Abstract: The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.

Abstract: Installed in a probe device is a holding member for inspection which can be mounted on a chuck. The holding member for inspection includes a support plate capable of mounting thereon a chip in which the power device is formed; pins for positioning the chip mounted on the support plate; and a metal film formed on a surface of the support plate in a range from a mounting area on which the chip is mounted to an exposed area on which the chip is not mounted. When inspecting the power device, the chip is fixed onto the mounting area in the holding member for inspection, one probe pin is brought into contact with a terminal on a top surface of the chip; and another probe pin is brought into contact with the metal film in the exposed area.

Abstract: A film forming apparatus is provided with a processing chamber having a substrate holding table for holding a substrate to be processed inside the container; a gas material generation unit arranged outside the processing chamber, for generating a gas material by evaporating or sublimating a film forming source material including a metal; a gas material supply unit for supplying the processing chamber with the gas material; and a transport path for transporting the gas material to the gas material supply unit from the gas material generation unit. The film forming apparatus is characterized in that a metal-containing layer is formed on an organic layer including a light emitting layer on the target substrate.

Abstract: A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.

Abstract: It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water.

Abstract: A method is disclosed for adjusting an arrangement of coordinates in an imaging area of an imaging component in a substrate imaging plane in a substrate position detection apparatus that detects a position of a substrate in accordance with an image taken of a circumferential portion of the substrate by the imaging component, the apparatus being arranged near a rotatable susceptor on which the substrate is placed and a substrate transferring apparatus prepared separately from the susceptor and configured to horizontally drive a supporting pin for transferring the substrate to and/or from the susceptor.

Abstract: A method and apparatus multiplies a past sample a time lag ? older than a current sample by a quantized multiplier ?? on a frame by frame basis, subtracts the multiplication result from the current sample, codes the subtraction result, and codes the time lag using a fixed-length coder if the multiplier ?? is smaller than 0.2 or if information about the previous frame is unavailable, or codes the time lag using a variable-length coder if ?? is not smaller than 0.2. A multiplier ? is coded by a multiplier coder and the multiplier ?? obtained by decoding the multiplier ? is outputted. The process is performed for each frame.

Abstract: In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode.

Abstract: A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

Abstract: A method for manufacturing a probe needle having beams and a contactor placed on tips of the beams comprises preparing a Si wafer 20, forming a seed layer 21 on the Si wafer 20, and forming grooves in a desired shape of the beams on the seed layer 21 by patterning a photoresist 23. Subsequently, the grooves are filled up with metal-plated layers 24a, 24b to form the desired shape of beams.

Abstract: A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.

Abstract: When write request signal is input from a host device 10, an SSD 20 inputs data input from the host device 10 in an encoder 30 sequentially and controls a RRAM 24 to store data output from the encoder 30. When size of data stored in the RRAM 24 reaches predetermined size Sref, the SSD 20 controls the RRAM 24 to read out data of size of the predetermined size Sref, inputs read data from the RRAM 24 in the encoder 32, and controls a flash memory 22 to store data output from the encoder 32. This configuration accomplishes the increase of the data write speed and improvement of reliability of the data.

Abstract: The present invention is a system including: an imprint unit transferring a transfer pattern to a coating film on a substrate using a template to form a predetermined pattern in the coating film; a treatment station connected to the imprint unit and performing a predetermined treatment on the template; a template carry-in/out station connected to the treatment station, capable of keeping templates, and carrying the template in/out from/to the treatment station; a carry line provided through the imprint unit and carrying the template between the imprint unit and the treatment station; and a substrate carry-in/out station connected to the imprint unit, capable of keeping substrates, and carrying the substrate in/out from/to the imprint unit.

Abstract: There is provided a method that can curtail the time for forming a particle layer and that can permit the production of a nanoparticle monolayer having stable optical characteristics at a high coating ratio and homogeneity in a reproducible and an efficient manner. In the formation of the nanoparticle monolayer on a substrate, said substrate is immersed as the anode or cathode together with an opposite electrode of the cathode or anode in a solution in which nanoparticles are suspended in a dispersion medium, and then a direct-current voltage is applied to electrophoretically deposit the nanoparticle monolayer on said substrate.

Abstract: There is provided a transfer module capable of enhancing strength of a transfer chamber. An openable/closable cover is provided at the transfer chamber configured to be evacuable to vacuum. A robot is provided in the transfer chamber. The robot has hollow rotation shafts at a part of a device for transferring a processing target object W. A pillar for supporting the cover in a closed state is positioned within the hollow rotation shafts of the robot. Since the pillar supports a load applied to the cover by an atmospheric pressure, a thickness of the cover can be reduced, so that manufacturing cost can be reduced. Further, the robot is not interfered by the pillar when the robot rotates the processing target object W about the rotation shafts or moves the processing target object W in a radial direction.

Abstract: A film forming apparatus that produces a thin film by repeating cycles of sequentially supplying reaction gases including a loading table in a vacuum vessel having substrate mounting areas; reaction gas supplying units arranged in a peripheral direction with intervals to supply the reaction gases onto substrates; separating areas separating atmospheres of the processing areas; separation gas supplying units supplying separation gases to render a supply amount to outer peripheral side separation areas greater than a supply amount to center side separation areas; a ceiling face surrounding narrow areas together with the loading table to enable the separation gases flow from the separating areas to the processing areas along the center side separation areas and the outer peripheral side separation areas a vacuum ejecting mechanism; and a rotary mechanism rotating the loading table relative to the reaction gas supplying units and the separating areas.

Abstract: A print head control device 4 in an ink jet printer IJP includes a print head drive board 42c3, a PCIe, and an image processing computer 42c. The print head drive board 42c3 is configured by a circuit between the PCIe and the print head drive board 42c3, the circuit having an interface function and a print head drive function integrated therein. This circuit includes an FPGA configured to perform a rearrangement processing such that assigned page data is matched to alignment of print heads 50. Further, a device driver 42c7 which is control software for the print head drive board 42c3 performs an internal transfer processing of the assigned page data to the print head drive board 42c3.

Abstract: An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.

Abstract: There is provided a novel hyperbranched polymer in which the refractive index is precisely controlled while retaining its hyperbranched structure, and a method for producing the hyperbranched polymer. Further, there is also provided an optically and thermally stable novel hyperbranched polymer in which the desired refractive index is precisely controlled, and a method for producing the hyperbranched polymer. The hyperbranched polymer has, as a branched structure, a repeating unit structure produced from two dithiocarbamate compounds each having a vinyl structure, at the polymerization initiation site having a vinyl structure. A specific example of the hyperbranched polymer can be produced by subjecting to a living radical polymerization N,N-diethyldithiocarbamylmethylstyrene in the presence of N,N-diethyldithiocarbamylethyl methacrylate.

Abstract: A substrate cleaning method can uniformly removing particles from substrates at a high removing efficiency. The substrate cleaning method includes the steps of immersing substrates W in a cleaning liquid in a cleaning tank 12, and generating ultrasonic waves in the cleaning liquid contained in the cleaning tank. A region in the cleaning tank toward which the cleaning liquid is supplied is varied with respect to a vertical level in the step of generating ultrasonic waves in the cleaning liquid while the cleaning liquid is being supplied into the cleaning tank.