Abstract: A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.

Abstract: A solar cell module includes an upper substrate, a lower substrate opposite the upper substrate, a solar cell panel positioned between the upper substrate and the lower substrate, the solar cell panel including a plurality of solar cells which are arranged in a matrix form and are connected to one another through a wiring member, a passivation layer configured to package the solar cell panel, a frame configured to surround an outer perimeter of the solar cell panel, a connection terminal configured to connect two adjacent strings in the solar cell panel, and a cover member configured to cover the connection terminal.

Abstract: The present disclosure relates to the field of solar cell technologies. The present disclosure provides a solar cell and a manufacturing method therefor, a photovoltaic module, and a photovoltaic system. The solar cell includes: a substrate; a tunnel oxide layer stacked on a surface of the substrate, the tunnel oxide layer being an oxide layer including at least a silicon element and an oxygen element; and a polysilicon doped conductive layer stacked on a side of the tunnel oxide layer facing away from the substrate. The tunnel oxide layer is doped with a carbon element and a hydrogen element.

Abstract: The present disclosure relates to a solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a semiconductor substrate, passivating contact structures, a dielectric layer, and first electrodes. The semiconductor substrate includes a first surface and a second surface opposite to each other. The semiconductor substrate includes passivation regions and passivated contact regions, which are alternately arranged along a first direction. The first direction is perpendicular to a thickness direction of the semiconductor substrate. The passivating contact structures are disposed on the second surface and correspondingly disposed on the passivated contact regions. Each passivating contact structure includes an electrically conductive passivation layer. The dielectric layer at least covers the second surface in the passivation regions. The first electrodes are disposed on the passivating contact structures at a side away from the semiconductor substrate.

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Abstract: The present disclosure relates to a solar cell, a sliced cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conductive layer, a third passivation film layer, and a second dielectric layer; the doped conductive layer and the second dielectric layer being sequentially stacked on a first surface of the substrate; the third passivation film layer being stacked on a second surface of the substrate; and the first surface and the second surface of the substrate being arranged opposite to each other; wherein the substrate further includes a plurality of first side surfaces adjacent between the first surface and the second surface; and the third passivation film layer further covers at least part of surfaces of the plurality of first side surfaces. The solar cell, the photovoltaic module, and the photovoltaic system in the present disclosure can reduce recombination losses at side edges of the solar cell and improve efficiency.

Abstract: A solar cell module includes an upper substrate, a lower substrate opposite the upper substrate, a solar cell panel positioned between the upper substrate and the lower substrate, the solar cell panel including a plurality of solar cells which are arranged in a matrix form and are connected to one another through a wiring member, a passivation layer configured to package the solar cell panel, a frame configured to surround an outer perimeter of the solar cell panel, a connection terminal configured to connect two adjacent strings in the solar cell panel, and a cover member configured to cover the connection terminal.

Abstract: A tracker tracking method and system, a photovoltaic device, and a medium are provided. The tracker tracking method comprises: acquiring irradiation data of respective target photovoltaic modules; acquiring initial tracking angles of the respective get photovoltaic modules, adjusting tracking angles of the target photovoltaic modules and calculating total power generation amounts of the target photovoltaic modules corresponding to different adjustment modes for the tracking angles according to the irradiation data and the initial tracking angles; and determining target adjustment modes for the tracking angles of the target photovoltaic modules based on the total power generation amounts of the target photovoltaic modules.

Abstract: A solar cell is provided. The solar cell includes a semiconductor substrate. The front surface of the semiconductor substrate has a metal contact area and a non-metal contact area. A first tunneling layer, a first doped polysilicon layer and a first metal electrode are sequentially stacked on the metal contact area. The first metal electrode is electrically connected to the first doped polysilicon layer. A second tunneling layer, a second doped polysilicon layer and a second metal electrode are sequentially stacked on the back surface of the semiconductor substrate.

Abstract: A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer sequentially arranged on the back surface of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer, a third dielectric layer and a fourth dielectric layer on the first dielectric layer.

Abstract: The present application relates a solar cell, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a first passivation layer, and a second passivation layer. The substrate includes a first surface and a second surface opposite to each other along a thickness direction of the substrate. The first passivation layer is disposed on the first surface of the substrate. The second passivation layer is disposed on a side of the first passivation layer away from the substrate. A material of the first passivation layer is the same as that of the second passivation layer. An atomic packing density of the first passivation layer is higher than that of the second passivation layer. An average thickness of the first passivation layer is smaller than that of the second passivation layer.

Abstract: A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Abstract: The present application provides a large-area perovskite layer and a preparation method thereof. The preparation method includes: dissolving raw materials of a perovskite in an ionic liquid or in a mixture of the ionic liquid and an organic solvent, thereby forming a perovskite precursor, and coating the perovskite precursor onto a surface of a crystalline silicon bottom cell, thereby forming the perovskite layer.

Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Abstract: A method for preparing a solar cell is provided. The method includes providing a N-type silicon substrate; depositing a tunnel passivation structure on the first surface of the N-type silicon substrate, and then depositing a mask layer on the tunnel passivation structure; cleaning the second surface of the N-type silicon substrate; performing boron diffusion treatment on the cleaned second surface of the N-type silicon substrate and annealing treatment on the tunnel passivation structure in the same environment, so that a first emitter layer is formed on the second surface of the N-type silicon substrate and the tunnel passivation structure is crystallized; performing laser patterning treatment on the first emitter layer to form a second emitter region; depositing a passivation and anti-reflection film; and forming a first electrode and a second electrode.

Abstract: The present application provides a film preparation method, a solar cell, a photovoltaic device, and a photovoltaic system. The film preparation method includes forming a first passivation layer on a first surface of a substrate by using a first preparation technique; and forming a second passivation layer on a surface of the first passivation layer away from the substrate by using a second preparation technique, a material of the second passivation layer is the same as that of the first passivation layer; wherein a passivation layer forming speed of the first preparation technique is lower than that of the second preparation technique, and a passivation effect of the first passivation layer is better than that of the second passivation layer.

Abstract: The present application provides an emitter, a selective emitter cell preparation method and a selective emitter cell. The preparation method for the selective emitter cell comprises: sequentially irradiating a boron-rich layer using lasers of at least two different wavelengths, and sequentially doping boron atoms in the boron-rich layer to the same region of a silicon wafer by means of a laser, to obtain the emitter.

Abstract: A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

Abstract: A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.