Abstract: A method of producing a diffraction grating of borosilicate glass or barium borosilicate glass, the method comprising the steps of forming a grating on a surface of a silicon wafer the grating through the Bosch process; forming an oxide film on a surface of the grating by heating and exposure to water vapor of the silicon wafer; removing the oxide film using hydrofluoric acid; making the surface provided with the grating of the silicon wafer and a surface of a glass plate undergo anodic bonding; heating the silicon wafer and the glass plate bonded to each other; polishing a surface opposite to the boded surface of the silicon wafer and a surface opposite to the boded surface of the glass plate; and removing silicon from the glass plate by selective etching using xenon difluoride.

Abstract: A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

Abstract: An amplification fiber which can generate a laser beam in a visible region even when a silica glass is used as a base material of a core of the amplification fiber is realized. An amplification fiber according to an embodiment of the present disclosure includes a core configured to generate a laser beam from an excitation beam in a visible region, and a cladding surrounding the core. The core is composed of a core material including Dy, one or more elements selected from Al, Ge, and P, and a silica glass.

Abstract: A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

Abstract: A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.

Abstract: A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by Ax-cBy with value of x being smaller by c with respect to a compound AxBy according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

Abstract: A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.

Abstract: A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.

Abstract: A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by Ax-cBy with value of x being smaller by c with respect to a compound AxBy according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

Abstract: Provided is a film for application to a 3D sample, the film including a photoresist layer that has alignment or direction marks thereon. After the fine pattern of the photoresist layer or coat is exposed, the photoresist layer is applied to a desired position of the 3D sample by aligning the alignment or direction marks of the film with alignment or direction marks on the 3D sample. This allows for transfer of an appropriate fine pattern. Part or all of the thickness or area of the photoresist layer is developed to form projections or depressions in the photoresist layer before the film is applied to the 3D sample.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2-x?xS, where ? is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex. The value of x is not smaller than 0.2 and not greater than 0.95.

Abstract: A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.

Abstract: A first fiber is connected to a first end of a third fiber doped with a rare earth element, and a second fiber is connected to a second end of the third fiber. In the third fiber doped with the rare earth element, a central portion of a core is more heavily doped with the rare earth element than a peripheral portion of the core is.

Abstract: Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.

Abstract: A system includes a plurality of control devices that respectively control the states of a plurality of apparatuses and are connected to each other via communication lines. When each of the control devices determines a state target value of its own apparatus using the current state indicator value of the own apparatus, and the distributed controller input which is a function of the state indicator value of an apparatus adjacent to the own apparatus and the state indicator value of the own apparatus, the control gain which adjusts contribution of the distributed controller input to the state target value is determined based on a communication delay time between the control devices.

Abstract: A distributed control system includes a plurality of control units that controls respective units of a plurality of devices, and a communication network that includes a communication line that connects the control units. A control unit of each of the devices is configured to determine a state target value, according to consensus control of a multi-agent system, by using a current state index value of a self-device, and a difference between a latest state index value of an adjacent device received from a control unit of the adjacent device, and a latest state index value of the self-device received from the control unit of the adjacent device.