Abstract: The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
Type:
Application
Filed:
July 6, 2012
Publication date:
August 22, 2013
Applicant:
UBPRECISION CO., LTD.
Inventors:
Jea-Gun Park, Jin-Hyung Park, Jae-Hyung Lim, Jong-Young Cho, Ho Choi, Hee-Sub Hwang