Abstract: A back passivation crystalline silicon solar cell includes an Ag gate finger electrode, a SiNx passivation antireflection layer, an N+ layer, P-type silicon, a back passivation layer, and an Al gate finger electrode, connected sequentially from top to bottom. The Ag gate finger electrode sequentially penetrates through the SiNx passivation antireflection layer and the N+ layer and is connected to the P-type silicon by means of an N++ layer. The Al gate finger electrode penetrates through the back passivation layer and is connected to the P-type silicon by a P+ layer. The back passivation layer is a passivation antireflection laminated structure that includes a SiO2 passivation layer, an AlOx passivation layer, a SiNx antireflection layer, and a SiOxNy antireflection layer, sequentially provided from top to bottom. The solar cell has high carrier selectivity, high temperature stability, excellent interface passivation effect and PID resistance, high conversion efficiency and high stability.