Abstract: A method of plasma processing a substrate in a plasma chamber is provided. The method includes the steps of supplying a power supply signal to electrodes arranged within the plasma chamber in order to form a plasma in the plasma chamber, monitoring at least one parameter related to the plasma processing, determining a feature related to the at least one monitored parameter, and adjusting the power supply signal during the plasma processing to modify, in particular reduce, the feature. The modification of the feature eliminates or mitigates formation of crazing on the substrate.

Abstract: A balun configured for a power range between 500 W and 5 kW output includes a balanced signal port comprising a first connection and a second connection and further includes a single-ended signal port comprising a third connection and a fourth connection, the fourth connection being connected to ground. In addition, the balun includes a first capacitor disposed between the first connection and a first end of a first resistor and a second capacitor disposed between the second connection and the first end of the first resistor. A second end of the first resistor is connected to ground.

Abstract: A method adjusts an output power of a power supply supplying electrical power to a plasma in a plasma chamber. The method includes: connecting the power supply to at least one electrode in the plasma chamber; transporting one or more substrates relative to the electrode using a substrate carrier; maintaining the plasma by the electrical power; processing the one or more substrates with the plasma; and adjusting the output power based on a parameter related to a distance between a surface of the electrode facing a carrier-substrate-assembly and a surface of the substrate-carrier-assembly facing the electrode.

Abstract: A power converter configured to generate a high-frequency power signal comprises at least one amplifier stage having first and second amplifier paths each having an amplifier, the first amplifier path outputting a first amplifier path output signal and the second amplifier path outputting a second amplifier path output signal that, has a phase shift relative to the first amplifier path output signal greater than 0° and less than 180°. The first and second amplifier paths are connected to a phase-shifting coupler that is configured to couple the first and second amplifier path output signals to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths comprises a SiC MOSFET.

Abstract: An arc detector for detecting arcs in an RF plasma system includes at least two inputs configured to connect to an RF source, at least one output configured to connect to a plasma load, and a 3 dB coupler connected to the at least two inputs and the at least one output. The arc detector further includes a measuring device configured to measure at least two physical quantities transmitted between the 3 dB coupler and the at least one output, a determinator configured to determine an evaluation quantity based on the at least two physical quantities, and a differentiator configured to differentiate the evaluation quantity. The arc detector additionally includes a comparator configured to compare the output quantity of the differentiator with a reference value indicative of an arc.

Abstract: A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two, preferably more than two, power output ports each for connection to one of the plasma process chambers, and a controller configured to control the power converter to deliver the bipolar output power to the power output ports, using one or more control parameters selected from a list comprising: power, voltage, current, excitation frequency, and threshold for protective measures, such that at least one of the control parameters at a first power output port is different from the corresponding control parameter at a different power output port.

Abstract: A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes a power input port for connection to an electrical power delivering grid, at least two power output ports each for connection to one of the plasma processing chambers, and a controller configured to control the power converter to deliver the bipolar output power to the power output ports, using at least one of control parameters including power, voltage, current, excitation frequency, and threshold for protective measures. The controller includes a virtual power supply for each power output port, and each virtual power supply includes a separate complete set of all fixed and time varying parameters and internal states associated with the operation of the individual power output port.

Abstract: A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two power output ports each for connection to one of the plasma processing chambers, and a controller configured to control delivering the bipolar output power to the power output ports, using at least one control parameter. The controller is configured to obtain a full set of desired values for the control parameter for the power output ports, calculate whether the power converter is capable of delivering every desired value to every output port, and if so, calculate a sequence of pulses of power delivery to the output ports to supply the power to plasma processes in the plasma processing chambers.

Abstract: Methods, apparatus and systems for detecting an arc during supplying a plasma process in a plasma chamber with a power are provided. An example plasma power supply includes: a DC source, an output signal generator, a first signal sequence measurement device for measuring a first signal sequence present between the DC source and the output signal generator, a second signal sequence measurement device for measuring a second signal sequence present at an output of the output signal generator, and a controller configured to generate a reference signal sequence based on one of the first and second signal sequences, to compare the reference signal sequence and the other of the first and second signal sequences that has not been used to determine the reference signal sequence, and to generate a detection signal if the reference signal sequence and the other of the first and second signal sequences cross.

Abstract: A plasma impedance matching unit for a plasma power supply system includes a first power connector for coupling the matching unit to a RF power source, a second power connector for coupling the matching unit to a plasma load, a data link interface for directly coupling the matching unit to another plasma impedance matching unit via a data link, and a controller configured to control the matching unit to match an impedance from the first power connector to an impedance at the second power connector, to operate as a master for at least one other impedance matching unit and/or at least one RF power source of the plasma power supply system, and to communicate via the data link interface with the at least one other impedance matching unit and/or the at least one RF power source of the plasma power supply system.

Abstract: An arc treatment device includes an arc detector operable to detect whether an arc is present in a plasma chamber, an arc energy determiner operable to determine an arc energy value based on an energy supplied to the plasma chamber while the arc is present in the plasma chamber, and a break time determiner operable to determine a break time based on the determined arc energy value.

Abstract: Systems and methods of monitoring a discharge in a plasma process are disclosed. The methods include supplying the plasma process with a periodic power supply signal, determining a first signal waveform in a first time interval within a first period of the power supply signal, determining a second signal waveform in a second time interval within a second period of the power supply signal, the second time interval being at a position within the second period corresponding to a position of the first time interval within the first period, comparing the second signal waveform with a reference signal waveform to obtain a first comparison result, determining that the first comparison result corresponds to a given first comparison result, and in response, time-shifting one of the second signal waveform and the reference signal waveform, and comparing the time-shifted signal waveform with the non-time-shifted signal waveform to obtain a second comparison result.

Abstract: A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.

Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.

Abstract: A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.

Abstract: An apparatus for generating and maintaining plasma for plasma processing using inductively coupled RF power. The apparatus includes a resonant circuit having a resonant capacitance and a resonant inductance, an excitation circuit for exciting the resonant circuit, and a coupling element for coupling RF power from the inductance into a plasma chamber.

Abstract: An apparatus for generating and maintaining plasma for plasma processing using inductively coupled RF power. The apparatus includes a resonant circuit having a resonant capacitance and a resonant inductance, an excitation circuit for exciting the resonant circuit, and a coupling dement for coupling RF power from the inductance into a plasma chamber.

Abstract: According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled.

Abstract: A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.