Abstract: Disclosed herein are devices, systems, and methods for improved demodulation. In one embodiment, a demodulator includes an input port configured to receive an analog input signal having a first frequency spectrum, a delta-sigma modulator electrically coupled with the input port, a digital downconverter electrically coupled with the delta-sigma modulator, and a filter electrically coupled with the digital downconverter. The filter is configured for a passband having a second frequency spectrum. The demodulator also includes an output port electrically coupled with the filter. The output port is configured to provide an output signal having the second frequency spectrum.

Abstract: A semiconductor device having a plurality of layers and a plurality of circuit elements arranged in tiles. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections of the plurality of circuit elements. The semiconductor device may include an interconnection quilt having a plurality of metal layers disposed to interconnect the plurality of circuit elements. The plurality of circuit elements may be analog circuit element and/or digital circuit elements. The tiles may be analog tiles and digital tiles that form a mixed signal structured array.

Abstract: A semiconductor device having a plurality of layers and a plurality of circuit elements arranged in tiles. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections of the plurality of circuit elements. The semiconductor device may include an interconnection quilt having a plurality of metal layers disposed to interconnect the plurality of circuit elements. The plurality of circuit elements may be analog circuit element and/or digital circuit elements. The tiles may be analog tiles and digital tiles that form a mixed signal structured array.

Abstract: A semiconductor device having a plurality of layers and a capacitor array that includes a plurality of individual capacitors. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections and capacitances of the plurality of individual capacitors in the capacitor array. The semiconductor device may include a metal structure disposed within the device to provide an electromagnetic shield for at least one of the plurality of individual capacitors in the capacitor array.

Abstract: A semiconductor device having a plurality of layers and a plurality of circuit elements arranged in tiles. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections of the plurality of circuit elements. The semiconductor device may include an interconnection quilt having a plurality of metal layers disposed to interconnect the plurality of circuit elements. The plurality of circuit elements may be analog circuit element and/or digital circuit elements. The tiles may be analog tiles and digital tiles that form a mixed signal structured array.

Abstract: A semiconductor device having a plurality of layers and a plurality of circuit elements arranged in tiles. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections of the plurality of circuit elements. The semiconductor device may include an interconnection quilt having a plurality of metal layers disposed to interconnect the plurality of circuit elements. The plurality of circuit elements may be analog circuit element and/or digital circuit elements. The tiles may be analog tiles and digital tiles that form a mixed signal structured array.

Abstract: A semiconductor device having a plurality of layers and a capacitor array that includes a plurality of individual capacitors. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections and capacitances of the plurality of individual capacitors in the capacitor array. The semiconductor device may include a metal structure disposed within the device to provide an electromagnetic shield for at least one of the plurality of individual capacitors in the capacitor array.

Abstract: A semiconductor device having a plurality of layers and a capacitor array that includes a plurality of individual capacitors. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections and capacitances of the plurality of individual capacitors in the capacitor array. The semiconductor device may include a metal structure disposed within the device to provide an electromagnetic shield for at least one of the plurality of individual capacitors in the capacitor array.