Abstract: Provided are a HJT cell having high photoelectric conversion efficiency and a method for preparing the same. The HJT cell includes an N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiO2 layer, a C-doped SiO2 layer, a doped N-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a front surface of the N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiO2 layer, a C-doped SiO2 layer, a doped P-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a back surface of the N-type crystalline silicon wafer. The doped P-type amorphous silicon layer includes a lightly B-doped amorphous silicon layer and a heavily B-doped amorphous silicon layer.

Abstract: The present application belongs to the technical field of solar cells, and relates to a p-type bifacial solar cell with partial rear surface field passivation and a preparation method therefor. The solar cell includes a p-type silicon substrate. At the bottom portion of the p-type silicon substrate are arranged, from top to bottom, a silicon oxide passivation layer, an aluminum oxide passivation layer and a rear side silicon nitride anti-reflection layer. A plurality of boron source-doped layers are embedded in the bottom portion of the p-type silicon substrate. Connected to the bottom of each of the boron source-doped layers is a rear side metal electrode layer, which penetrates each of the silicon oxide passivation layer, the aluminum oxide passivation layer and the rear side silicon nitride anti-reflection layer.

Abstract: A back passivation crystalline silicon solar cell includes an Ag gate finger electrode, a SiNx passivation antireflection layer, an N+ layer, P-type silicon, a back passivation layer, and an Al gate finger electrode, connected sequentially from top to bottom. The Ag gate finger electrode sequentially penetrates through the SiNx passivation antireflection layer and the N+ layer and is connected to the P-type silicon by means of an N++ layer. The Al gate finger electrode penetrates through the back passivation layer and is connected to the P-type silicon by a P+ layer. The back passivation layer is a passivation antireflection laminated structure that includes a SiO2 passivation layer, an AlOx passivation layer, a SiNx antireflection layer, and a SiOxNy antireflection layer, sequentially provided from top to bottom. The solar cell has high carrier selectivity, high temperature stability, excellent interface passivation effect and PID resistance, high conversion efficiency and high stability.

Abstract: The present application belongs to the technical field of solar cells, and relates to a p-type bifacial solar cell with partial rear surface field passivation and a preparation method therefor. The solar cell includes a p-type silicon substrate. At the bottom portion of the p-type silicon substrate are arranged, from top to bottom, a silicon oxide passivation layer, an aluminum oxide passivation layer and a rear side silicon nitride anti-reflection layer. A plurality of boron source-doped layers are embedded in the bottom portion of the p-type silicon substrate. Connected to the bottom of each of the boron source-doped layers is a rear side metal electrode layer, which penetrates each of the silicon oxide passivation layer, the aluminum oxide passivation layer and the rear side silicon nitride anti-reflection layer.