Abstract: A manufacture having an electrical response to incident photons includes a semiconductor substrate; a chalcogen-doped semiconductor active layer on a first side of the substrate; a first contact in electrical contact with the active layer; and a second contact in electrical contact with the substrate; wherein, photons incident upon the active layer cause a variation in current between the first and second contacts.
Type:
Grant
Filed:
January 7, 2011
Date of Patent:
September 16, 2014
Assignees:
President and Fellows of Harvard College, U.S. Army RDECOM-ARDEC
Inventors:
Aurore J. Said, Daniel L. Recht, Jeffrey M. Warrender, Michael J. Aziz
Abstract: A manufacture having an electrical response to incident photons includes a semiconductor substrate; a chalcogen-doped semiconductor active layer on a first side of the substrate; a first contact in electrical contact with the active layer; and a second contact in electrical contact with the substrate; wherein, photons incident upon the active layer cause a variation in current between the first and second contacts.
Type:
Application
Filed:
January 7, 2011
Publication date:
October 18, 2012
Applicants:
U.S. ARMY RDECOM-ARDEC, PRESIDENT AND FELLOWS OF HARVARD COLLEGE
Inventors:
Aurore J. Said, Daniel L. Recht, Jeffrey M. Warrender, Michael J. Aziz