Abstract: A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

Abstract: A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.

Abstract: A method and apparatus multiplies a past sample a time lag ? older than a current sample by a quantized multiplier ?? on a frame by frame basis, subtracts the multiplication result from the current sample, codes the subtraction result, and codes the time lag using a fixed-length coder if the multiplier ?? is smaller than 0.2 or if information about the previous frame is unavailable, or codes the time lag using a variable-length coder if ?? is not smaller than 0.2. A multiplier ? is coded by a multiplier coder and the multiplier ?? obtained by decoding the multiplier ? is outputted. The process is performed for each frame.

Abstract: A film forming apparatus is provided with a processing chamber having a substrate holding table for holding a substrate to be processed inside the container; a gas material generation unit arranged outside the processing chamber, for generating a gas material by evaporating or sublimating a film forming source material including a metal; a gas material supply unit for supplying the processing chamber with the gas material; and a transport path for transporting the gas material to the gas material supply unit from the gas material generation unit. The film forming apparatus is characterized in that a metal-containing layer is formed on an organic layer including a light emitting layer on the target substrate.

Abstract: Installed in a probe device is a holding member for inspection which can be mounted on a chuck. The holding member for inspection includes a support plate capable of mounting thereon a chip in which the power device is formed; pins for positioning the chip mounted on the support plate; and a metal film formed on a surface of the support plate in a range from a mounting area on which the chip is mounted to an exposed area on which the chip is not mounted. When inspecting the power device, the chip is fixed onto the mounting area in the holding member for inspection, one probe pin is brought into contact with a terminal on a top surface of the chip; and another probe pin is brought into contact with the metal film in the exposed area.

Abstract: A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.

Abstract: It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water.

Abstract: A method for manufacturing a probe needle having beams and a contactor placed on tips of the beams comprises preparing a Si wafer 20, forming a seed layer 21 on the Si wafer 20, and forming grooves in a desired shape of the beams on the seed layer 21 by patterning a photoresist 23. Subsequently, the grooves are filled up with metal-plated layers 24a, 24b to form the desired shape of beams.

Abstract: There is provided a method that can curtail the time for forming a particle layer and that can permit the production of a nanoparticle monolayer having stable optical characteristics at a high coating ratio and homogeneity in a reproducible and an efficient manner. In the formation of the nanoparticle monolayer on a substrate, said substrate is immersed as the anode or cathode together with an opposite electrode of the cathode or anode in a solution in which nanoparticles are suspended in a dispersion medium, and then a direct-current voltage is applied to electrophoretically deposit the nanoparticle monolayer on said substrate.

Abstract: When write request signal is input from a host device 10, an SSD 20 inputs data input from the host device 10 in an encoder 30 sequentially and controls a RRAM 24 to store data output from the encoder 30. When size of data stored in the RRAM 24 reaches predetermined size Sref, the SSD 20 controls the RRAM 24 to read out data of size of the predetermined size Sref, inputs read data from the RRAM 24 in the encoder 32, and controls a flash memory 22 to store data output from the encoder 32. This configuration accomplishes the increase of the data write speed and improvement of reliability of the data.

Abstract: A film forming apparatus that produces a thin film by repeating cycles of sequentially supplying reaction gases including a loading table in a vacuum vessel having substrate mounting areas; reaction gas supplying units arranged in a peripheral direction with intervals to supply the reaction gases onto substrates; separating areas separating atmospheres of the processing areas; separation gas supplying units supplying separation gases to render a supply amount to outer peripheral side separation areas greater than a supply amount to center side separation areas; a ceiling face surrounding narrow areas together with the loading table to enable the separation gases flow from the separating areas to the processing areas along the center side separation areas and the outer peripheral side separation areas a vacuum ejecting mechanism; and a rotary mechanism rotating the loading table relative to the reaction gas supplying units and the separating areas.

Abstract: There is provided a transfer module capable of enhancing strength of a transfer chamber. An openable/closable cover is provided at the transfer chamber configured to be evacuable to vacuum. A robot is provided in the transfer chamber. The robot has hollow rotation shafts at a part of a device for transferring a processing target object W. A pillar for supporting the cover in a closed state is positioned within the hollow rotation shafts of the robot. Since the pillar supports a load applied to the cover by an atmospheric pressure, a thickness of the cover can be reduced, so that manufacturing cost can be reduced. Further, the robot is not interfered by the pillar when the robot rotates the processing target object W about the rotation shafts or moves the processing target object W in a radial direction.

Abstract: A print head control device 4 in an ink jet printer IJP includes a print head drive board 42c3, a PCIe, and an image processing computer 42c. The print head drive board 42c3 is configured by a circuit between the PCIe and the print head drive board 42c3, the circuit having an interface function and a print head drive function integrated therein. This circuit includes an FPGA configured to perform a rearrangement processing such that assigned page data is matched to alignment of print heads 50. Further, a device driver 42c7 which is control software for the print head drive board 42c3 performs an internal transfer processing of the assigned page data to the print head drive board 42c3.

Abstract: The present invention is a system including: an imprint unit transferring a transfer pattern to a coating film on a substrate using a template to form a predetermined pattern in the coating film; a treatment station connected to the imprint unit and performing a predetermined treatment on the template; a template carry-in/out station connected to the treatment station, capable of keeping templates, and carrying the template in/out from/to the treatment station; a carry line provided through the imprint unit and carrying the template between the imprint unit and the treatment station; and a substrate carry-in/out station connected to the imprint unit, capable of keeping substrates, and carrying the substrate in/out from/to the imprint unit.

Abstract: An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.

Abstract: A substrate processing apparatus includes a substrate holding member configured to rotate along with a wafer (W) held thereon and a drain cup (51) configured to surround the wafer (W). A cleaning process is performed by rotating the wafer (W) while supplying a process liquid onto the wafer (W), and then a rinsing process is performed by rotating the wafer (W) in a similar way while supplying a rinsing liquid onto the wafer (W). The rinsing process is performed by first adjusting a rotational speed of the wafer (W) to be the same as the rotational speed used in the cleaning process while supplying the rinsing liquid, and then raising a liquid level of the rinsing liquid inside the drain cup (51) by decreasing the rotational speed of the wafer (W) or increasing a flow rate of the rinsing liquid, and raising a reach position of the rinsing liquid on the outer sidewall of the drain cup (51) by increasing the rotational speed of the wafer (W).

Abstract: A wafer grinding method and a wafer grinding machine are disclosed for grinding a wafer by executing both the rough grinding process and the finish grinding process. After the rough grinding process before the finish grinding process, the wafer thickness is measured with a noncontact-type thickness gauge, and during the finish grinding process, the finish thickness is finely adjusted by use of a contact-type thickness gauge and referring to the measurement data of the noncontact-type thickness gauge.

Abstract: A film peeling device for peeling a film (11) adhered to a front surface of a wafer (20), on the back surface of which a dicing tape (3) is adhered, the wafer is integrated with a mount frame (36) into one body, comprises: a movable table (31), which can be moved horizontally to support the wafer and the mount frame while the surface protection film is being directed upward; a covering means (80) for covering an adhesive face (3a) of the dicing tape, which is exposed between the mount frame and the wafer at one end (28) of the wafer; and a adhering means (46) for adhering a peeling tape (4) to the film at the end of the wafer. The film is peeled from the front surface of the wafer by moving the movable table from the other end (29) of the wafer to one end after the peeling tape has adhered. Due to the foregoing, while the peeling tape is being prevented from adhering to the dicing tape, the film can be peeled from the front surface of the wafer in a shorter period of time.

Abstract: Disclosed is a siRNA-encapsulating polymeric micelle complex (a polyion complex) having high monodispersibility and structural stability and excellent in the ability of transporting siRNA into a cell. Further disclosed are a nucleic acid delivery device, a nucleic acid delivery kit, a pharmaceutical composition, and a gene therapy agent, each of which uses the complex. The polyion complex is characterized by comprising: a block copolymer composed of a polyethylene glycol moiety and a polycation moiety having a thiol group as a side chain at the terminus; and siRNA.

Abstract: A substrate cleaning method can uniformly removing particles from substrates at a high removing efficiency. The substrate cleaning method includes the steps of immersing substrates W in a cleaning liquid in a cleaning tank 12, and generating ultrasonic waves in the cleaning liquid contained in the cleaning tank. A region in the cleaning tank toward which the cleaning liquid is supplied is varied with respect to a vertical level in the step of generating ultrasonic waves in the cleaning liquid while the cleaning liquid is being supplied into the cleaning tank.