Abstract: A radio frequency integrated circuit (and method of making) for enhancing wireless communication and/or sensing systems comprising a base comprising a gallium arsenide (GaAs) substrate; a binary phase shift keying modulator fabricated on the base; a power amplifier fabricated on the base and operatively associated with the binary phase shift keying modulator; the power amplifier having a first shunt operatively associated therewith; a transmit/receive switch fabricated on the base, the transmit/receive switch being operatively associated with the power amplifier and being alternately connectable to an antenna port adapted to be connected to an antenna; a low noise amplifier fabricated on the base; the low noise amplifier being alternately connectable to the antenna port, the low noise amplifier having a second shunt operatively associated therewith; the circuit operating in a transmit stage in which the power amplifier is connected to the antenna port and in a receive stage in which the low noise amplifier is