Patents Assigned to Tri-N CO., LTD.
  • Patent number: 11521889
    Abstract: The present invention relates to a conductive porous ceramic substrate and a method of manufacturing the same, and more particularly to a conductive porous ceramic substrate, in which a porous ceramic substrate used as a chuck or stage for fixing a thin semiconductor wafer substrate or display substrate through vacuum adsorption is imparted with antistatic performance so as to prevent the generation of static electricity, and a method of manufacturing the same.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: December 6, 2022
    Assignees: MAX TECH CO., LTD., Tri-N CO., LTD.
    Inventors: Byoung Hak Kim, Seung Woo Baik, June Beom Choi, In Woong Kim, Jong Yeol Jung, Chun Moo Lee, Gyu Ha Kim, In Bum Shin