Abstract: A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rb1 represents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yb1 represents a divalent linking group containing an ester bond (—C(?O)—O— or —O—C(?O)—), Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).

Abstract: A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 ?m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Abstract: A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 ?m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Abstract: The photosensitive resin composition comprises (a) a ternary copolymer of an ethylenically unsaturated amide, carboxyl-containing monomer and third monomer, (b) an esterified resin by the reaction of an unsaturated carboxylic acid and a novolactype epoxy resin, (c) a photopolymerizable monomer, (d) a photopolymerization initiator and (e) a powder such as a finely divided silica filler. The resist layer formed from the composition is capable of being developed with an alkaline aqueous solution and has excellent heat resistance in addition to other desirable properties when the patterned resist layer by the pattern-wise exposure to ultraviolet light and development is subjected to a heat treatment to effect thermal curing.