Abstract: Solid phase reaction products are employed as reflecting planes of a semiconductor laser facing each other with an active layer in between, which significantly improve its performance and productivity.
Type:
Grant
Filed:
July 24, 1984
Date of Patent:
March 3, 1987
Assignees:
Furukawa Electric Co., Ltd., Toshiaki Ikoma, Tsugunori Okumura
Abstract: A voltage-control type semiconductor switching device is disclosed which includes a pair of controlled electrodes to which a control voltage signal is supplied, and a semiconductive layer formed between the electrodes so as electrically insulative from the electrodes through insulative layers. The semiconductive layer has a channel region and a carrier-storage region which is substantially nonconductive. The channel region is formed laterally along the longitudinal direction of the electrodes, thereby allowing majority carriers such as electrons of the semiconductive layer to flow in the lateral direction. In the current cut-off mode, the carrier-storage region temporarily stores the carriers which move in the direction of thickness of the semiconductive layer due to the electric field created by the voltage. In the current conduction mode, the carrier-storage region releases the carriers stored therein toward the channel region.
Type:
Grant
Filed:
April 7, 1986
Date of Patent:
January 13, 1987
Assignees:
Toshiaki Ikoma, Tokyo Shibaura Denki Kabushiki Kaisha
Abstract: A method for manufacturing compound semiconductor devices includes a step of forming a first oxidized film on a GaAs body and heating it at a high temperature. A second oxidized film is thereafter formed on the body which includes the first oxidized film so as to change it properties, for example, to be easily etched with an etchant.
Type:
Grant
Filed:
August 18, 1977
Date of Patent:
September 26, 1978
Assignees:
Tokyo Shibaura Electric Co., Toshiaki Ikoma