Abstract: A method of minimizing the size of primary Si in Al—Si alloy which includes a step of adding P to molten Al—Si alloy, a step of contacting a metal substrate plated with Zn or a copper substrate, and a step of removing the substrate from the molten Al—Si alloy.
Type:
Grant
Filed:
March 5, 2002
Date of Patent:
April 29, 2003
Assignees:
Tozuka-Tendo Co., Ltd, Metal Science Ltd.
Abstract: A method of minimizing the size of primary Si in Al—Si alloy which comprises of a step of adding P to molten Al—Si alloy, a step of contacting a metal substrate plated with Zn or a copper substrate, and a step of removing the substrate from the molten Al—Si alloy.