Abstract: An uncooled, through-hole configured laser module adapted to receive and transmit RF signals to a laser at bandwidths from direct current (DC) to about ten gigahertz. The laser module incorporates an option for two pin-out configurations. One pin-out configuration has one ground pin and one signal pin for operation at about one gigabit/second or one gigahertz. The second high performance pin-out uses two ground pins and one signal pin for operation up to about ten gigabit/second or ten gigahertz.

Abstract: A barrier layer is formed within a microfabricated device, such as a semiconductor laser assembly. The barrier layer is used to separate bonding material from an underlying layer that is located beneath the barrier layer. The barrier layer includes at least three thin layers that have alternating levels of electronegativity. Therefore, a significant amount of intermetallics are formed between the thin layers, thereby creating strong bonds between the thin layers at relatively low temperatures. It is difficult for the bonding material to break the strong bonds of the thin layers, and the bonding material is, therefore, prevented from penetrating the barrier layer and reacting with the underlying layer.

Abstract: A method for bonding an oxide-containing member to an aluminum surface, includes the steps of: providing a substrate, wherein a portion of a surface of the substrate has aluminum thereon; positioning an oxide-containing member on the aluminum surface of the substrate; and bonding the oxide-containing member to the aluminum surface by pressing the oxide-containing member against the aluminum surface while simultaneously heating the interface between the oxide-containing member and the aluminum surface. The interface between the oxide-containing member and the aluminum surface is heated with a laser.

Abstract: The present invention is directed to a large area single-mode (LASM) laser system that provides a laser having a wider gain region and thus a higher power output without introducing the second transverse mode into the optical signal. The laser system of the present invention also reduces the laser junction temperature, thereby improving the reliability of the laser and of laser systems constructed therefrom. The present invention also provides a stabilized spectrum in an optical signal by providing a means for feeding back from an external fiber grating to the laser only a single mode and a selective spectrum of an optical signal generated by the laser.

Abstract: A broadband partial reflector is located downstream from an optical combiner device. The partial reflector reflects a portion of the combined light back through the combiner device and back into the respective optical pump sources. There are no fiber gratings or other filters between the sources and the combiner device. Consequently, the sources are locked and/or stabilized according to the acceptance bandpass characteristics of the input ports of the combiner device. Since no gratings or other filters need to be located between the sources and the combiner device, the problem of insertion power loss due to spectral mismatch at the input ports can be avoided. In other words, self-aligned wavelength feedback stabilization is accomplished by reflecting a portion of the combined light signal back through the input ports of the combiner device.

Abstract: The invention is an optical apparatus and method of fabrication wherein an optical device such as a semiconductor laser includes a grating and a waveguide optically coupled to the grating. At least a portion of the waveguide coupled to the grating has a width which varies along the length of the waveguide in such a manner as to broaden the spectral line width of light output from the device. The width can be varied according to linear, sinusoidal or saw-tooth functions. A broadened line width permits pumping of a Raman amplifier at a high power without inducing any significant Brillouin Scattering.

Abstract: An array of VCSEL devices and a process for fabricating the VCSEL array is disclosed. The VCSEL array emits light at n different wavelengths, wherein n is at least two. A first portion of the VCSEL devices in the array emits light at a first wavelength and a second portion of the VCSEL devices emits light at a second wavelength. Each VCSEL device has an active region consisting of alternating bands of quantum wells and boundary layers bounded by top and bottom separate confinement layers. The active region is bounded by top and bottom mirrors. The length of the active region of the VCSEL devices that emit light at the first wavelength, &lgr;s1, is different from the length of the active region of the VCSEL devices that emit light at a second wavelength. The array is fabricated by forming successive layers of material on a III-V semiconductor substrate. The composition and dimensions of the individual devices are first determined from the desired emission wavelength, &lgr;sn, of the devices in the array.

Abstract: A method for electrically coupling thermoelectric cooling (TEC) elements together is described. The TEC elements are encased within an encapsulating material, such as epoxy, and a resist layer is laid on either end of the encapsulating material, covering the ends of the TEC elements. The resist layers are selectively developed to open locations in the resist layers in between adjacent elements. Conductive material, such as gold, is sputter deposited into the locations to provide electrical coupling of the elements.

Abstract: A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer. During formation of the contact structure, this thin metal layer reacts with the cap layer and the resulting reacted layer traps mobile impurities and self-interstitials diffusing within the cap layer and in nearby metal layers, preventing further migration into active areas of the semiconductor device. The contact metallization is formed of pure metal layers compatible with each other and with the underlying semiconductor cap layer such that depth of reaction is minimized and controllable by the thickness of the metal layers applied. Thin semiconductor cap layers, such as InGaAs cap layers less than 200 nm thick, may be used in the present invention with extremely thin pure metal layers of thickness 10 nm or less, thus enabling an increased level of integration for semiconductor optoelectronic devices.

Abstract: Flexible ground connectors are adapted to withstand temperature-induced stresses. The connectors may be formed of low thermal conductivity materials. The connectors may be used within a semiconductor package that also encloses a thermoelectric cooling device, a conductive submount, and a semiconductor light source. The submount may be grounded to the package wall by locating a pair of the flexible ground connectors across a gap to a ledge in the wall. The ground connectors may be formed of stainless steel, and they may be gold plated for improved electrical conductivity.

Abstract: A method of forming thin film waveguide regions in lithium niobate uses an ion implant process to create an etch stop at a predetermined distance below the lithium niobate surface. Subsequent to the ion implantation, a heat treatment process is used to modify the etch rate of the implanted layer to be in the range of about 20 times slower than the bulk lithium niobate material. A conventional etch process (such as a wet chemical etch) can then be used to remove the virgin substrate material and will naturally stop when the implanted material is reached. By driving the ions only a shallow distance into the substrate, a backside etch can be used to remove most of the lithium niobate material and thus form an extremely thin film waveguide that is defined by the depth of the ion implant. Other structural features (e.g., ridge waveguides) may also be formed using this method.

Abstract: An electro-absorption modulated laser is provided having three sections, a laser section, an isolation section, and a modulation section. The laser section produces light along a straight waveguide path. The modulation section also has a straight waveguide path, but is angled with respect to the laser section's path. The isolation section between the other two sections includes a path that is collinear with the respective laser or modulation section at each end, but is gradually curved in the middle.

Abstract: A method for securing a glass fiber to a housing includes positioning the glass fiber in proximity to the wall of a housing and applying a quantity of solder glass frit to the surface of the glass fiber. Sufficient solder glass frit is employed so as to occupy the gap between the glass fiber and the housing. The solder glass frit has a melting point lower than that of the glass fiber. The surface of the glass fiber is not metallized. Upon heating the solder glass frit softens and adheres to both the glass fiber and the wall of the housing. The fused solder glass frit secures the glass fiber to the housing and forms an hermetic seal therebetween.