Patents Assigned to Toth Information System, Inc.
  • Cadmium tin oxide multi-layer laminate and producing method thereof
    Patent number: 7648783
    Abstract: A cadmium tin oxide (Cd1?xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1?xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1?xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1?xSnxO; and (b) sputtering films of Cd1?xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: January 19, 2010
    Assignees: Industrial Research Technology Institute, Toth Information System, Inc.
    Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Shian-Jy Wang, Shu-Hei Wang, John R. Rodgers
  • Cadmium tin oxide multi-layer laminate and producing method thereof
    Publication number: 20060141266
    Abstract: A cadmium tin oxide (Cd1-xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1-xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1-xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1-xSnxO; and (b) sputtering films of Cd1-xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
    Type: Application
    Filed: December 20, 2005
    Publication date: June 29, 2006
    Applicants: Industrial technology Research Institute, Toth Information System, Inc.
    Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Wang, Shu-Hei Wang, John Rodgers