Science Educational Foundation Administrative Organization
  • Publication number: 20100025617
    Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A (ZnxTi1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.
    Type: Application
    Filed: July 24, 2009
    Publication date: February 4, 2010
    Applicants: CANON KABUSHIKI KAISHA, KYOTO UNIVERSITY, TOKYO INSTITUTE OF TECHNOLOGY, SOPHIA UNIVERSITY, UNIVERSITY OF YAMANASHI, National Institute of Advanced Industrial Sciences and Technology, Tokyo University of Science Educational Foundation Administrative Organization
    Inventors: Makoto Kubota, Kaoru Miura, Toshihiro Ifuku, Jumpei Hayashi, Masaki Azuma, Olga Alexandrovna Smirnova, Hiroshi Funakubo, Hiroshi Uchida, Nobuhiro Kumada, Satoshi Wada, Takashi Iijima, Soichiro Okamura
  • Publication number: 20100021866
    Abstract: A first cell mass substantially containing only either one of mesenchymal cells or epithelial cells and a second cell mass substantially containing only the other one of the cells are positioned in contact with each other inside a support carrier which can maintain a condition of cell contact; and cultured to obtain a tooth having a specific cell placement. Preferably, after the culturing, the support carrier having both cell masses is cultured with kidney cells.
    Type: Application
    Filed: May 30, 2006
    Publication date: January 28, 2010
    Applicant: TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventors: Takashi Tsuji, Kazuhisa Nakao
  • Publication number: 20090323189
    Abstract: An anti-reflection structure body comprises a base member which is made of glassy carbon and at a surface of which is formed an anti-reflection structure including a cluster of minute projections each having a diameter that contracts towards a tip thereof. The minute projections preferably have an average height of from 200 nm to 3000 nm and an average maximum diameter of from 50 nm to 300 nm, and an average pitch of from 50 nm to 300 nm. An anti-reflection structure body which is easily produced, capable of achieving an anti-reflection effect near to non-reflection, and capable of providing the minute structure even to a member having a high melting point such as quartz glass or the like by transfer or the like can be provided.
    Type: Application
    Filed: August 9, 2007
    Publication date: December 31, 2009
    Applicant: TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventor: Jun Taniguchi
  • Publication number: 20090315432
    Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.
    Type: Application
    Filed: May 22, 2009
    Publication date: December 24, 2009
    Applicants: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Kyoto University, University of Yamanashi, National Institute of Advanced Industrial Science and Technology, Tokyo University of Science Educational Foundation Administrative Organization
    Inventors: Tatsuo Furuta, Kaoru Miura, Kenichi Takeda, Makoto Kubota, Hiroshi Funakubo, Masaki Azuma, Nobuhiro Kumada, Satoshi Wada, Takashi Iijima, Soichiro Okamura
  • Patent number: 7629596
    Abstract: To provide production methods for a 3-D mold, a finely processed product, and a fine pattern molded product in which the depth and the line width can be formed with high precision, a 3-D mold, a finely processed product, a fine-pattern molded product, and an optical element formed with high precision.
    Type: Grant
    Filed: February 21, 2006
    Date of Patent: December 8, 2009
    Assignee: Tokyo University of Science Educational Foundation Administrative Organization
    Inventor: Jun Taniguchi
  • Publication number: 20090281063
    Abstract: The present invention is to provide means to treat breast cancer and/or mastitis by topically administering a non-steroidal antiinflammatory analgetic agent and/or an anticancer agent and allowing them efficiently to arrive into the mammary gland. The present invention provides an iontophoretic preparation for treating breast cancer and/or mastitis which contains a non-steroidal antiinflammatory analgetic agent and/or an anticancer agent as an active ingredient and has a donor to be applied on a nipple part for topical administration of the active ingredient from the nipple part to the mammary gland by application of electric potential.
    Type: Application
    Filed: October 11, 2006
    Publication date: November 12, 2009
    Applicants: KOWA CO., LTD., TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventors: Toshio Inagi, Makoto Kanebako, Hiroshi Terada, Kimiko Makino, Masakazu Toi
  • Publication number: 20090278094
    Abstract: The present invention provides semiconductor nanoparticles which emit light at room temperature and include a sulfide or oxide containing zinc, a Group 11 element in the periodic table, and a Group 13 element in the periodic table as a main component or a sulfide or oxide containing a Group 11 element in the periodic table and a Group 13 element in the periodic table as a main component. For example, the semiconductor nanoparticles are represented by Zn(1-2x)InxAgxS (O<x?0.5).
    Type: Application
    Filed: August 30, 2006
    Publication date: November 12, 2009
    Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY, TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventors: Tsukasa Torimoto, Susumu Kuwabata, Bunsho Ohtani, Tamaki Shibayama, Akihiko Kudo, Miwa Sakuraoka, Tomohiro Adachi
  • Publication number: 20090257907
    Abstract: SmCo-based alloy nanoparticles composed mainly of a SmCo-based alloy containing Sm and Co as constituent elements, wherein the content of metal elements other than Sm and Co is 0.05-20 wt % with respect to the SmCo-based alloy.
    Type: Application
    Filed: March 4, 2009
    Publication date: October 15, 2009
    Applicants: TDK Corporation, Tokyo University of Science Educational Foundation Administrative Organization
    Inventors: Mamoru Satoh, Naoki Toshima, Mutsuko Kinjo, Haruki Kinjo, Shiho Tokonami
  • Publication number: 20090169637
    Abstract: Nanocomposite particles having good solubility and redispersibility in water are provided. The nanocomposite particles include a sugar material and nanoparticles containing a drug to be delivered and a biodegradable polymer, the sugar material being disaccharide, and a mass ratio of the nanoparticles to the disaccharide being within the range of from 40:60 to 60:40.
    Type: Application
    Filed: March 16, 2007
    Publication date: July 2, 2009
    Applicant: TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventors: Kimiko Makino, Hiroshi Terada, Takehisa Nakajima, Keishiro Tomoda
  • Publication number: 20090045072
    Abstract: Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction. In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm?3 or more, but 3.0×1018 cm?3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate.
    Type: Application
    Filed: September 6, 2006
    Publication date: February 19, 2009
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventors: Katsushi Fujii, Kazuhiro Ohkawa, Masato Ono, Takashi Ito
  • Publication number: 20090012314
    Abstract: Disclosed is a novel process for production of lasofoxifene, nafoxidine or an analogue thereof, which comprises reduced number of reaction steps, has a high efficiency, and is practically advantageous. For the production of lasofoxifene or an analogue thereof, a compound represented by the formula (4) is used as an intermediate. The compound represented by the formula (4) can be produced using compounds represented by the formulae (1) to (3) as starting compounds by performing the coupling of the three components in one step.
    Type: Application
    Filed: January 25, 2007
    Publication date: January 8, 2009
    Applicant: TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventors: Isamu Shiina, Yoshiyuki Sano, Kenya Nakata