Abstract: A silicon-containing polymer is deposited in a recess on the surface of the substrate. The substrate is then heated to a given temperature. The surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, is subjected to gas or vapor activated by a plasma or other electromagnetic radiation which is distinct from a source of heat used to heat the substrate to the given temperature.

Abstract: A seal is formed between two parts of a high pressured chamber by means of a rigid ring, which is formed with curved surfaces, that engage with an anvil and an enclosure part, the anvil having a similar curved projection. At least one of the engaging surfaces is coated with a soft metal e.g. silver.

Abstract: An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.

Abstract: Radial cluster tools, for example, include a central load/unload station and processing chambers for processing workpieces, such as semiconductor wafers. The processing chambers are arranged about the central load/unload station in abutting pairs to leave substantial maintenance spaces.

Abstract: The invention relates to a process for filling a multiplicity of recesses (3) formed in an exposed surface of a workpiece (1), wherein the mouths of the recesses (3) are closed by the deposition of a layer (10) and the layer is subjected to elevated temperature and pressure to force material from the layer down into the recesses. In the particular embodiments described, the elevated temperature is achieved by supplying very short thermal pulses, for example, from a light source such as a laser or a halogen light and preferably this thermal pulse is applied after the elevated pressure has been achieved.

Abstract: A seal is formed between two parts of a high pressured chamber by means of a rigid ring (13), which is formed with curved surfaces (17), that engage with an anvil (14) and an enclosure part (10), the anvil (14) having a similar curved projection (18). At least one of the engaging surfaces is coated with a soft metal e.g. silver.

Abstract: An electrostatic chuck 12 for a plasma reactor apparatus 10 comprises a base metallic section 23, a pair of electrodes 24 set in bonding material 27 and electrically insulated from the base by a plate 29 and a thick dielectric layer 20 (e.g. 0.5 to 1.5 mm), which covers the electrodes 24 and bonding material 27 and forms the support surfaces for wafers 31.

Abstract: A liquid short-chain polymer of the general formula RaSi(OH)b or (R)aSiHb(OH)c is deposited on a substrate, where a+b=4 or a+b+c=4, respectively, a, b and c are integers, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis. The short-chain polymer is then subjected to further polymerization to form an amorphous structure of the general formula (RxSiOy)n, where x and y are integers, x+y=4, x≠0, n equals 1 to ∞, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis.

Abstract: A Platen, generally indicated at (10), comprises a ceramic body (11) and a workpiece support surface (12) and a base (13). Embodied within the body (11) are an electrostatic chuck electrode (40), an RF electrode (15), a heater (16), a ground plane electrode (17), an embedded thermocouple (18), and a stainless steel support (19). This combination provides a platen which can be RF driven, but has a screen to prevent unwanted plasma beneath the platen. The chuck can also be utilized as an electrostatic chuck.

Abstract: This invention relates to methods of forming a barrier layer including depositing a layer of Titanium Nitride and subsequently nitriding the surface of that layer. In some embodiments the Titanium Nitride layer is exposed to Oxygen prior to the nitroding step.

Abstract: The invention consists in a method of filling recesses in a surface layer of a workpiece with conductive material including the steps of: forming a barrier layer on the surface; depositing a layer of conductive material on to the barrier layer; and forcing, flowing or drifting the conductive material into the recesses characterized in that the barrier layer includes Oxygen or is oxidized and oxidized material in the surface of the layer is nitrided prior to the deposition of the conductive material.

Abstract: This invention relates to showerheads for delivering gases to reactor chambers. The showerhead 18 comprises a casing 19, which includes a backing plate 20, first and second baffle plates 21, 22 and an outlet plate 23. Baffle plates 21 and 22 divide the volume defined by the casing 19 into plena 24, 25 and 26. A gas supply 27 feeds the plenum 24, a gas supply 28 feeds the plenum 25 and a further gas supply 29 feeds the plenum 26. The outlet plate 23 has an array of openings 30 and each of the baffle plates 21, 22 has a tube for each opening 31. The tubes and outlets together define concentric but separate outlets for the respective plena.

Abstract: In a method of treating a semi-conductor wafer a short-chain polymer is deposited on the wafer to planarise surface features on the wafer and a diffusion layer is deposited on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.