Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.

Abstract: A of forming an acoustic resonator of one inventive aspect includes depositing at least one primer layer, depositing an electrode layer containing Molybdenum on the upper surface of the primer layer, and depositing a layer may piezoelectric material on the uppermost electrode layer. The primer layer may included a generally crystalline material, the upper surface of which has an atomic spacing that matches the atomic spacing of the electrode layer to within about 15% and is not of cubic crystalline form.

Abstract: A low k porous dielectric film is described wherein the exposed surface or surfaces of the film are substantially non-porous. A densification method is described for treating such exposed surfaces to render porous surfaces non-porous.

Abstract: This invention relates to a shutter for use in physical vapour deposition apparatus having a chamber. The shutter, generally indicated at 5, is located in a side housing 6 of the vacuum chamber 7, whilst sputtering is taking place. Once the substrate 2 is treated, the substrate is removed from the chamber and the shutter is brought in to an operative position above a wafer pedestal or support 1. The shutter is mounted on an arm 8 using a fixing boss 10, the arm and the boss being magnetically coupled.

Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.

Abstract: A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/?Ta, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.

Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.

Abstract: A sputter apparatus (10) includes a chamber (13a) housing a target (11), a work piece support (12) and a process area (14) between the target and the support. The apparatus further includes an inlet (24) for process gas and a pumping outlet (27) from the process area. The inlet substantially surrounds the support and the apparatus includes a pumping outlet separate from the inlet. The inlet is shielded from the process area.

Abstract: A workpiece is processed which includes a multiplicity of recesses formed in the exposed surface. The invention includes depositing a first barrier layer 13 of for example, titanium nitride, a second layer 11 of aluminium alloy and a third relatively thin layer 12 of titanium nitride and then exposing the sandwich of layers to elevated heat and pressure so that the second layer is deformed to fill the recesses 10.

Abstract: A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic fluid polymer on the wafer, which thus forms a generally planar layer.

Abstract: To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. The layer may be deposited by sputtering, etc, or the layer may be deposited as a pre-formed foil. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

Abstract: A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.

Abstract: A wafer processing method relates to treating a semi-conductor wafer and in particular, but not exclusively, to planarization. The method consists of depositing a liquid short-chain polymer formed from a silicon containing gas or vapor. Subsequently water and OH are removed and the layer is stabilised.

Abstract: The invention relates to apparatus for use in a process in which a layer is formed on a surface of a workpiece and then forced into underlying voids. The apparatus for applying elevated pressure to the workpiece 1 comprises a chamber 103 (which includes a workpiece support 109a) means 108 for flooding the chamber 103 with liquid to immerse a workpiece 1 on the support 109a and means for applying a pulse of elevated pressure to the liquid and hence the workpiece. These means may include a liquid reservoir 102, which shares a common flexible wall 101 with the chamber 103, and electrodes 100 and 104 to which a high voltage pulse can be supplied to create a shock in the liquid of reservoir 102 which is transmitted to the liquid in 103 via the wall 101.