Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.

Abstract: A single-photon detection element comprises a substrate comprising a first surface and a second surface opposite each other, and a plurality of plasmonic nanopatterns provided on the second surface. The substrate comprises a high-concentration doping region provided adjacent to the first surface and having a second conductivity type, and a first well provided between the high-concentration doping region and the plurality of plasmonic nanopatterns and having a first conductivity type different from the second conductivity type. The plurality of plasmonic nanopatterns are configured to contact the first well.

Abstract: A single-photon detection element includes a substrate including a first surface and a second surface located opposite to each other, and a plurality of plasmonic nanopatterns provided on the second surface, wherein the substrate includes a high-concentration doping region provided adjacent to the first surface, a substrate region provided between the high-concentration doping region and the plurality of plasmonic nanopatterns, and a first well provided between the substrate region and the high-concentration doping region.

Abstract: A single-photon detection device includes a first well having a first conductivity type, a second well provided on the first well and having a second conductivity type that is different from the first conductivity type, a first depletion forming region provided on the second well and having the first conductivity type, a main depletion region provided between the first well and the second well, and a first sub-depletion region provided between the second well and the first depletion forming region, wherein the first well and the first depletion forming region are spaced apart from each other by the second well.

Abstract: A single-photon detection device includes a first well having a first conductivity type, a second well provided on the first well and having a second conductivity type that is different from the first conductivity type, a first depletion forming region provided on the second well and having the first conductivity type, a main depletion region provided between the first well and the second well, and a first sub-depletion region provided between the second well and the first depletion forming region, wherein the first well and the first depletion forming region are spaced apart from each other by the second well.

Abstract: A single-photon detection pixel comprises a substrate, a first well provided on the substrate and having a first conductivity type, a plurality of heavily doped regions provided within an upper portion of the first well having a second conductivity type different from the first conductivity type and positioned separately from each other, a plurality of guard rings each surrounding the plurality of heavily doped regions connected to each other and having the second conductivity type, and an isolation region extending along an edge of the first well to surround the plurality of heavily doped regions and the plurality of guard rings and comprising an insulating material.

Abstract: A single-photon detection pixel includes a substrate, a first well provided in the substrate, a pair of heavily doped regions provided on the first well, and a contact provided between the pair of heavily doped regions, wherein the substrate and the pair of heavily doped regions have a first conductivity type, and the first well and the contact have a second conductivity type that is different from the first conductivity type.

Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.