Abstract: An oscillating device includes a first quartz crystal resonator, a driving circuit, a first buffer, a bandpass filter, a second quartz crystal resonator, and a second buffer coupled to each other. The driving circuit drives the first quartz crystal resonator to generate a first oscillating signal with a resonant frequency. The first buffer isolates from a load variation to generate a first clock signal in response to the first oscillating signal. The bandpass filter allows only the first clock signal with the harmonic frequency of the resonant frequency within a passband to pass through, thereby generating a filtered signal. The second quartz crystal resonator rectifies the filtered signal to generate a second oscillating signal having the harmonic frequency. The second buffer isolates from a load variation to generate a second clock signal in response to the second oscillating signal.

Abstract: An oscillating device includes a first quartz crystal resonator, a driving circuit, a first buffer, a bandpass filter, a second quartz crystal resonator, and a second buffer coupled to each other. The driving circuit drives the first quartz crystal resonator to generate a first oscillating signal with a resonant frequency. The first buffer isolates from a load variation to generate a first clock signal in response to the first oscillating signal. The bandpass filter allows only the first clock signal with the harmonic frequency of the resonant frequency within a passband to pass through, thereby generating a filtered signal. The second quartz crystal resonator rectifies the filtered signal to generate a second oscillating signal having the harmonic frequency. The second buffer isolates from a load variation to generate a second clock signal in response to the second oscillating signal.

Abstract: A processing method of single-crystal quartz material includes the following steps. Determining an area to be processed where twin crystals are prone to occur on the single-crystal quartz material. Using a heater to heat an area to be processed on the single-crystal quartz material, so that processing difficulty of the area to be processed is reduced. Using a laser to process the single-crystal quartz material in a heated portion of the area to be processed.

Abstract: A processing method of a single-crystal quartz material includes the following steps. An area to be processed in which the single-crystal quartz material readily generates twin crystals is determined. The area to be processed on the single-crystal quartz material is modified using a modifier, so that a processing difficulty of the area to be processed is reduced. The single-crystal quartz material of the modified area to be processed is processed using a processor.

Abstract: A sensing device includes a quartz substrate, a first electrode, and a second electrode. The first electrode and the second electrode are respectively disposed on two opposite surfaces of the quartz substrate. The first electrode includes a first gold metal layer, a first chromium metal layer, and a first chromium oxide layer. The first gold metal layer is disposed on a surface of the quartz substrate. The first chromium metal layer is disposed between the first gold metal layer and the quartz substrate. The first chromium oxide layer is disposed between the first chromium metal layer and the first gold metal layer. A thickness of the first chromium oxide layer is greater than or equal to 1 nanometer and less than or equal to 10 nanometers.

Abstract: A quartz resonator including a casing, a pad, an oscillator crystal and a thermistor is provided. The casing includes a first casing and a second casing. The pad is disposed on an outer surface of the second casing. The oscillator crystal includes two thick parts and a thin part whose two ends are respectively connected to the two thick parts. The two thick parts are sandwiched between the first casing and the second casing. An inner surface of the first casing and the thin part of the oscillator crystal form a sealed first space, and an inner surface of the second casing and the thin part of the oscillator crystal form a sealed second space. The thermistor is disposed in the first space or the second space and is electrically connected to the pad.

Abstract: A quartz resonator including a casing, a pad, an oscillator crystal and a thermistor is provided. The casing includes a first casing and a second casing. The pad is disposed on an outer surface of the second casing. The oscillator crystal includes two thick parts and a thin part whose two ends are respectively connected to the two thick parts. The two thick parts are sandwiched between the first casing and the second casing. An inner surface of the first casing and the thin part of the oscillator crystal form a sealed first space, and an inner surface of the second casing and the thin part of the oscillator crystal form a sealed second space. The thermistor is disposed in the first space or the second space and is electrically connected to the pad.

Abstract: A resonator including a vibration structure, a first electrode, and a second electrode is provided. The vibration structure includes a vibration region, a protrusion portion, an opening, and a frame portion. The vibration region has a first surface and a second surface opposite to the first surface. The protrusion portion surrounds the vibration region. The opening is disposed at a side of the vibration region and between the vibration region and the protrusion portion. The opening has a first side adjacent to the vibration region and a second side far away from the vibration region. The second side is opposite to the first side. A length of the first side is greater than a length of the second side. The frame portion surrounds the protrusion portion. The first electrode is disposed on the first surface. The second electrode is disposed on the second surface.

Abstract: A crystal oscillation chip including a casing and a crystal oscillation piece is provided. The crystal oscillation piece is disposed in the casing. The crystal oscillation piece includes a flat substrate, two electrodes and two conductive silver glues, the two electrodes are respectively disposed on two opposite main surfaces of the flat substrate. The flat substrate includes at least one notch. The notch is disposed at a side surface of the flat substrate and is recessed along a direction vertical from the side surface and toward an interior of the flat substrate. A height of the notch is the same as a thickness of the flat substrate, and two conductive silver glues connect the flat substrate and the casing.

Abstract: A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit generates a clock signal and adjust a clock frequency of the clock signal according to a control voltage generated by the processor circuit. The processor circuit calculates a current frequency aging rate value based on a current clock frequency. The processor circuit calculates a control voltage regulation rate value based on the current frequency aging rate value and a control voltage slope, and compensates the control voltage based on the control voltage regulation rate value in the holdover state. Alternatively, the processor circuit calculates a frequency regulation value based on the current frequency aging rate value and an oscillator resolution of the synchronizer, and provides the frequency regulation value to the synchronizer in the holdover state to compensate an output frequency of the synchronizer.

Abstract: An oscillating device is arranged in an environment having an ambient temperature. The oscillating device includes a heater, an oscillator, and a temperature-controlled circuit. The oscillator is configured to generate a first clock signal whose frequency is temperature-dependent on the ambient temperature. The temperature-controlled circuit is directly electrically connected to the heater. The temperature-controlled circuit senses the ambient temperature to generate an input voltage that is temperature-dependent on the ambient temperature and provides the input voltage for the heater. The temperature-controlled circuit includes a MOSFET and a temperature sensing circuit. The drain of the MOSFET is directly electrically connected to the heater. The MOSFET and the heater are electrically connected between a high voltage terminal and a low voltage terminal. The temperature sensing circuit is electrically connected to the gate of the MOSFET.

Abstract: A resonator device includes a crystal chip, two metal electrodes, and two groove portions. The crystal chip has a first surface and a second surface opposite to each other, and includes a first area, a second area and a third area. The second area surrounds the first area, and the third area surrounds the second area. The second area is located between the first area and the third area. The two metal electrodes are respectively disposed on the first surface and the second surface. The metal electrode includes a first electrode portion, a connecting portion, and a second electrode portion. The first electrode portion is disposed in the first area. The connecting portion is disposed in the second area. The second electrode portion is disposed in the third area. The connecting portion connects the first electrode portion and the second electrode portion, and the second electrode portion extends to an edge of the crystal chip.

Abstract: A quartz oscillator including a first plate, a second plate, and a quartz sheet is provided. The quartz sheet has an oscillation zone. The quartz sheet is disposed between the first plate and the second plate. The quartz oscillator has a first outer surface, a side surface, and a first connection surface. The first outer surface is located on the first plate. The first connection surface is located between the first outer surface and the side surface. The first outer surface, the side surface, and the first connection surface are not parallel to each other. A manufacturing method of a quartz oscillator is also provided.

Abstract: A quartz oscillator including a first plate, a second plate, and a quartz sheet is provided. The quartz sheet has an oscillation zone. The quartz sheet is disposed between the first plate and the second plate. The quartz oscillator has a first outer surface, a side surface, and a first connection surface. The first outer surface is located on the first plate. The first connection surface is located between the first outer surface and the side surface. The first outer surface, the side surface, and the first connection surface are not parallel to each other. A manufacturing method of a quartz oscillator is also provided.

Abstract: Disclosed is a quartz oscillator including a first cover, a second cover, and a quartz oscillation device. The quartz oscillation device is disposed between the first cover and the second cover. The quartz oscillation device includes a quartz sheet, a first conductive layer and a second conductive layer. The first conductive layer is disposed on the first surface of the quartz sheet. The second conductive layer is disposed on the second surface of the quartz sheet. The quartz sheet has a groove or an opening penetrating therethrough. An included angle between a side wall of the groove or the opening and the first surface or the second surface is 60° to 90°.

Abstract: Disclosed is a quartz oscillation device including a quartz sheet, a first conductive layer and a second conductive layer. The first conductive layer is disposed on the first surface of the quartz sheet. The second conductive layer is disposed on the second surface of the quartz sheet. The quartz sheet has a groove or an opening penetrating therethrough. An included angle between a side wall of the groove or the opening and the first surface or the second surface is 60° to 90°.

Abstract: An oscillating device is arranged in an environment having an ambient temperature. The oscillating device includes a heater, an oscillator, and a temperature-controlled circuit. The oscillator is configured to generate a first clock signal whose frequency is temperature-dependent on the ambient temperature. The temperature-controlled circuit is directly electrically connected to the heater. The temperature-controlled circuit senses the ambient temperature to generate an input voltage that is temperature-dependent on the ambient temperature and provides the input voltage for the heater. The temperature-controlled circuit includes a MOSFET and a temperature sensing circuit. The drain of the MOSFET is directly electrically connected to the heater. The MOSFET and the heater are electrically connected between a high voltage terminal and a low voltage terminal. The temperature sensing circuit is electrically connected to the gate of the MOSFET.

Abstract: An oscillator wafer-level-package structure and oscillator crystal structure having internal cut-off region thereof are provided. At least one cut-off region is formed inside the oscillator crystal structure, penetrating its upper and lower surface, such that the crystal main region and its adjacent region are separated. A bottom layer includes an upper plane. A capping layer includes a lower plane, and the oscillator crystal structure is disposed there in between, forming an upper and lower cavity with the capping layer and the bottom layer. By engaging an upper and lower seal ring surrounding the oscillator crystal structure, the oscillator crystal structure is sealed, forming the wafer-level-package structure. By designing internal cut-off region inside the oscillator crystal structure, frequency offset after encapsulation is reduced, and better device characteristics are obtained.

Abstract: An electroless plating method includes the following steps. An object to be plated is provided, wherein the object to be plated is a metal material. A cleaning process is performed on the object to be plated to remove impurities on a surface of the object to be plated. A plasma treatment process is performed on the surface of the object to be plated to ionize a metal of the surface of the object to be plated. The object to be plated after the plasma treatment process is immersed in a chemical plating solution to form a plating layer.

Abstract: A resonator chip and a manufacturing method thereof are provided. The manufacturing method of the resonator chip includes the following steps. A quartz wafer is provided. The quartz wafer has a first surface and a second surface opposite to the first surface. A first etching process is performed on the quartz wafer to form multiple inverted mesa portions, and the inverted mesa portions has a first thickness. The quartz wafer is singulated to form multiple resonator chips. Each of the resonator chips includes one of the inverted mesa portions. A second etching process is performed on the resonator chips to form chamfers at edges of the resonator chips.