Patents Assigned to TRS Technologies, Inc.
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Patent number: 11486055Abstract: A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3, wherein: M is a rare earth cation; MI is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, and In3+; MII is Nb5+; MI? is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, In3+, and Zr4; MII? is Nb5+ or Zr4+; 0<x?0.05; 0.02<y<0.7; and 0?z?1, provided that if either MI? or MII? is Zr4+, both MI? and MII? are Zr4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3 from the feeding material by a Bridgman method.Type: GrantFiled: August 31, 2018Date of Patent: November 1, 2022Assignees: TRS TECHNOLOGIES, INC., THE PENN STATE RESEARCH FOUNDATIONInventors: Jun Luo, Wesley S. Hackenberger, Fei Li, Shujun Zhang, Thomas R. Shrout
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Patent number: 8894765Abstract: A PIN-PMN-PT ferroelectric single crystal and a method of manufacture are disclosed. The PIN-PMN-PT ferroelectric single crystal is oriented and polarized along a single crystallographic direction. The PIN-PMN-PT ferroelectric single crystal ferroelectric has increased remnant polarization.Type: GrantFiled: November 12, 2010Date of Patent: November 25, 2014Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Edward F. Alberta
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Patent number: 8821748Abstract: A ceramic or single crystal ferroelectric and a method of manufacture are disclosed. The ceramics and single crystals of the present disclosure are located near phase boundaries between ferroelectric and antiferroelectric phases. These ceramics, single crystals, and composite may be used in pulsed power applications.Type: GrantFiled: November 12, 2010Date of Patent: September 2, 2014Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Edward F. Alberta
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Patent number: 8597535Abstract: A ternary single crystal relaxor piezoelectric of PMN-PZ-PT grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.Type: GrantFiled: May 16, 2011Date of Patent: December 3, 2013Assignee: TRS Technologies, Inc.Inventors: Jun Luo, Wesley Hackenberger
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Patent number: 8241519Abstract: A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.Type: GrantFiled: March 16, 2010Date of Patent: August 14, 2012Assignees: TRS Technologies, Inc., Penn State Research FoundationInventors: Jun Luo, Wesley S. Hackenberger, Shujun Zhang, Richard J. Meyer, Jr., Thomas R. Shrout, Nevin P. Sherlock
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Patent number: 8148877Abstract: A piezoelectric composite micromachined ultrasound transducer including single and multilayer 1-D and 2-D arrays having through-wafer-vias (TWVs) that significantly decreased electrical impedance per element, and hence the improved electrical impedance matching to T/R electronics and improved signal to noise ratio is disclosed. The TWVs facilitate integrated interconnection in single element transducers (positive and negative contact on the same side) and array transducers (contact pads array for integration with T/R switches and/or pre-amplifier circuits).Type: GrantFiled: April 8, 2011Date of Patent: April 3, 2012Assignee: TRS Technologies, Inc.Inventors: Xiaoning Jiang, Wesley S. Hackenberger, Kevin A. Snook
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Publication number: 20120037839Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.Type: ApplicationFiled: August 10, 2011Publication date: February 16, 2012Applicant: TRS TECHNOLOGIES, INC.Inventors: Wesley S. HACKENBERGER, Jun LUO, Thomas R. SHROUT, Kevin A. SNOOK, Shujun ZHANG, Fei LI, Raffi SAHUL
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Publication number: 20110311815Abstract: A ternary single crystal relaxor piezoelectric of PMN-PZ-PT grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.Type: ApplicationFiled: May 16, 2011Publication date: December 22, 2011Applicant: TRS TECHNOLOGIES, INC.Inventors: Jun LUO, Wesley HACKENBERGER
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Publication number: 20110215677Abstract: A piezoelectric composite micromachined ultrasound transducer including single and multilayer 1-D and 2-D arrays having through-wafer-vias (TWVs) that significantly decreased electrical impedance per element, and hence the improved electrical impedance matching to T/R electronics and improved signal to noise ratio is disclosed. The TWVs facilitate integrated interconnection in single element transducers (positive and negative contact on the same side) and array transducers (contact pads array for integration with T/R switches and/or pre-amplifier circuits).Type: ApplicationFiled: April 8, 2011Publication date: September 8, 2011Applicant: TRS TECHNOLOGIES, INC.Inventors: Xiaoning JIANG, Wesley S. HACKENBERGER, Kevin A. SNOOK
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Patent number: 8008842Abstract: A piezoelectric composite micromachined ultrasound transducer including single and multilayer 1-D and 2-D arrays having through-wafer-vias (TWVs) that significantly decreased electrical impedance per element, and hence the improved electrical impedance matching to T/R electronics and improved signal to noise ratio is disclosed. The TWVs facilitate integrated interconnection in single element transducers (positive and negative contact on the same side) and array transducers (contact pads array for integration with T/R switches and/or pre-amplifier circuits).Type: GrantFiled: October 27, 2008Date of Patent: August 30, 2011Assignee: TRS Technologies, Inc.Inventors: Xiaoning Jiang, Wesley S. Hackenberger, Kevin A. Snook
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Publication number: 20110191997Abstract: A piezoelectric composite micromachined ultrasound transducer including single and multilayer 1-D and 2-D arrays having through-wafer-vias (TWVs) that significantly decreased electrical impedance per element, and hence the improved electrical impedance matching to T/R electronics and improved signal to noise ratio is disclosed. The TWVs facilitate integrated interconnection in single element transducers (positive and negative contact on the same side) and array transducers (contact pads array for integration with T/R switches and/or pre-amplifier circuits).Type: ApplicationFiled: April 8, 2011Publication date: August 11, 2011Applicant: TRS TECHNOLOGIES, INC.Inventors: Xiaoning JIANG, Wesley S. HACKENBERGER, Kevin A. SNOOK
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Patent number: 7972527Abstract: A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.Type: GrantFiled: January 31, 2008Date of Patent: July 5, 2011Assignee: TRS Technologies, Inc.Inventors: Jun Luo, Wesley S. Hackenberger
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Patent number: 7969073Abstract: A tangentially poled piezoelectric single crystal ring resonator is disclosed. A single crystal material is machined into elements and formed into a ring structure. The single crystal elements have a <110> poled tangential axis. The elements may also have a <211>, <511> or <322> orientation range in the radial direction. The elements may have a generally wedge shape.Type: GrantFiled: December 18, 2008Date of Patent: June 28, 2011Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Kevin A. Snook
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Patent number: 7884042Abstract: An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.Type: GrantFiled: July 16, 2010Date of Patent: February 8, 2011Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Seongtae Kwon
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Publication number: 20110017937Abstract: A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.Type: ApplicationFiled: March 16, 2010Publication date: January 27, 2011Applicant: TRS Technologies, Inc.Inventors: Jun LUO, Wesley S. HACKENBERGER, Shujun ZHANG, Richard J. MEYER, JR., Thomas R. SHROUT, Nevin P. SHERLOCK
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Publication number: 20100321133Abstract: A tangentially poled piezoelectric single crystal ring resonator is disclosed. A single crystal material is machined into elements and formed into a ring structure. The single crystal elements have a <110> poled tangential axis. The elements may also have a <211>, <511> or <322> orientation range in the radial direction. The elements may have a generally wedge shape.Type: ApplicationFiled: December 18, 2008Publication date: December 23, 2010Applicant: TRS TECHNOLOGIES, INC.Inventors: Wesley S. HACKENBERGER, Kevin A. SNOOK
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Publication number: 20100279844Abstract: An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.Type: ApplicationFiled: July 16, 2010Publication date: November 4, 2010Applicant: TRS TECHNOLOGIES, INC.Inventors: Wesley HACKENBERGER, Seongtae Kwon
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Patent number: 7781358Abstract: An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.Type: GrantFiled: February 15, 2008Date of Patent: August 24, 2010Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Seongtae Kwon
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Publication number: 20090194732Abstract: A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.Type: ApplicationFiled: January 31, 2008Publication date: August 6, 2009Applicant: TRS Technologies, Inc.Inventors: Jun Luo, Wesley Hackenberger
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Publication number: 20090108708Abstract: A piezoelectric composite micromachined ultrasound transducer including single and multilayer 1-D and 2-D arrays having through-wafer-vias (TWVs) that significantly decreased electrical impedance per element, and hence the improved electrical impedance matching to T/R electronics and improved signal to noise ratio is disclosed. The TWVs facilitate integrated interconnection in single element transducers (positive and negative contact on the same side) and array transducers (contact pads array for integration with T/R switches and/or pre-amplifier circuits).Type: ApplicationFiled: October 27, 2008Publication date: April 30, 2009Applicant: TRS TECHNOLOGIES, INC.Inventors: Xiaoning JIANG, Wesley S. HACKENBERGER, Kevin A. SNOOK