Abstract: To fabricate back side contact pads that are suitable for use in a vertical integrated circuit, vias are made in the face side of a wafer, and dielectric and contact pad metal are deposited into the vias. Then the wafer back side is etched until the metal is exposed. When the etch exposes the insulator at the via bottoms, the insulator is etched slower than the wafer material (e.g. silicon). Therefore, when the dielectric is etched off and the metal is exposed, the dielectric protrudes down from the wafer back side around the exposed metal contact pads, by about 8 &mgr;m in some embodiments. The protruding dielectric portions improve insulation between the wafer and the contact pads when the contact pads are soldered to an underlying circuit. In some embodiments, before the contact pads are soldered, additional dielectric is grown on the wafer back side without covering the contact pads.

Abstract: An article holder uses a gas flow, for example, a vortex, to hold the article in a desired position. The gas flow is substantially restricted to an article portion reserved for handling. The result of the processing is less sensitive to the condition (e.g. temperature) of that portion than to the condition of the rest of the article. Therefore, if the gas flow affects the condition (e.g., temperature) of the article portion contacting the gas flow, the processing result is improved.