Patents Assigned to Tokyo
  • Resist composition and method for forming resist pattern
    Patent number: 10437147
    Abstract: A resist composition which includes a polymer compound including a structural unit which is derived from an acrylic ester in which the hydrogen atom bonded to an ?-position carbon atom may be substituted with a substituent and which has a lactone-containing cyclic group containing other electron withdrawing groups such as a cyano group at a side chain terminal, and a compound whose a conjugate acid has an acid dissociation constant (pKa) of less than 3.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: October 8, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takashi Nagamine, Yuta Iwasawa
  • METHODS FOR CYCLIC ETCHING OF A PATTERNED LAYER
    Publication number: 20190304798
    Abstract: Methods and systems for cyclic etching of a patterned layer are described. In an embodiment, a method includes receiving a substrate comprising an underlying layer, a mask layer that exposes portions of an intermediate layer that is disposed between the underlying layer and the mask layer. An embodiment may also include forming a first layer on the mask layer and a second layer on the exposed portions of the intermediate layer, the first layer and the second layer being concurrently formed. Additionally, the method may include removing, concurrently, the first layer and the second layer from the substrate. In such embodiments, the method may include alternating between the forming and the removing until portions of the underlying layer are exposed.
    Type: Application
    Filed: June 19, 2019
    Publication date: October 3, 2019
    Applicant: Tokyo Electron Limited
    Inventors: Alok Ranjan, Vinayak Rastogi
  • TEMPERATURE ADJUSTMENT METHOD
    Publication number: 20190304760
    Abstract: A temperature adjustment method according to one exemplary embodiment is a temperature adjustment method of adjusting a temperature of a loading table on which a workpiece is loaded using a refrigerant. The step of increasing the temperature of the loading table includes a step of adjusting the temperature of the loading table to a first temperature by opening an expansion valve between an output terminal of a condenser and an input terminal of a heat exchange unit and adjusting an opening degree of the expansion valve, and a step of adjusting the temperature of the loading table to a second temperature by opening the expansion valve, inputting heat to the loading table, opening a flow dividing valve between an output terminal of a compressor and the input terminal of the heat exchange unit, and adjusting an opening degree of the flow dividing valve.
    Type: Application
    Filed: April 2, 2019
    Publication date: October 3, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akiyoshi MITSUMORI, Shin YAMAGUCHI
  • SUBSTRATE PROCESSING SYSTEM AND METHOD OF DETERMINING FLOW RATE OF GAS
    Publication number: 20190301912
    Abstract: A substrate processing system according to an exemplary embodiment includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.
    Type: Application
    Filed: March 22, 2019
    Publication date: October 3, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Hiroshi YAZAKI, Yasuhiro SHOJI
  • TEMPERATURE ADJUSTMENT SYSTEM
    Publication number: 20190304759
    Abstract: A heat exchange unit is disposed inside the loading table and exchanges heat using a refrigerant. A supply line is disposed between an output terminal of the condenser and an input terminal of the heat exchange unit and sends the refrigerant to the heat exchange unit. An expansion valve is disposed in the supply line. A vapor line is disposed between an output terminal of the compressor and an output terminal of the expansion valve. A flow dividing valve is disposed in the vapor line. A measurement device measures the temperature of the loading table. The control unit adjusts the heat input to the loading table and an opening degree of each of the expansion valve and the flow dividing valve based on the temperature of the loading table measured by the measurement device.
    Type: Application
    Filed: April 2, 2019
    Publication date: October 3, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akiyoshi MITSUMORI, Shin YAMAGUCHI
  • CLEANING METHOD
    Publication number: 20190304761
    Abstract: The step of removing the reaction product includes a step of loading a dummy wafer on the loading table, a step of increasing the temperature of the loading table, and a step of removing the reaction product after increasing the temperature of the loading table. In the step of increasing the temperature of the loading table, the temperature of the loading table is increased by opening an expansion valve between an output terminal of a condenser and an input terminal of the heat exchange unit, inputting heat to the loading table, opening a flow dividing valve between an output terminal of a compressor and the input terminal of the heat exchange unit, and adjusting an opening degree of the flow dividing valve.
    Type: Application
    Filed: April 2, 2019
    Publication date: October 3, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akiyoshi MITSUMORI, Shin YAMAGUCHI
  • PLASMA PROCESSING APPARATUS AND METHOD OF TRANSFERRING WORKPIECE
    Publication number: 20190304824
    Abstract: A plasma processing apparatus includes a placing table having a placing surface on which a workpiece is placed to be subjected to a plasma processing; an elevator configured to raise and lower the workpiece with respect to the placing surface of the placing table; and an elevator controller configured to control the elevator, during a period until a transfer of the workpiece begins after a completion of the plasma processing on the workpiece, to hold the workpiece at a position where the placing surface of the placing table and the workpiece are spaced apart from each other by a distance that prevents an intrusion of a reaction product, and control the elevator, when the transfer of the workpiece begins, to raise the workpiece from the position where the workpiece is held.
    Type: Application
    Filed: March 29, 2019
    Publication date: October 3, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki SUZUKI, Wataru TAKAYAMA, Takahiro MURAKAMI, Kimihiro FUKASAWA, Shinichiro HAYASAKA
  • Poly-phased inductively coupled plasma source
    Patent number: 10431425
    Abstract: Embodiments of systems and methods for a poly-phased inductively coupled plasma source are described. In an embodiment, a system may include a metal source configured to supply a metal for ionized physical vapor deposition on a substrate in a process chamber. The system may also include a high-density plasma source configured to generate a dense plasma, the high-density plasma source comprising a plurality of inductively coupled antennas. Additionally, the system may include a substrate bias source configured to provide a potential necessary to thermalize and ionize the plasma. In such embodiments, each antenna is configured to receive power at a phase orientation determined according to a phase arrangement.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: October 1, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Jozef Brcka
  • Film forming method
    Patent number: 10431450
    Abstract: A film forming method for a target object including a main surface and grooves formed in the main surface, includes a step of supplying of a first gas into the processing chamber, and a step of supplying a second gas and a high frequency power for plasma generation into the processing chamber to generate in the processing chamber a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. A film containing silicon and oxygen is selectively formed on the main surface of the target object except the grooves.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: October 1, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Kenji Ouchi
  • Filtration filter, filtration method, production method of purified liquid chemical product for lithography, and method of forming resist pattern
    Patent number: 10429738
    Abstract: A filtration filter used for filtering a liquid chemical for lithography, provided with a polyimide resin porous membrane; a filtration method including allowing a liquid chemical for lithography to pass through the filtration filter; and a production method of a purified liquid chemical product for lithography, including filtering a liquid chemical for lithography by the filtration method.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: October 1, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akihiko Nakata, Akihito Morioka, Tsukasa Sugawara
  • Load lock apparatus and substrate processing system
    Patent number: 10431481
    Abstract: A load lock apparatus having a load lock chamber, which is connected to a vacuum transfer chamber configured to transfer a substrate under a vacuum pressure state via a communication hole which is opened and closed by a gate valve, and configured to be capable of switching an inner pressure into an atmospheric pressure state and the vacuum pressure state, is provided. The load lock apparatus includes a load lock chamber main body in which a substrate container having an attachable/detachable cover is carried, wherein the communication hole is formed in a side surface of the load lock chamber; and a cover attaching/detaching mechanism installed at a height position vertically arranged with the communication hole in the load lock chamber; and an elevating mechanism including a mounting table on which the substrate container is loaded and configured to lift and lower the mounting table.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: October 1, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Shinji Wakabayashi
  • Coating agent for reducing roughness of resist pattern, and method for forming resist pattern in which roughness is reduced
    Patent number: 10429735
    Abstract: A coating agent capable of favorably reducing the roughness of a resist pattern, and a method for forming a resist pattern in which roughness is reduced. The method includes coating the resist pattern with the coating agent. The coating agent is a composition including a resin, an amine compound, and a solvent, the amine compound having an aliphatic hydrocarbon group having 8 to 20 carbon atoms and having 1 or more unsaturated double bond and a group having a specific amount of ethylene oxide and/or propylene oxide added thereto.
    Type: Grant
    Filed: October 4, 2017
    Date of Patent: October 1, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventor: Ryoji Watanabe
  • Pressure measuring device and exhaust system using the same, and substrate processing apparatus
    Patent number: 10429263
    Abstract: There is provided a pressure measuring device including: a first pressure gauge connected to a processing chamber configured to process a process target and configured to measure an internal pressure of the processing chamber when the process target is being processed; a second pressure gauge connected to the processing chamber; and a first switching valve configured to disconnect the second pressure gauge from the processing chamber when the process target is being processed inside the processing chamber.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: October 1, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Kikuchi, Tsuneyuki Okabe, Satoru Koike
  • Base generator, base-reactive composition containing said base generator, and base generation method
    Patent number: 10428014
    Abstract: The present invention relates to a compound represented by the general formula (A), a base generator comprising the compound, a base-reactive composition which comprises the base generator and a base-reactive compound, as well as a method for generating a base, etc.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: October 1, 2019
    Assignees: FUJIFILM Wako Pure Chemical Corporation, Tokyo University of Science Foundation
    Inventors: Nobuhiko Sakai, Kosuke Yanaba, Koji Arimitsu
  • Method for producing B cell population
    Patent number: 10428304
    Abstract: It is an object of the present invention to provide a method for easily producing an antigen-specific B cell population comprising IgG-positive B cells specific to a specific antigen. The present invention provides a method for producing a B cell population, comprising culturing B cells, in which the expression of a Bach2 gene has been increased, in the presence of a means for acting on CD40 and/or a BAFF receptor.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: October 1, 2019
    Assignees: TOKYO UNIVERSITY OF SCIENCE FOUNDATION, KANEKA CORPORATION
    Inventors: Daisuke Kitamura, Tomoyuki Nakaishi
  • Method of quasi-atomic layer etching of silicon nitride
    Patent number: 10431470
    Abstract: A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: October 1, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sonam D. Sherpa, Alok Ranjan
  • Wet etching method, substrate liquid processing apparatus, and storage medium
    Patent number: 10431448
    Abstract: A wet etching method according to the present disclosure includes rotating a substrate, supplying an etching chemical liquid to a first surface (a surface on which a device is formed) of the rotating substrate, and supplying an etching inhibiting liquid (DIW) to a second surface (a surface on which no device is formed) of the substrate while supplying the chemical liquid to the substrate. The etching inhibiting liquid wraps around the first surface through an edge of the substrate and reaches a first region extending from the edge of the substrate on the peripheral edge portion of the first surface to a first radial position located radially inward from the edge on the first surface. As a result, bevel etching of an upper layer of a substrate on which a film having two layers is formed may be satisfactorily performed.
    Type: Grant
    Filed: January 25, 2016
    Date of Patent: October 1, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Hiromitsu Nanba
  • Parallax calculating apparatus
    Patent number: 10430971
    Abstract: A parallax calculating apparatus is provided with: a processor configured to perform, on each of a plurality of types of block shapes that are different from each other, (i) a parallax calculation process, (ii) a block group setting process, and (iii) a cost calculation process, by using a pair of images photographed by a stereo camera; and a selector configured to perform, on each of a plurality of pixels that constitute the image, a parallax selection process of setting a parallax value of a block in which a cost associated by the cost calculation process is minimum, as a parallax of a target pixel in which the parallax is to be obtained, from among a plurality of blocks, each of which includes the target pixel and which respectively correspond to the plurality of types of block shapes.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: October 1, 2019
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Junya Ueno, Keiji Saneyoshi, Hiroaki Iwata
  • Protective film forming method
    Patent number: 10431452
    Abstract: A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. A surface of the silicon-containing underfilm formed on the flat surface of the substrate is nitrided by supplying a nitriding gas converted to plasma to the silicon-containing underfilm terminated with fluorine such that a silicon adsorption site is formed on the surface of the silicon-containing underfilm formed on the flat surface of the substrate. A silicon-containing gas is adsorbed on the silicon adsorption site by supplying the silicon-containing gas to the silicon-containing underfilm.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: October 1, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Yutaka Takahashi, Masahiro Murata
  • Method of recovering resist pattern
    Patent number: 10429740
    Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: October 1, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Junichi Tsuchiya, Rikita Tsunoda, Daichi Takaki, Miki Shinomiya, Masafumi Fujisaki