Abstract: A complementary metal-oxide semiconductor (CMOS) structure for a battery protection circuit and a battery protection circuit therewith. A tri-well technique or a buried layer technique is used for such CMOS structure to allow the battery protection circuit therewith to operate at different low voltage levels. Thereby, low voltage process can be realized to effectively reduce the cost of the chip and simplify the design.
Abstract: An adjustable circuit for voltage division comprises a serial resistor Rn(n=1, 2 . . . n) symmetrically mapped, connected in series, and paired in parallel with a switch Sn or Sn′ apiece, wherein the switches Sn and Sn′ are oppositely operated, namely, when the former is turned “ON/OFF”, the latter is turned “OFF/ON” to thereby hold the current unchanged to obtain desired output voltage(s) by proper control of the switches and accordingly a valid portion of voltage-dividing resistor &Dgr;R′.