Abstract: A mechanical oscillator endowed with a strip, with the aforesaid strip incorporating a first silicon layer having a crystal lattice extending along a first direction of one plane, a thermal compensation layer composed of a material having a Young's modulus thermal coefficient of opposite sign to that of the silicon, and a second silicon layer having a crystal lattice extending in a second direction of the plane, with the first and direction being offset at an angle of 45° within the plane of the layers, and with the thermal compensation layer extending between the first and second silicon layers.

Abstract: The invention relates to a micro-electromechanical device used as a force sensor, comprising a mobile mass connected to at least one securing zone by means of springs or deformable elements, and means for detecting the movement of the mobile mass, the mobile mass having an outer frame and an inner body, the outer frame and the inner body being connected by at least two flexible portions forming integral decoupling springs on two separate sides of the outer frame.

Abstract: An inertial sensor including at least one measurement beam and one active body formed of a proof body and of deformable plates, said active body being maintained in suspension inside of a tight enclosure via its plates, the measurement beam connecting a portion of the proof body to an internal wall of said enclosure, said measurement beam having a lower thickness than the proof body.

Abstract: Device for measuring pressure through the capacitive effect between two electrodes including at least one sensitive electrode spaced apart from and opposite a stationary electrode so as to define a cavity in which a reference pressure (Pref) exists. The device in accordance with the invention further includes a protective housing for insulating at least the stationary electrode from the ambient environment in which the pressure to be measured exists, the housing having at least one solid portion forming a recess for containing at least the stationary electrode, and a thinned portion forming the sensitive electrode.

Abstract: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

Abstract: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

Abstract: An electromechanical microstructure including a first mechanical part formed in a first electrically conductive material, and which includes a zone deformable in an elastic manner having a thickness value and an exposed surface, and a first organic film having a thickness, present on all of the exposed surface of the deformable zone. The thickness of the first film is such that the elastic response of the deformable zone equipped with the first film does not change by more than 5% compared to the response of the bare deformable zone, or the thickness of the first film is less than ten times the thickness of the deformable zone.

Abstract: An electromechanical microstructure including a first mechanical part formed in a first electrically conductive material, and which includes a zone deformable in an elastic manner having a thickness value and an exposed surface, and a first organic film having a thickness, present on all of the exposed surface of the deformable zone. The thickness of the first film is such that the elastic response of the deformable zone equipped with the first film does not change by more than 5% compared to the response of the bare deformable zone, or the thickness of the first film is less than ten times the thickness of the deformable zone.