Abstract: A solar cell structure includes a semiconductor substrate having a front side and a back side. A pyramid structure is disposed on the front side of the semiconductor substrate. The pyramid structure has an aspect ratio between 0.5-1.2. A front passivation layer is disposed on the pyramid structure. A first anti-reflection layer is disposed on the pyramid structure. The first anti-reflection layer is a multi-layered, graded anti-reflection layer having at least three coating layers. The at least three coating layers comprise a silicon oxynitride layer having a thickness of 15-30 nm and a refractive index between 1.65 and 1.75. The silicon oxynitride layer is an outermost layer of the multi-layered, graded anti-reflection layer.

Abstract: A solar cell structure includes a semiconductor substrate having a front side and a back side; a pyramid structure disposed on the front side of the semiconductor substrate; a front passivation layer disposed on the pyramid structure; and a first anti-reflection layer disposed on the pyramid structure. The first reflective layer is a multi-layered anti-reflection layer having at least three coating layers. A front electrode is provided on the first anti-reflection layer. A rear passivation layer is provided on the back side of the semiconductor substrate. A second anti-reflection layer is disposed on the rear passivation layer. A back electrode is disposed on the second anti-reflection layer.

Abstract: A solar cell structure includes a substrate, a doped emitter layer on a front side of the substrate, and an anti-reflection layer covering the doped emitter layer. The anti-reflection layer is a multi-layer structure including at least one ion diffusion barrier such as amorphous silicon film or a silicon-rich silicon nitride film directly covering the doped emitter layer.