Abstract: The present disclosure discloses a continuous string welding device for photovoltaic cells and a welding method. The device includes a power transmission mechanism and a welding light box. The power transmission mechanism includes a welding strip positioning section, a buffering section and a welding section that perform conveying independently from each other in sequence in the conveying direction. The buffering section is capable of storing at least one string of cells. The welding light box is located in the welding section. The welding strip positioning section performs step-by-step motion conveying. The welding section performs continuous motion conveying. The buffering section is configured to receive a predetermined number of cells from the welding strip positioning section, connect the predetermined number of cells in series, and then convey the predetermined number of cells connected in series to the welding section.

Abstract: The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting layer is provided. A doped conducting layer is disposed at least on the first surface and the portion of the first side surface, thereby covering the textured structure. A passivating contact layer is formed on the second surface of the substrate. A first passivation layer is formed on the doped conducting layer. The first passivation layer covers the first surface and at least the portion of the first side surface, thereby covering at least the doped conducting layer. A second passivation layer is formed on the passivating contact layer. The second passivation layer covers the second surface, thereby covering the passivating contact layer.

Abstract: The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting material layer is provided. A first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting material layer covers the textured structure. A passivating contact material layer is formed on each surface of the wafer. The wafer formed with the passivating contact material layer is cut along the thickness direction of the substrate to form a sub-wafer, so as to form a doped conducting layer. The passivating contact material layer is etched to form a passivating contact layer. A first passivation layer is formed on the doped conducting layer, and further covers at least a portion of a cut edge side surface which is a side surface of the sub-wafer formed by cutting the wafer.

Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Abstract: The present disclosure relates to a solar battery including a first cell, and a second cell, and a first charge transport layer, a transparent conductive layer, a second charge transport layer and a polysilicon layer are disposed between the first photoelectric conversion layer of the first cell and the second photoelectric conversion layer of the second cell, and the second charge transport layer is disposed between the polysilicon layer and the transparent conductive layer, and the charge transport property of the second charge transport layer is the same as that of the polysilicon layer. In the solar battery of the present disclosure, a first charge transport layer, a transparent conductive layer, a second charge transport layer and a polysilicon layer are sequentially arranged between the first photoelectric conversion layer and the second photoelectric conversion layer.

Abstract: The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.

Abstract: The application provides a solar cell, a manufacturing method, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, an anti-reflection layer, a passivation contact layer, and a second passivation layer. The substrate includes opposite first and second surfaces, and side surfaces between the first and second surfaces. The doped conducting layer and the first passivation layer are sequentially stacked on the first surface. The anti-reflection layer is stacked on the first passivation layer and covers the first surface to cover the first passivation layer. The passivation contact layer is stacked on the second surface. The second passivation layer is stacked on the passivation contact layer and covers the second surface to cover the passivation contact layer. The anti-reflection layer or the second passivation layer covers at least part of at least one side surface of the substrate.

Abstract: The present disclosure provides a solar cell including a substrate, a first emitter, a second emitter, an insulating spacing structure, a first electrode, and a second electrode. The substrate includes a front surface and a back surface opposite to each other. The first emitter and the second emitter are disposed on the back surface of the substrate. The first electrode is disposed on a side of the first emitter away from the substrate, and the first electrode is electrically connected to the first emitter. The second electrode is disposed on a side of the second emitter away from the substrate, and the second electrode is electrically connected to the second emitter. The insulating spacing structure is disposed between the first emitter and the second emitter, and the first emitter and the second emitter are spaced from each other by the insulating spacing structure.

Abstract: Disclosed are a back-surface bridge type contact electrode of a crystalline silicon solar battery and a preparation method therefor. The back-surface bridge type contact electrode of a crystalline silicon solar battery includes a local electrode connected to a local back surface field and a back surface electrode which is covered with a back surface passivation film on a contact surface with a silicon wafer substrate, at least one bridge electrode is provided between the local electrode and the back surface electrode, the contact surface of the bridge electrode and the silicon wafer substrate is also covered with the back surface passivation film, the local electrode is connected to the back surface electrode via the bridge electrode, and the back surface passivation film is also provided, besides at the connection region of the bridge electrode, between the local electrode and the back surface electrode.

Abstract: A method and apparatus for detecting crystal orientation of a silicon wafer is proposed. The detection method uses a camera shooting device to irradiate the silicon wafer in a rotation manner in different angular directions and obtains the corresponding reflection intensities, based on which a reflection curve is drawn for a grain of interest in a polar coordinate system; normal directions of three or more faces of a regular octahedron of a grain <111> are determined by identifying a pixel brightness extreme value in the reflection curve, and then all normal vectors of the regular octahedron are calculated, so that a crystal orientation of the grain of interest may be calculated. The camera shooting device has a light source and one or more camera shooting probes.