Abstract: Provided are an AC electroluminescence device includes a bottom electrode including a first electrode and a second electrode apart from each other, wherein AC power is applied between the first electrode and the second electrode; an electron injecting layer disposed on the bottom electrode; an emission layer disposed on the electron injecting layer; a dielectric layer disposed on the emission layer; a top electrode, which is disposed on the dielectric layer and includes a first portion opposing the first electrode and a second portion opposing the second electrode; a first emission region defined by a first overlapping region of the emission layer between the first portion of the top electrode and the first electrode of the bottom electrode; and a second emission region defined by a second overlapping region of the emission layer between the second portion of the top electrode and the second electrode of the bottom electrode.

Abstract: Provided are a light-emitting diode and a method of fabricating the same. The light-emitting diode includes a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity; an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer; and a second electrode, which is formed on the N-type zinc oxide layer.