Abstract: In certain embodiments, a method of processing a semiconductor substrate includes positioning a semiconductor substrate in a plasma chamber of a plasma tool. The semiconductor substrate includes a film stack that includes silicon layers and germanium-containing layers in an alternating stacked arrangement, with at least two silicon layers and at least two germanium-containing layers. The method includes exposing, in a first plasma step executed in the plasma chamber, the film stack to a first plasma. The first plasma is generated from first gases that include nitrogen gas, hydrogen gas, and fluorine gas. The method includes exposing, in a second plasma step executed in the plasma chamber, the film stack to a second plasma. The second plasma is generated from second gases comprising fluorine gas and oxygen gas. The second plasma selectively etches the silicon layers.

Abstract: A semiconductor device containing a metal-insulator-semiconductor (MIS) contact and method of forming are described. The method includes providing a semiconductor substrate containing a contact region, depositing an insulator film on the contact region, the insulator film including a mixed oxide material containing TiO2 and at least one additional metal oxide. The method further includes depositing a metal-containing electrode layer abutting the insulator film to form a MIS structure, and heat-treating the MIS structure to scavenge oxygen from the TiO2 to the metal-containing electrode layer to form a MIS contact with oxygen vacancies in the TiO2. According to one embodiment the at least one additional metal oxide is selected from HfO2, ZrO2, Al2O3, and combinations thereof, and the metal-containing electrode layer is selected from the group consisting of Ti metal, Al metal, Hf metal, Zr metal, Ta metal, Nb metal, and a combination thereof.

Abstract: A substrate processing apparatus includes a substrate processing apparatus, including: a substrate processing chamber configured to accommodate a substrate and process the substrate; a piping coupled to the substrate processing chamber to allow a gas for processing the substrate to be introduced therethrough; and a simulation apparatus configured to simulate a path in which the gas for processing the substrate flows through the piping. The simulation apparatus includes: an information acquisition unit configured to acquire gas flow information defined by an operation mode in which the substrate is processed; a path determination unit configured to determine a gas path based on the gas flow information acquired by the information acquisition unit; and a simulation unit configured to simulate a flow of the gas by putting a color defined according to the type of gas on the gas path determined by the path determination unit.

Abstract: A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.

Abstract: In a method for detecting a position of a substrate transfer device including a substrate supporting unit, the light-transmitting optical sensor is moved with respect to a detection target provided at a predetermined relative position with respect to a position where a substrate is to be transferred by the substrate transfer device, and a vertical dimension of the detection target that blocks the optical axis is measured by setting the substrate supporting unit in a first orientation and relatively moving up or down the optical sensor with respect to the detection target. A vertical dimension of the detection target that blocks the optical axis is measured by setting the substrate supporting unit in a second orientation and relatively moving the optical sensor with respect to the detection target. Horizontal coordinates of a reference position of the detection target are obtained based on the measured vertical dimensions in the respective orientations.

Abstract: There is provided an inductively coupled plasma processing apparatus capable of reducing a RF power loss within a high frequency power supply unit (particularly, a matching unit) and capable of enhancing a plasma generation efficiency. In this inductively coupled plasma processing apparatus, a multiple number of closed-loop secondary circuits 96, 98 independent from each other are formed between a coaxial antenna group 54 and a transformer 68. Further, by varying electrostatic capacitances of variable capacitors 64 and 66, secondary currents I2A and I2B flowing through an inner antenna 58 and an outer antenna 60, respectively, of the coaxial antenna group 54 are independently controlled. Accordingly, it is possible to readily control a plasma density distribution on a semiconductor wafer W in a diametrical direction.

Abstract: A substrate cleaning method for cleaning and removing foreign materials adhered to a surface of a substrate includes heating the substrate to peel off the foreign materials from the surface of the substrate by a thermal stress, removing the foreign materials from the surface of the substrate by a temperature gradient created in a proximity of the surface of the substrate, and collecting the foreign materials removed from the surface of the substrate by a collecting unit facing the substrate.

Abstract: In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.

Abstract: A monitoring system enables in-situ monitoring of a solution enclosed within a high-pressure, closed loop environment. The monitoring system includes a calcium fluoride disk that is substantially transparent to infrared light. A hole is configured through the disk and a solution passes through the hole. Solution passing through the hole is analyzed by directing infrared light through the disk and the solution currently moving through the hole in the disk. The light exiting the disk is collected and analyzed to determine the composition of the solution through which the light passed.

Abstract: A large number of fine and deep holes are fanned in a glass substrate with high positional and dimensional accuracy. With a use of an etching of a photolithography technique, a large number of fine holes are formed in a silicon substrate. Hole forming pins are stood in the holes. The silicon substrate is held by a holding member of a hole forming apparatus. The glass substrate is housed in a container having an opened upper surface. The container is heated, and the glass substrate housed in the container is melted. The silicon substrate is lowered using the holding member, and the hole forming pins are inserted into the glass substrate. Thereafter, the container is cooled, and the glass substrate is solidified while having the hole forming pins inserted therein. The glass substrate is taken out from the container, the hole forming pins are dissolved in an aqua regia to thereby form the holes in the glass substrate.

Abstract: An object of the present invention is to finely conduct an inspection of high integration devices by making it possible to form guide holes in a support plate of a probe card in a narrower pitch than in the conventional case of forming the guide holes in a support plate of the same area, and to broaden a range of options for an elastic member which works to urge a probe pin. The present invention has a circuit board and a support plate being placed under the circuit board and supporting the probe pin. In the guide hole formed in the support plate, the probe pin composed of an elastic portion and a pin portion is inserted, and a rip of the pin portion protrudes downward from the support plate. The guide hole has a quadrangular horizontal sectional shape.

Abstract: In a coating apparatus for supplying a mixed solution of a resist solution and a thinner onto a wafer from a nozzle, the nozzle is connected to a mixed solution supply pipe, and the resist solution and the thinner are supplied to the mixed solution supply pipe from a resist solution supply pipe and a thinner supply pipe respectively through a junction pipe. The diameter of the junction pipe is set smaller than those of other supply pipes, whereby the resist solution and the thinner can be mixed efficiently in the junction pipe, and as a result the wafer is coated with the mixed solution so that a uniform film thickness can be obtained within the surface of the wafer.

Abstract: A coating processing apparatus is structured by a rotating cup having an opening portion on the top thereof for housing a substrate, a spin chuck for rotating the substrate in the rotating cup, a lid body having an opening and attached to the rotating cup, a resist solution discharge nozzle for discharging a resist solution onto the substrate through the opening of the lid body, a small lid for blocking up the opening of the lid body, and a protrusion member provided on the underneath surface of the small lid to be positioned inside the rotating cup when the small lid is attached into the opening of the lid body. Thus, adjustment of a film thickness of a coating film after a coating solution is coated can be effectively performed.

Abstract: A wafer to be heat-treated is placed in a heat treatment chamber defined by a heat treatment vessel, and the wafer is heat-treated by radiant heat radiated by a heat source. A gas is supplied through a gas passage formed along the outer surface of an inner wall of the heat treatment vessel and having a portion extending near the heat source. The gas heated in the portion of the gas passage extending near the heat source by the heat source is blown toward a substantially central portion of the wafer as complementary heating means for increasing the temperature of the central portion of the wafer.