Abstract: The present application is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present application is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present application is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present application is a photodiode array aving PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.

Abstract: The present invention is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode comprises a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+ region through the wafer and a diffusion of an n+ region through the wafer.

Abstract: The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array awing PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.

Abstract: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.

Abstract: The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark current, low capacitance and improved signal-to-noise ratio characteristics. More specifically, the present invention is a photodiode and/or photodiode array that includes a metal shield for reflecting light back into a scintillator crystal, thus allowing for a relatively small p+ diffused area.

Abstract: The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.

Abstract: The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. In one embodiment, a photodiode array comprises a substrate having at least a front side and a back side, a plurality of diode elements integrally formed in the substrate forming the array, wherein each diode element has a p+ fishbone pattern on the front side, and wherein the p+ fishbone pattern substantially reduces capacitance and crosstalk between adjacent photodiodes, a plurality of front surface cathode and anode contacts, and wire interconnects between diode elements made through a plurality of back surface contacts.

Abstract: This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

Abstract: The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark current, low capacitance and improved signal-to-noise ratio characteristics. More specifically, the present invention is a photodiode and/or photodiode array that includes a metal shield for reflecting light back into a scintillator crystal, thus allowing for a relatively small p+ diffused area.

Abstract: The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array having PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.

Abstract: The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

Abstract: The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of cross-talk, and increased flexibility in application. In one embodiment, the present invention comprises a plurality of front side illuminated photodiodes, optionally organized in the form of an array, with both the anode and cathode contact pads on the back side. The front side illuminated, back side contact photodiodes have superior performance characteristics, including less radiation damage, less crosstalk using a suction diode, and reliance on reasonably thin wafers. Another advantage of the photodiodes of the present invention is that high density with high bandwidth applications can be effectuated.

Abstract: This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.

Abstract: The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.

Abstract: This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

Abstract: The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.

Abstract: The present invention provides for reduced radiation damage susceptibility, decreased affects of crosstalk, and increased flexibility in application. In one embodiment, the present invention includes a back side illuminated photodiode array with a back side etching that minimizes the active area layer, thereby decreasing the affects of crosstalk. The back side etching is preferably, but by no way of limitation, in the form of “U” or “V” shaped grooves. The back side illuminated with back side etching (BSL-BE) photodiodes are implemented in an array and have superior performance characteristics, including less radiation damage due to a thinner active area, and less crosstalk due to shorter distances for minority carriers to diffuse to the PN junction.

Abstract: The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of cross-talk, and increased flexibility in application. In one embodiment, the present invention comprises a plurality of front side illuminated photodiodes, optionally organized in the form of an array, with both the anode and cathode contact pads on the back side. The front side illuminated, back side contact photodiodes have superior performance characteristics, including less radiation damage, less crosstalk using a suction diode, and reliance on reasonably thin wafers. Another advantage of the photodiodes of the present invention is that high density with high bandwidth applications can be effectuated.

Abstract: A strap or fastener for removably securing an oximeter probe to the appendage of a patient. The strap is made of an elastic material that wraps around the outside of the oximeter probe and is secured to the oximeter probe by attachment mechanisms such as Velcro that can be readjusted after initial application without producing excessive stress on the spring hinge of the oximeter probe.

Abstract: A self-contained safety and security system and method that performs the multiple functions of theft deterrence, battery saving, battery analysis system, accident protection, and telemetry and control data communication for vehicles is disclosed. The electronically-based system for a vehicle having an existing power transmission circuit including a battery that can be readily installed and made operational by an individual having no special training using common household tools. The system requires the installation of no dedicated wiring in the vehicle. Furthermore, the system preferably installs without any cutting or splicing of the wiring in the vehicle's electrical system. The system preferably includes an electrical activity sensor sensing electrical activity on the power transmission circuit, a motion sensor sensing vibration associated with the vehicle, a battery-disconnect switch, and a controller to receive signals from the electrical activity and motion sensors and control the switch.