Abstract: A method of producing a porous carbon is provided that can change type of functional groups, amount of functional groups, or ratio of functional groups while inhibiting its pore structure from changing. A method of producing a porous carbon includes: a first step of carbonizing a material containing a carbon source and a template source, to prepare a carbonized product; and a second step of immersing the carbonized product into a template removing solution, to remove a template from the carbonized product, and the method is characterized by changing at least two or more of the following conditions: type of the material, ratio of the carbon source and the template source, size of the template, and type of the template removal solution, to thereby control type, amount, or ratio of functional groups that are present in the porous carbon.

Abstract: Provided is a C/C composite having a long life in an environment including a heating process and a cooling process and having less adverse effects on surrounding facilities and the quality of treatment objects. A C/C composite in which, in measurement for open pores by mercury porosimetry, an open porosity for open pores with a radius of not less than 0.4 ?m and less than 10 ?m in the C/C composite is 2.0% or less.

Abstract: A porous carbon that has an extremely high specific surface area while being crystalline, and a method of manufacturing the porous carbon are provided. A porous carbon has mesopores 4 and a carbonaceous wall 3 constituting an outer wall of the mesopores 4, wherein the carbonaceous wall 3 has a portion forming a layered structure. The porous carbon is fabricated by mixing a polyamic acid resin 1 as a carbon precursor with magnesium oxide 2 as template particles; heat-treating the mixture in a nitrogen atmosphere at 1000° C. for 1 hour to cause the polyamic acid resin to undergo heat decomposition; washing the resultant sample with a sulfuric acid solution at a concentration of 1 mol/L to dissolve MgO away; and heat-treating the noncrystalline porous carbon in a nitrogen atmosphere at 2500° C.

Abstract: [Problem] A microorganism immobilized carrier is provided that is easy for microorganisms to adhere to, and is able to reduce the manufacturing cost of the microorganism immobilized carrier and the running cost of an apparatus that uses the microorganism immobilized carrier. [Solution] A microorganism immobilized carrier is characterized by including a carbon component and a resin, having a zeta potential of from ?25 mV to 0 mV, and containing microorganisms adhered to a surface thereof and/or an interior thereof. The microorganisms are preferably nitrifying bacteria. The carbon component preferably has a particle size of from 1 ?m to 1000 ?m.

Abstract: A supported platinum catalyst having a high ratio of a diffraction peak intensity of a Pt (220) plane and having excellent oxidation resistance, obtained by a simple production method without using a polymer. The supported platinum catalyst includes a carbon support and platinum fine particles supported on the carbon support, the platinum fine particles being such that a ratio of a diffraction peak intensity of a (220) plane with respect to a total of diffraction peak intensities of a (111) plane, a (200) plane, and the (220) plane by X-ray diffraction is not less than 0.128.

Abstract: [Problem] A carrier for retaining anammox bacteria, an anammox bacteria-adhered particle, and a wastewater treatment apparatus are provided that can remarkably reduce the start-up period for obtaining a nitrogen removal speed of 1 kg-N/m3/day. [Solution] A carrier for retaining anammox bacteria includes carbon particles. The carbon particles are desirably graphite particles, particularly isotropic graphite particles. The carbon particles desirably have a zeta potential of ?35 mV to 0 mV and an average particle size of 2 ?m to 1000 ?m.

Abstract: A joined material and a method of manufacturing the joined material are provided which enable a metal layer and a carbon material layer to be easily joined to each other while making the thickness of the metal layer larger and which can inhibit failure. A joined material includes a CFC layer (3) and a tungsten layer (4) that are joined to each other. A sintered tungsten carbide layer (5), a mixed layer (6) of SiC and WC, and SiC and WC (7) that have been sintered while intruding into the CFC layer (3), are formed between the CFC layer (3) and the tungsten layer (4), and these layers (3, 4, 5, 6, and 7) are joined to each other by sintering.

Abstract: In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.

Abstract: A method of producing a porous carbon is provided that can change type of functional groups, amount of functional groups, or ratio of functional groups while inhibiting its pore structure from changing. A method of producing a porous carbon includes: a first step of carbonizing a material containing a carbon source and a template source, to prepare a carbonized product; and a second step of immersing the carbonized product into a template removing solution, to remove a template from the carbonized product, and the method is characterized by changing at least two or more of the following conditions: type of the material, ratio of the carbon source and the template source, size of the template, and type of the template removal solution, to thereby control type, amount, or ratio of functional groups that are present in the porous carbon.

Abstract: In a method for manufacturing a device fabrication wafer, an SiC epitaxial wafer that is an SiC wafer 40 having a monocrystalline SiC epitaxial layer formed thereon is subjected to a basal plane dislocation density reduction step of reducing the density of basal plane dislocations existing in the epitaxial layer of the SiC epitaxial wafer, to thereby manufacture the device fabrication wafer for use to fabricate a semiconductor device. In the basal plane dislocation density reduction step, the SiC epitaxial wafer is heated under Si vapor pressure for a predetermined time necessary to reduce the density of basal plane dislocations, without formation of a cap layer on the SiC epitaxial wafer, so that the density of basal plane dislocations is reduced with suppression of surface roughening.

Abstract: Provided is a susceptor which enables improvement in yield of semiconductor chips produced from wafers, has a long life, and hardly causes chipping. The susceptor includes pockets (2) in which wafers (10) are to be placed, wherein at least one of the pockets (2) includes a plurality of supporting portions (3) for supporting the wafer (10), a plurality of contact portions (4) to make contact with a lateral surface (10a) of the wafer (10), and a plurality of non-contact portions (5) spaced from the lateral surface (10a) of the wafer (10). The contact portions (4) and the non-contact portions (5) are alternately provided in the inner peripheral wall of the pocket (2), and at least two of the supporting portions (3) are provided on lines extending from a center (O) of the pocket (2) to the non-contact portions (5) when the susceptor is viewed from above.

Abstract: In a method for manufacturing an SiC wafer, a work-affected layer removal step of removing a work-affected layer generated in a surface and inside of an SiC wafer is performed, so that the SiC wafer from which the work-affected layer is at least partially removed is manufactured. In the work-affected layer removal step, the SiC wafer having undergone a polishing step is etched with an etching amount of 10 ?m or less by being heated under Si vapor pressure so that the work-affected layer is removed. In the polishing step, an oxidizer is used to produce a reaction product in the SiC wafer while abrasive grains are used to remove the reaction product. In the SiC wafer having undergone the polishing step, an internal stress caused by the work-affected layer is present at a location inner than the work-affected layer, and an internal stress of the SiC wafer is reduced by removing the work-affected layer in the work-affected layer removal step.

Abstract: An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method. The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

Abstract: A susceptor is a component for placing a SiC substrate in forming an epitaxial layer on a main surface of the SiC substrate. In this susceptor, a support surface and a recess are formed. The support surface is formed on lower position than an upper surface of the susceptor and supports an outer circumferential of the rear face of the SiC substrate. The recess is formed in the inside of the diametrical direction than the support surface, and at least the surface is made of a tantalum carbide, the depth of that is not in contact with the rear face of the Sic substrate in forming the epitaxial layer.

Abstract: A heat treatment furnace jig having a box-like frame including a rim part and a bottom part, the bottom part being removable from the rim part, and a removable net of woven strands disposed in the box-like frame and supported from below by the bottom part. The net has a triaxial weave of strands, each strand having a bundle of carbon fibers that are aligned without twisting, wherein, among the woven strands, strands of at least one direction are held by two strands in another direction, and the net is impregnated with a matrix material.

Abstract: The present invention improves the strength of the bottom (net) of the jig and makes it more difficult and unlikely for deviation of the mesh to occur. A workpiece is loaded on the net (2) of the heat treat furnace jig (hereinafter, heat treatment furnace jig). In the net (2), a first strand (10), a second strand (20) and a third strand (30) are in contact at a contact point (X1). Near the contact point (X1), the second strand (20) overlaps the first strand (10) from above and the third strand (30) overlaps the first strand (10) from below. As a result, the first strand (10) is held between the second strand (20) and the third strand (30) in the up/down directions.

Abstract: Provided are a carbon powder which can provide a catalyst exhibiting high performance and a catalyst. A carbon powder for fuel cell comprising carbon as a main component, which has a ratio (B/A) of an area B of peak 1 to an area A of peak 0 of more than 0 and 0.15 or less, wherein the area A represents an area of peak 0 at a position of 2?=22.5° to 25° as observed by XRD analysis when the carbon powder for fuel cell is subjected to heat treatment at 1800° C. for 1 hour in an inert atmosphere, and the area B represents an area of peak 1 at a position of 2?=26° as observed by XRD analysis when the carbon powder for fuel cell is subjected to heat treatment at 1800° C. for 1 hour in an inert atmosphere.

Abstract: Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.

Abstract: A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).