Abstract: A device for use in rapidly generating integrated circuit structures is disclosed which provides a plurality of objects and primitives, each primitive having a well of one type of semiconductor conductivity, one FET device of the same conductivity type, one other FET device of an opposite conductivity type, a doped polysilicon conductor connecting together the gates of the FET devices, a positive voltage supply, and a negative or ground voltage supply. This device is particularly defined for rapid transformation into integrated circuit structures that produce integrated circuits having optimized cell structures, minimum overall circuit area, high performance, and reliability.