Abstract: According to an embodiment, a semiconductor memory device includes a substrate, a stacked body, a first insulating film, and a first film. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode films extending in a first direction along an upper surface of the substrate and stacked with spacing from each other. An end part of the stacked body has a stepped shape provided with a terrace for each of the electrode films. The first insulating film is provided on the end part of the stacked body. The first film is provided on the first insulating film, and extends in a direction tilted with respect to the first direction.