Abstract: This invention relates to CMOS based micro-photonic systems comprising an optical source, means for optical transmission, and a detector, wherein the optical source is capable of emitting light having a wavelength being in a range in which a nitride comprising layer of said means for optical transmission is transparent and being below a detection threshold of said detector so as to enable the generation of a micro-photonic system in silicon integrated circuit technology.

Abstract: The present invention relates to a sensor device. More particularly, the invention relates to a CMOS-based micro-optical-electromechanical-sensor (MOEMS) device with silicon light emitting devices, silicon waveguides and silicon detectors being fabricated using current Complementary Metal Oxide Semiconductor (CMOS) technology or Silicon on Insulator (SOI) technology. According to the invention there is provided a sensor comprising: a Silicon-based light emitting structure; an integrated electro-optical mechanical interface structure that is capable to sense mechanical deflections; an integrated electronic driving and processing circuitry so as to detect physical parameters such as vibration, motion, rotation, acceleration.

Abstract: This invention relates to relates to silicon light emitting devices (SiLEDs), and its application into current Complementary Metal Oxide Semiconductor (CMOS) technology, as well into future Silicon on Insulator (SOI) technology. According to the invention, a silicon based light emitting device is designed to operate by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm and such that it is compatible with CMOS silicon nitride, silicon oxi-nitride and polymer waveguide technology. This favors diverse electro-optical system applications such as electro-optical couplers, fast data transfer on and from chip, various optical interconnect configurations as well as diverse on-chip sensor, fluidic and micro-optical-mechanical sensor applications. Under particular operating conditions emissions at specific wavelengths (for example the longer wavelengths) may be favored, while in other cases tuning of the emitted radiation may be obtained.

Abstract: An optical communication system is provided comprising of a three terminal silicon based light emitting device operating by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm; a low loss optical waveguide operating in the below threshold wavelength detection range for Silicon of 850 nm; and an optical detector, wherein a complete and all-silicon optical communication system is formed being capable of transferring electrical signals in terms of optical intensity variations, such intensities then being propagated through the waveguide and being detected by the optical detector; and being converted back to electrical signals. In a particular mode of operation of the system, wavelength modulation may be obtained. In other applications, transponding action and optical amplification may be obtained.

Abstract: A process for treating impure water includes adding magnesium hydroxide and/or ammonium hydroxide to the water. This neutralizes the impure water and reacts with dissolved metals in the water. The metals are precipitated as metal hydroxides/oxides, which are removed from the water. Thereafter barium hydroxide is added to the water. The barium hydroxide reacts with dissolved sulphates to produce barium sulphate and, when magnesium hydroxide is used, with dissolved magnesium, to produce magnesium hydroxide. Barium sulphate and, when present, magnesium hydroxide are removed from the water. When ammonium hydroxide is used, ammonia is stripped from the water. Carbon dioxide is then added to the water. The carbon dioxide reacts with dissolved calcium in the water. The calcium is precipitated as calcium carbonate, which is removed from the water.

Abstract: An optical communication system is provided comprising of a three terminal silicon based light emitting device operating by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm; a low loss optical waveguide operating in the below threshold wavelength detection range for Silicon of 850 nm; and an optical detector, wherein a complete and all-silicon optical communication system is formed being capable of transferring electrical signals in terms of optical intensity variations, such intensities then being propagated through the waveguide and being detected by the optical detector; and being converted back to electrical signals. In a particular mode of operation of the system, wavelength modulation may be obtained. In other applications, transponding action and optical amplification may be obtained.

Abstract: The present invention relates to a sensor device. More particularly, the invention relates to a CMOS-based micro-optical-electromechanical-sensor (MOEMS) device with silicon light emitting devices, silicon waveguides and silicon detectors being fabricated using current Complementary Metal Oxide Semiconductor (CMOS) technology or Silicon on Insulator (SOI) technology. According to the invention there is provided a sensor comprising: a Silicon-based light emitting structure; an integrated electro-optical mechanical interface structure that is capable to sense mechanical deflections; an integrated electronic driving and processing circuitry so as to detect physical parameters such as vibration, motion, rotation, acceleration.

Abstract: This invention relates to relates to silicon light emitting devices (SiLEDs), and its application into current Complementary Metal Oxide Semiconductor (CMOS) technology, as well into future Silicon on Insulator (SOI) technology. According to the invention, a silicon based light emitting device is designed to operate by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm and such that it is compatible with CMOS silicon nitride, silicon oxi-nitride and polymer waveguide technology. This favours diverse electro-optical system applications such as electro-optical couplers, fast data transfer on and from chip, various optical interconnect configurations as well as diverse on-chip sensor, fluidic and micro-optical-mechanical sensor applications. Under particular operating conditions emissions at specific wavelengths (for example the longer wavelengths) may be favoured, while in other cases tuning of the emitted radiation may be obtained.

Abstract: The invention provides an enrichment process for a PGM-group metals containing stream, said process including the steps of contacting activated carbon particles with a PGM-rich stream by contacting the stream with a batch of the particles on a continuous basis, whereby at least some of the PGM-group metals are adsorbed from the stream onto active surface sites of the activated carbon and a PGM-metals depleted stream passes out of contact with the activated carbon batch, thereafter stripping the PGM-group metals from the activated carbon batch by means of a concentrated HCl solution as stripping agent, wherein the stripping agent is contacted with the activated carbon batch on a continuous flow basis and the PGM-group metals loaded stripping agent is removed from contact with the activated carbon from which the PGM-group metals have been stripped, and then regenerating the activated carbon batch by washing with water and, if necessary, reactivating the carbon particles.

Abstract: A process for treating impure water includes adding magnesium hydroxide and/or ammonium hydroxide to the water. This neutralizes the impure water and reacts with dissolved metals in the water. The metals are precipitated as metal hydroxides/oxides, which are removed from the water. Thereafter barium hydroxide is added to the water. The barium hydroxide reacts with dissolved sulphates to produce barium sulphate and, when magnesium hydroxide is used, with dissolved magnesium, to produce magnesium hydroxide. Barium sulphate and, when present, magnesium hydroxide are removed from the water. When ammonium hydroxide is used, ammonia is stripped from the water. Carbon dioxide is then added to the water. The carbon dioxide reacts with dissolved calcium in the water. The calcium is precipitated as calcium carbonate, which is removed from the water.

Abstract: The invention provides an enrichment process for a PGM-group metals containing stream, said process including the steps of contacting activated carbon particles with a PGM-rich stream by contacting the stream with a batch of the particles on a continuous basis, whereby at least some of the PGM-group metals are adsorbed from the stream onto active surface sites of the activated carbon and a PGM-metals depleted stream passes out of contact with the activated carbon batch, thereafter stripping the PGM-group metals from the activated carbon batch by means of a concentrated HCl solution as stripping agent, wherein the stripping agent is contacted with the activated carbon batch on a continuous flow basis and the PGM-group metals loaded stripping agent is removed from contact with the activated carbon from which the PGM-group metals have been stripped, and then regenerating the activated carbon batch by washing with water and, if necessary, reactivating the carbon particles.