Patents Assigned to Translucent Photonics, Inc.
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Publication number: 20090236595Abstract: The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations.Type: ApplicationFiled: October 16, 2007Publication date: September 24, 2009Applicant: TRANSLUCENT PHOTONICS, INC.Inventor: Petar B. Atanackovic
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Publication number: 20090038669Abstract: The present invention teaches a device for converting solar radiation to electrical energy comprising a thin film, single crystal device chosen from a variety of semiconductor materials, optionally, employing an alternative substrate, and various combinations of p-n, p-i-n and avalanche p-i-n diodes to enable high conversion efficiency photo-voltaic devices.Type: ApplicationFiled: September 20, 2007Publication date: February 12, 2009Applicant: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Publication number: 20090001329Abstract: Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)β(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.Type: ApplicationFiled: February 11, 2008Publication date: January 1, 2009Applicant: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Publication number: 20080308143Abstract: The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and/or ceramic and/or glass substrates. Crystalline or polycrystalline thin film semiconductor-on-glass formation using alkali ion impurity barrier layer(s) are disclosed. Example embodiment of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) is disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film.Type: ApplicationFiled: May 12, 2008Publication date: December 18, 2008Applicant: Translucent Photonics, Inc.Inventor: Petar Atanackovic
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Publication number: 20080295879Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.Type: ApplicationFiled: July 26, 2007Publication date: December 4, 2008Applicant: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Publication number: 20080286949Abstract: Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.Type: ApplicationFiled: April 29, 2008Publication date: November 20, 2008Applicant: TRANSLUCENT PHOTONICS, INC.Inventor: Petar Atanackovic
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Publication number: 20080217695Abstract: A substrate comprising a first region of a first semiconductor and a second region of second semiconductor, wherein the first semiconductor and the second semiconductor are different, is disclosed. The substrate is particularly supportive of p-channel MOSFETs and n-channel MOSFETs having carrier mobility that is closer than in substrates comprising a single semiconductor.Type: ApplicationFiled: March 5, 2007Publication date: September 11, 2008Applicant: TRANSLUCENT PHOTONICS, INC.Inventor: Petar Atanackovic
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Patent number: 7384481Abstract: Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.Type: GrantFiled: October 19, 2005Date of Patent: June 10, 2008Assignee: Translucent Photonics, Inc.Inventor: Petar Atanackovic
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Publication number: 20080111195Abstract: A planar, double-gate transistor structure comprising upper and lower gate stacks that each comprises a single-phase high-K dielectric gate dielectric is disclosed. The transistor structure is particularly suitable for fully-depleted silicon-on-insulator electronics having gate-lengths less than 65 nm.Type: ApplicationFiled: November 14, 2006Publication date: May 15, 2008Applicant: TRANSLUCENT PHOTONICS, INC.Inventor: Petar Atanackovic
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Publication number: 20080111186Abstract: A transistor structure comprising a single-crystal gate conductor disposed on a single-phase high-K dielectric gate dielectric is disclosed. The transistor structure is particularly suitable for fully-depleted silicon-on-insulator electronics.Type: ApplicationFiled: November 14, 2006Publication date: May 15, 2008Applicant: TRANSLUCENT PHOTONICS, INC.Inventor: Petar Atanackovic
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Publication number: 20080078444Abstract: Optimal structures for high efficiency thin film silicon solar energy conversion devices and systems are disclosed. Thin film silicon active layer photoelectron conversion structures using ion implantation are disclosed. Thin film semiconductor devices optimized for exploiting the high energy and ultraviolet portion of the solar spectrum at the earths surface are also disclosed. Solar cell fabrication using high oxygen concentration single crystal silicon substrates formed using in preference the CZ method are used advantageously. Furthermore, the present invention discloses optical coatings for advantageous coupling of solar radiation into thin film solar cell devices via the use of rare-earth metal oxide (REOx), rare-earth metal oxynitride (REOxNy) and rare-earth metal oxy-phosphide (REOxPy) glasses and or crystalline material. The rare-earth metal is chosen from the group commonly known in the periodic table of elements as the lanthanide series.Type: ApplicationFiled: April 18, 2007Publication date: April 3, 2008Applicant: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Patent number: 7351993Abstract: Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)-(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.Type: GrantFiled: December 28, 2004Date of Patent: April 1, 2008Assignee: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Patent number: 7273657Abstract: Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula REβ(O, N, P)β(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.Type: GrantFiled: December 28, 2004Date of Patent: September 25, 2007Assignee: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Patent number: 7211821Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.Type: GrantFiled: April 16, 2004Date of Patent: May 1, 2007Assignee: Translucent Photonics, Inc.Inventors: Petar B. Atanackovic, Larry R. Marshall
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Patent number: 7199015Abstract: Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)β(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.Type: GrantFiled: December 28, 2004Date of Patent: April 3, 2007Assignee: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Patent number: 7135699Abstract: Structure and method for growing crystalline superlattice rare earth oxides, rare earth nitrides and rare earth phosphides and ternary rare-earth compounds are disclosed. The structure includes a superlattice having a plurality of layers that forming a plurality of repeating units. At least one the layers in the repeating unit is an active layer with at least one species of rare earth ion.Type: GrantFiled: December 23, 2003Date of Patent: November 14, 2006Assignee: Translucent Photonics, Inc.Inventor: Petar B. Atanackovic
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Patent number: 6858864Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.Type: GrantFiled: April 16, 2004Date of Patent: February 22, 2005Assignee: Translucent Photonics, Inc.Inventors: Petar B. Atanackovic, Larry R. Marshall
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Patent number: 6734453Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.Type: GrantFiled: August 7, 2001Date of Patent: May 11, 2004Assignee: Translucent Photonics, Inc.Inventors: Petar B. Atanackovic, Larry R. Marshall