Abstract: An improved method for initiating the inductive heating of semiconductors in the float zone refining process in which the oscillator circuit generating the required radio frequency energy is initially powered from a constant current source thereby controlling the rate of temperature rise for the semiconductor.
Abstract: Apparatus for the float zone refining of large semiconductor crystals. Additional support in the form of lightweight pins is provided for the growing monocrystalline rod to hold the rod on the proper vertical axis. The pins protrude from the telescoping inner wall portion of the refining enclosure. This telescoping enclosure portion allows the pins to be in synchronous motion with the monocrystalline rod and also reduces the overall height of the apparatus.
Type:
Grant
Filed:
May 8, 1978
Date of Patent:
March 24, 1981
Assignee:
Topsil A/S
Inventors:
Noel De Leon, Arno I. M. Larsen, Poul E. Knudsen, Erik H. Jensen
Abstract: An induction heating coil for the float zone melting of semiconductor materials. The distribution of current on the surfaces of the coil is modified by altering the surfaces of the coil. The alteration of the surfaces is in the form of selectively positioned saw slots and solid conductor strips. The current distribution can be controlled independently on the top and bottom surfaces of the coil.
© 2024 Justia
