Abstract: In the chassis dynamometer apparatus, a pedestal contains a mounting frame on which a load motor is mounted, and a base under the mounting frame. Provided that a longitudinal direction of a vehicle is an x-axis direction and a width direction of the vehicle is a y-axis direction, a first movable mount(s) slidable in one side of the x-axis or y-axis direction, a second movable stand slidable in the other side of the x-axis or y-axis direction, and a spherical joint tiltable and rotatable in an arbitrary direction are connected in series between the mounting frame and the base.

Abstract: A case having a stator fixed to an inside surface of a peripheral wall portion can be inserted into a tire house of a vehicle from an outside o in an axial direction. An inside of a hollow portion of the case can receive, by insertion thereinto, a brake disc and a brake caliper of the vehicle. A rotor includes: a rotor coupling portion that can be coupled to a drive wheel coupling portion of the vehicle; a rotor frame extending outside in a radial direction at an axially outer position than the brake caliper in a state in which the rotor coupling portion is coupled to the drive wheel coupling portion; a rotor circumferential wall portion connected to a radially outside end of the rotor frame, and extending axially inside from a connecting portion with the radially outside end; and a magnet fixed to the rotor circumferential wall portion.

Abstract: A case a-having a stator a-fixed to an inside surface of a peripheral wall portion s-can be inserted into a tire house of a vehicle from an outside o in an axial direction. An inside of a hollow portion of the case can receive, by insertion thereinto, a brake disc and a brake caliper of the vehicle. A rotor includes: a rotor coupling portion that can be coupled to a drive wheel coupling portion of the vehicle; a rotor frame extending outside in a radial direction at an axially outer position than the brake caliper in a state in which the rotor coupling portion is coupled to the drive wheel coupling portion; a rotor circumferential wall portion connected to a radially outside end of the rotor frame, and extending axially inside from a connecting portion with the radially outside end; and a magnet fixed to the rotor circumferential wall portion.

Abstract: A low-cost railway vehicle gear device of parallel cardan drive system is provided in which the vibrations and noises can be reduced only by means of 2-D tooth surface modifications. In a railway vehicle gear device of parallel cardan drive system having a helical pinion (1) and a helical gear wheel (2), a pinion and a gear wheel respectively having gear specifications of module of 4 to 8, pressure angle of 20 to 30°, and helix angle of 15 to 30°, crowning is performed on a gear surface in the flank line direction of the pinion. The tooth surface (11) has a shape of a sinusoidal curve with an apex (11a) being positioned in a central area of the face width direction of the pinion, the sinusoidal curve being expressed by a single sinusoidal function and extending over an entire width in the face width direction of the helical pinion.

Abstract: A low-cost railway vehicle gear device of parallel cardan drive system is provided in which the vibrations and noises can be reduced only by means of 2-D tooth surface modifications. In a railway vehicle gear device of parallel cardan drive system having a helical pinion (1) and a helical gear wheel (2), a pinion and a gear wheel respectively having gear specifications of module of 4 to 8, pressure angle of 20 to 30°, and helix angle of 15 to 30°, crowning is performed on a gear surface in the flank line direction of the pinion. The tooth surface (11) has a shape of a sinusoidal curve with an apex (11a) being positioned in a central area of the face width direction of the pinion, the sinusoidal curve being expressed by a single sinusoidal function and extending over an entire width in the face width direction of the helical pinion.

Abstract: A rotor of an induction starting synchronous motor includes permanent magnets and induction coils having both ends short-circuited in a core. The permanent magnets are arranged side by side in a longitudinal direction of the core to form a plurality of sets of permanent magnets. Two sets of the permanent magnets form respective poles of the induction starting synchronous motor. The two sets of permanent magnets forming each of the poles are located inclined or slightly shifted in a cross-sectional plane of the core by rotating the two sets of permanent magnets about corners of the permanent magnets nearest the induction coils as rotating axes into directions such that magnetic fluxes induced by the two sets of permanent magnets are cancelled each other. With this construction, the induction starting synchronous motor can be smoothly started and operated with improved power factor and efficiency characteristics.

Abstract: A rotor of an induction starting synchronous motor includes permanent magnets and induction coils having both ends short-circuited in a core. The permanent magnets are arranged side by side in a longitudinal direction of the core to form a plurality of sets of permanent magnets. Two sets of the permanent magnets form respective poles of the induction starting synchronous motor. The two sets of permanent magnets forming each of the poles are located inclined or slightly shifted in a cross-sectional plane of the core by rotating the two sets of permanent magnets about corners of the permanent magnets nearest the induction coils as rotating axes into directions such that magnetic fluxes induced by the two sets of permanent magnets are cancelled each other. With this construction, the induction starting synchronous motor can be smoothly started and operated with improved power factor and efficiency characteristics.

Abstract: The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits simultaneous formation of the both region and have high-speed performance and a RC thyristor of a buried-gate or recessed-gate structure which has a high breakdown voltage by the use of a buried-gate or recessed-gate structure, permits simultaneous formation of thyristor and diode regions and high-speed, high current switching performance, and the RC thyristor of the planar-gate structure has a construction which comprises an SI thyristor or miniaturized GTO of a planar-gate structure in the thyristor region and an SI diode of a planar structure in the diode region, the diode region having at its cathode side a Schottky contact between n emitters or diode cathode shorted region and the thyristor region having at its anode side an SI anode shorted structure fo

Abstract: In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed in the second gate. A MOS structure is formed on the second gate as a control gate electrode isolated therefrom. Since the channel integration density is high, the area efficiency increases. The MOS gate structure suppresses the minority carrier (hole) storage effect to permit high-speed swtching of the thyristor, and the shorted cathode structure provides for increased maximum controllable current/voltage durability. The split gate structure can be used in combination with planar, buried, recessed and double gate structures.

Abstract: The present invention is to provide a Static Induction semiconductor device with a Static Induction Schottky shorted structure where the main electrode region is composed of regions of higher and lower impurity densities relative to each other, the main electrode forms an ohmic contact with the higher impurity density region and also forms a Schottky contact with a Static Induction Schottky shorted region of the lower impurity density region surrounded by tile higher impurity density region, and it is excellent in turn-off performance and easy to use, by substantially reducing tile minority carrier storage time, the fall time and the quantity of gate pull-out charges in order that charges may easily be pulled out from the cathode or source electrode as well as from the gate electrode at turn-off.

Abstract: In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate region of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed between the first and second gate regions. A MOS structure is formed on the second gate region as a insulated gate control gate region electrode isolated therefrom. The MOS gate structure suppresses the minority carrier (hole) storage effect to permit high-speed switching of the thyristor, and the shorted cathode structure provides for increased maximum controllable current/voltage durability. The split gate structure can be used in combination with planar, buried, recessed and double gate structures.

Abstract: The present invention is to provide a static induction semiconductor device with a distributed main electrode structure and a static induction semiconductor device with a static induction main electrode shorted structure where the main electrode region is composed of regions of higher and lower impurity densities relative to each other and formed partly in contact with the lower impurity density region as well, and alternatively a static induction short-circuit region opposite in conductivity type to the main electrode region is formed in the lower impurity density region surrounded by the higher impurity density region.

Abstract: The present invention has for its object to provide a planar MOS-controlled thyristor of improved main thyristor turn-ON characteristics and a vertical MOS-controlled thyristor of improved main thyristor turn-ON characteristics and increased integration density. In the planar MOS-controlled thyristor a p-channel MOSFET for turning OFF the main thyristor and an n-channel MOSFET for turning it ON are provided in an integrated form and a channel is provided between the cathode region and a high resistance layer. The current in the channel can be controlled by the base or gate potential through utilization of the J-FET or static induction effect. In the vertical MOS-controlled thyristor a vertical p-channel MOSFET for turning OFF the main thyristor and a vertical n-channel MOSFET for turning it ON are provided in an integrated form and a base layer or channel is provided between the cathode region and a high resistivity layer.

Abstract: A driver circuit for a large capacity switching element like power transistors etc. having an overdrive function. The driver circuit supplies a sharp overdrive current only at the build-up time and the control thereafter is effected by a constant current source so that the current limiting resistor can be saved and the current capacity of the various elements may be decreased.

Abstract: A direct current to direct current converting chopper device comprising essentially two switching elements, two reactors, two diodes and three condensers likewisely with a conventional device but able to maintain rather stable output voltages to avoid higher harmonic noises and able to provide output voltage higher than the input voltage.

Abstract: A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of 10.sub.11 cm.sup.-3 -5.times.10.sup.14 cm.sup.-3 is interposed, and the voltage gain decided by the gate length, gate interval and the gate-to-anode distance is made 10 or more so that the forward voltage drop is small, providing high speed switching ability and a large reverse breakdown voltage.

Abstract: Offset condition detecting device for detecting offset condition of pantographs from overhead contact wires by means of electric current detected by a contact element mounted on the pantograph and insulated therefrom. The detection is made electrically and in case of emergency the pantographs are lowered down at high speed to prevent damage of pantographs of trolley-assisted vehicles.

Abstract: A collector device for trolley-assisted vehicles having a pantograph operating circuit acting to deenergize the pantograph operating electromagnetic valve, when a driver inadvertently intends to leave the vehicle while pantographs are in the working position by automatically bringing the pantographs down to leave overhead contact wire thus to avoid electric shock accident.

Abstract: A static induction thyristor having buried gate region having the concentration distribution of the impurity to have at least one stepwise variation viewed from the surface of the gate for improving dv/dt capability and for allowing more tolerance in the accuracy in the over-etching and also for keeping variation of the gate resistance small. A static induction thyristor having buried gate region and having the high concentration layer given selective junction depth and to make shallow for the location situated above or below the gate region and may be provided with insulating layer between anode or cathode electrode for further improving dv/dt capability and also the gate loss at turn-on in high frequency operation and for improving manufacturing yield.

Abstract: A method for the formation of buried gates in a semiconductor device using epitaxial growing method combined with diffusion method or diffusion by an additional heat treatment. The buried gate has smaller gate resistance by providing relatively high impurity concentration and also having good reverse characteristic by providing relatively low impurity concentration at the top of the buried gates.