Abstract: The invention relates to a micro-electromechanical device used as a force sensor, comprising a mobile mass connected to at least one securing zone by means of springs or deformable elements, and means for detecting the movement of the mobile mass, the mobile mass having an outer frame and an inner body, the outer frame and the inner body being connected by at least two flexible portions forming integral decoupling springs on two separate sides of the outer frame.

Abstract: A mechanical oscillator endowed with a strip, with the aforesaid strip incorporating a first silicon layer having a crystal lattice extending along a first direction of one plane, a thermal compensation layer composed of a material having a Young's modulus thermal coefficient of opposite sign to that of the silicon, and a second silicon layer having a crystal lattice extending in a second direction of the plane, with the first and direction being offset at an angle of 45° within the plane of the layers, and with the thermal compensation layer extending between the first and second silicon layers.

Abstract: An electromechanical device includes a stack formed of an insulating layer interposed between two solid layers, and a micromechanical structure of predetermined thickness suspended above a recess of predetermined depth, the recess and the micromechanical structure forming one of the two solid layers of the stack, and the insulating layer forming the bottom of the recess.

Abstract: A MEMS device comprises a first layer (1), a second layer (2) and a third layer (3) sealed together. A mobile structure (7.1, 7.2) in the second layer (2) is defined by openings (8.1, 8.2) in the second layer (2). In the first layer (1), there is at least one first-layer cavity (6.1, 6.2) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). In the third layer (3), there is at least one third-layer cavity (9) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). Therefore, the third-layer cavity (9) and the second layer (2) define a space within the MEMS device, A getter layer (10.1, 10.2) arranged on a surface of said space. The getter layer (10.1, 10.2) is preferably arranged on a surface of the second layer (2) and in particular, the getter layer (10.1, 10.2) is arranged on a static part of the second layer (2). Alternatively, the MEMS device has a third-layer cavity (24) with at least two recesses (25.1, 25.2, 25.3) and the getter layer (26.1, 26.

Abstract: A sensor which measures parameters such as acceleration, rotation and magnetic field comprises a substrate defining a plane and at least one sensing plate suspended above the substrate for movement in a sensing direction orthogonal to the substrate plane. A detection arm suspended above the substrate is rotational about an axis parallel to the substrate plane. An out-of-plane coupling structure couples the sensing plate to the detection arm for generating rotational movement of the detection arm, which is detected by a rotation detection structure. A pivot element arranged at a distance from the coupling structure facilitates tilting movement of the sensing plate.

Abstract: A sensor for measuring physical parameters such as acceleration, rotation, magnetic field, comprises a substrate (13) defining a substrate plane and at least one sensing plate (11, 12) suspended above the substrate (13) for performing a movement having at least a first component in a sensing direction. The sensing direction is orthogonal to the substrate plane. There is at least one detection arm (14.1, 14.2) that is suspended above the substrate (13) for performing a rotational movement about a rotation axis parallel to the substrate plane. An out-of-plane coupling structure (17.1, 17.4) is used to couple the first component of the movement of said sensing plate (11, 12) to said detection arm (14.1, 14.2) for generating the rotational movement of the detection arm (14.1, 14.2). A rotation detection structure cooperates with the detection arm (14.1, 14.2) for detecting the rotational movement of the detection arm (14.1, 14.2) with respect to the substrate plane. A pivot element (17.2, 17.

Abstract: A MEMS device comprises a first layer (1), a second layer (2) and a third layer (3) sealed together. A mobile structure (7.1, 7.2) in the second layer (2) is defined by openings (8.1, 8.2) in the second layer (2). In the first layer (1), there is at least one first-layer cavity (6.1, 6.2) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). In the third layer (3), there is at least one third-layer cavity (9) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). Therefore, the third-layer cavity (9) and the second layer (2) define a space within the MEMS device, A getter layer (10.1, 10.2) arranged on a surface of said space. The getter layer (10.1, 10.2) is preferably arranged on a surface of the second layer (2) and in particular, the getter layer (10.1, 10.2) is arranged on a static part of the second layer (2). Alternatively, the MEMS device has a third-layer cavity (24) with at least two recesses (25.1, 25.2, 25.3) and the getter layer (26.1, 26.

Abstract: A micromechanical sensor device for measuring angular z-axis motion comprises two vibratory structures each having at least one proof mass. A suspension structure maintains the two vibratory structures in a mobile suspended position above the substrate for movement parallel to the substrate plane in drive-mode (x-axis) direction and in sense-mode direction (y-axis). A coupling support structure connects the coupling structure to an anchor structure and enables a rotational swinging movement of the coupling structure, the rotational swinging movement having an axis of rotation that is perpendicular to the substrate plane. Each of the vibratory structures comprises at least one shuttle mass coupled to the at least one proof mass by sense-mode springs, which are more flexible in sense-mode direction than in drive-mode direction (x), for activating a vibration movement of each vibratory structure.

Abstract: An inertial sensor including at least one measurement beam and one active body formed of a proof body and of deformable plates, said active body being maintained in suspension inside of a tight enclosure via its plates, the measurement beam connecting a portion of the proof body to an internal wall of said enclosure, said measurement beam having a lower thickness than the proof body.

Abstract: A micro-electromechanical system (MEMS) device for measuring accelerations, angular rates, or for actuation comprises at least two substrates and at least one movable structure arranged in a cavity between the substrates. An electrically conducting frame surrounding the movable structure is arranged at an interface of the two substrates. The frame is electrically separated from the movable structure and connected by at least first and second electrically conducting connections to the first and second substrates, respectively. The frame may have a width of not more than 150 preferably not more than 50 ?m. The first connection is at an interface between the frame and the first substrate. The second connection is a layer applied at an outer periphery of the frame and a peripheral face of the second substrate. The structure keeps electrical fields and electromagnetic disturbances away from the sensor and may also be used for shielding micro-electronic circuits.

Abstract: Device for measuring pressure through the capacitive effect between two electrodes including at least one sensitive electrode spaced apart from and opposite a stationary electrode so as to define a cavity in which a reference pressure (Pref) exists. The device in accordance with the invention further includes a protective housing for insulating at least the stationary electrode from the ambient environment in which the pressure to be measured exists, the housing having at least one solid portion forming a recess for containing at least the stationary electrode, and a thinned portion forming the sensitive electrode.

Abstract: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

Abstract: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

Abstract: An electromechanical microstructure including a first mechanical part formed in a first electrically conductive material, and which includes a zone deformable in an elastic manner having a thickness value and an exposed surface, and a first organic film having a thickness, present on all of the exposed surface of the deformable zone. The thickness of the first film is such that the elastic response of the deformable zone equipped with the first film does not change by more than 5% compared to the response of the bare deformable zone, or the thickness of the first film is less than ten times the thickness of the deformable zone.

Abstract: An electromechanical microstructure including a first mechanical part formed in a first electrically conductive material, and which includes a zone deformable in an elastic manner having a thickness value and an exposed surface, and a first organic film having a thickness, present on all of the exposed surface of the deformable zone. The thickness of the first film is such that the elastic response of the deformable zone equipped with the first film does not change by more than 5% compared to the response of the bare deformable zone, or the thickness of the first film is less than ten times the thickness of the deformable zone.