Abstract: Proposed is a method of measuring micro LED electroluminescence by using a photoelectric effect, having the following effects: a micro LED epitaxy wafer and a micro LED verification substrate are included and allowed to be connected to each other in parallel when the micro LED epitaxy wafer and the micro LED verification substrate come into contact; electric power is indirectly applied by using the photoelectric effect, so as to enable measurement of the electroluminescence (EL) at high speed; a way of applying voltage by using the photoelectric effect requires photon energy to be smaller than a bandgap of a target LED material and to be larger than bandgap energy of a material for the micro LED verification substrate; and the micro LED verification substrate is composed of a material for generating the photoelectric effect, so as to enable maximally increasing the effectiveness of the electroluminescence measurement using the photoelectric effect.

Abstract: Proposed is a method of manufacturing a micro LED display by units of dies omitting transfer of individual light-emitting elements, the method having effects that die-unit display transfer is performed by using a die-unit display, which is composed of light-emitting elements each including a driving element, die-unit display inspection, and a vacuum chuck-based LED pick-and-place transfer method, so that a perpendicular-line gap (ETC, Edge to Chip) between an edge side and an edge chip of each die may be at most half of a chip-to-chip gap (CTC, Chip to Chip), a bonding pad is included within the perpendicular-line gap (ETC) of the edge chip, a bonding gap for each LED die may not exceed half the chip-to-chip (CTC) gap, the driving elements are integrated into the light-emitting elements in a metallization process, and electrical/optical characteristic inspection by units of dies is performed on a wafer.

Abstract: The present disclosure relates to a rapid thermal processing apparatus for rapid heat treatment of a substrate, and particularly, to increasing the accuracy in measuring the temperature of a substrate to be thermally processed by configuring a thermocouple for measuring the temperature of the substrate under the same conditions as the substrate to be thermally processed so as to be attached to and detached from the chamber, and the present disclosure provides a rapid thermal processing apparatus having a thermocouple installed to measure a temperature of a substrate to be thermally processed located inside a chamber, and the rapid thermal processing apparatus includes a mounting hole formed in the chamber, and a thermocouple kit inserted into and mounted to the mounting hole so that a bonding portion of a thermocouple wire is located at a thermocouple substrate extending into the chamber.

Abstract: A rapid heat treatment apparatus comprises: a chamber for rapid heat treatment; a support stage radiating light to rapidly heat a substrate for rapid heat treatment; a substrate for temperature measurement which is made of a same material as the substrate for rapid heat treatment; a thermocouple for temperature measurement measuring a temperature of the substrate for temperature measurement; a support part formed of a light-transmitting material that supports the substrate for temperature measurement; and a light-transmitting plate disposed between the support part and the heat source device to isolate the opposite internals spaces of the chamber from each other, wherein the temperature of the substrate for temperature measurement, which is measured by the thermocouple, is considered to be the temperature of the substrate subjected to rapid heat treatment.