Abstract: The invention relates to a method for manufacturing a two-dimensional laser diode array comprising preparing a structured gallium nitride bulk substrate, a lower cladding layer, a lower light guide layer, a light-emitting layer, electron blocking layers, an upper light guide layer, an upper cladding layer, a subcontact layer, and includes forming, in GaN substrate (1) with thickness of at least 200 ?m, light beam deflectors (15) by applying photoresist on the GaN substrate (1), irradiating it, developing it, and subsequently etching the applied layer in order to obtain the light beam deflectors (15). The invention relates also to a two-dimensional laser diode array manufactured using the method according to the invention.

Abstract: The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0° to 10°.

Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.