Abstract: An oxide-confined vertical cavity surface emitting laser having reduced parasitic capacitance. The VCSEL includes a substrate having a first mirror stack grown epitaxially thereon. The first mirror stack includes a plurality of semiconductor layers and is doped with a first doping type. An active region is grown epitaxially above the first mirror stack for generating a lasing emission. A control layer is grown epitaxially above the first mirror stack, between first mirror stack and the active region or above the active region, and includes a central non-oxidized conducting portion and an outer, laterally oxidized insulating portion. A second mirror stack is grown epitaxially above the active region and the control layer. The second mirror stack includes a second plurality of semiconductor layers doped with a second doping type. The second plurality of semiconductors layers includes pairs of high index and low index materials.

Abstract: An optoelectronic device having a highly conductive carrier tunneling current aperture. The device includes a centrally positioned current aperture formed from a quantum layer made of a III-IV-V semiconductor compound, which is doped with a first doping type. The current aperture is laterally confined by an oxide of the III-IV-V semiconductor compound. Adjacent layers are also formed of a semiconductor material that is doped with the first doping type.