Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 * n eff . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 * n eff . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: A structure of Vertical Cavity Surface-Emitting Laser (VCSEL) comprises an ion-implanted region with gas-furnace configuration arranged in the second mirror layer around a laser light output window, in order to retain several conductive passages between the inner and outer rims of the ion-implanted region, so as to let the aperture of the inner rim of the metal layer (that is, the aperture of the output window) be expanded without loss of resistance. Not only the shading effect can be removed, the spectrum width suppression function can be preserved, but also various photoelectric characteristics such as transmission eye diagram and photoelectric curve linearity can be improved, in addition, high-speed transmission characteristics can also be optimized.

Abstract: A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

Abstract: An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding to layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

Abstract: A high-speed multi-channel optical transmitter module includes a plurality of laser-diode (LD) components, a plurality of photo-diode (PD) components, an MT ferrule, and a waveguide component. These components are firstly packaged as sub-modules individually, and then these sub-modules are packaged to form the high-speed multi-channel optical transmitter module. Therefore, the amount of individual components contained in the module is decreased, the complexity of structure is simplified, the precision of positioning is increased, such that the time and labors required in the assembling and packaging processes can be decreased, and the defect-free rate of products can be increased.

Abstract: A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.

Abstract: A high-speed multi-channel optical transmitter module includes a plurality of laser-diode (LD) components, a plurality of photo-diode (PD) components, an MT ferrule, and a waveguide component. These components are firstly packaged as sub-modules individually, and then these sub-modules are packaged to form the high-speed multi-channel optical transmitter module. Therefore, the amount of individual components contained in the module is decreased, the complexity of structure is simplified, the precision of positioning is increased, such that the time and labors required in the assembling and packaging processes can be decreased, and the defect-free rate of products can be increased.

Abstract: An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

Abstract: A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.

Abstract: A thin optical imaging module of a biometric apparatus includes a first glass substrate, a first optical prism film, a second optical prism film, and an image sensor. The first glass substrate further includes a fingerprint imaging area, a vein imaging area, a contact surface, a reflective interface, and an attaching surface. The first optical prism film adhered to the attaching surface is located under the fingerprint imaging area. The second optical prism film is adhered to a position under the first optical prism film. The image sensor disposed in correspondence to the first glass substrate is located under the attaching surface.

Abstract: A biometric authentication device uses IR-VCSELs as light sources for performing biometric authentication by providing clear images. A light guide module is introduced to minimize the size of the device. Moreover, the biometric authentication device uses a single image sensing module to gather a vein image and a fingerprint image into the same detection signal which is then analyzed and compared with the pre-stored vein feature data and fingerprint feature data.

Abstract: A thin optical imaging module of a biometric apparatus includes a first glass substrate, a first optical prism film, a second optical prism film, and an image sensor. The first glass substrate further includes a fingerprint imaging area, a vein imaging area, a contact surface, a reflective interface, and an attaching surface. The first optical prism film adhered to the attaching surface is located under the fingerprint imaging area. The second optical prism film is adhered to a position under the first optical prism film. The image sensor disposed in correspondence to the first glass substrate is located under the attaching surface.

Abstract: An alignment jig for an optical lens array is furnished on an optical alignment apparatus. The alignment machine is for performing active optical alignment operations of a sensor chip located on a circuit board and a lens socket plugged with a fiber plug. The alignment jig includes a support arm, a pick-up mechanism and a pushing mechanism. The support arm is fixed to the optical alignment apparatus for supporting the alignment jig. The pick-up mechanism is furnished on the support arm for picking-up and holding the lens socket in a detachable manner at a predetermined position corresponding to the sensor chip. The pushing mechanism holds the plugging status when the fiber plug is plugged into the lens socket and provides a pushing force, such that the fiber plug has a tendency to be pushed toward and engage the lens socket tightly.

Abstract: A biometric authentication device uses IR-VCSELs as light sources for performing a better biometric authentication by providing clearer images. A light guide module is introduced to minimize the size of the device. Moreover, the biometric authentication device uses a single image sensing module to gather the vein image and the fingerprint image into the same detection signal which is then analyzed and compared with the pre-stored vein feature data and fingerprint feature data. Therefore, the biometric authentication device can achieve an approach in lowering hardware costs, simplifying circuit designs and providing an outstanding performance.

Abstract: A chip array structure for laser diodes, formed on an active surface of a semiconductor chip produced from a semiconductor process includes a plurality of light-emitting elements in an array arrangement, at least one insulation wall, at least two wire bond areas and a plurality of connection electrodes. The insulation wall separates the light-emitting elements into at least two light-emitting districts. The wire bond areas are positioned respective to the corresponding light-emitting districts. The connection electrodes electrically couple the wire bond areas with the corresponding light-emitting districts. The wire bond areas have independent electrodes, and the light-emitting districts are electrically isolated by the insulation wall.

Abstract: A biometric authentication device uses IR-VCSELs as light sources for performing a better biometric authentication by providing clearer images. A light guide module is introduced to minimize the size of the device. Moreover, the biometric authentication device uses a single image sensing module to gather the vein image and the fingerprint image into the same detection signal which is then analyzed and compared with the pre-stored vein feature data and fingerprint feature data. Therefore, the biometric authentication device can achieve an approach in lowering hardware costs, simplifying circuit designs and providing an outstanding performance.

Abstract: An alignment jig for an optical lens array is furnished on an optical alignment apparatus. The alignment machine is for performing active optical alignment operations of a sensor chip located on a circuit board and a lens socket plugged with a fiber plug. The alignment jig includes a support arm, a pick-up mechanism and a pushing mechanism. The support arm is fixed to the optical alignment apparatus for supporting the alignment jig. The pick-up mechanism is furnished on the support arm for picking-up and holding the lens socket in a detachable manner at a predetermined position corresponding to the sensor chip. The pushing mechanism holds the plugging status when the fiber plug is plugged into the lens socket and provides a pushing force, such that the fiber plug has a tendency to be pushed toward and engage the lens socket tightly.

Abstract: A chip array structure for laser diodes, formed on an active surface of a semiconductor chip produced from a semiconductor process includes a plurality of light-emitting elements in an array arrangement, at least one insulation wall, at least two wire bond areas and a plurality of connection electrodes. The insulation wall separates the light-emitting elements into at least two light-emitting districts. The wire bond areas are positioned respective to the corresponding light-emitting districts. The connection electrodes electrically couple the wire bond areas with the corresponding light-emitting districts. The wire bond areas have independent electrodes, and the light-emitting districts are electrically isolated by the insulation wall.

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.