Abstract: An electronic device includes a substrate, a plurality of micro semiconductor structure, a plurality of conductive members, and a non-conductive portion. The substrate has a first surface and a second surface opposite to each other. The micro semiconductor structures are distributed on the first surface of the substrate. The conductive members electrically connect the micro semiconductor structures to the substrate. Each conductive member is defined by an electrode of one of the micro semiconductor structures and a corresponding conductive pad on the substrate. The non-conductive portion is arranged on the first surface of the substrate. The non-conductive portion includes one or more non-conductive members, and the one or more non-conductive members are attached to the corresponding one or more conductive members of the one or more micro conductive structures.

Abstract: An image detector includes a substrate, a circuit layer, a plurality of light detecting elements, a plurality of driving elements and a crystal scintillation layer. The substrate has a surface. The circuit layer is arranged on the surface of the substrate, and defines a plurality of detecting areas arranged in an array. The light detecting elements and the driving elements are disposed at the detecting areas and electrically connected with the circuit layer. Each driving element drives one or more of the light detecting elements. The crystal scintillation layer is arranged opposite to the substrate and covers the detecting areas. The light detecting elements and the driving elements connect with the surface of the substrate. At least one of the light detecting elements and the driving elements is formed by a process different from the process of forming the circuit layer on the substrate.

Abstract: An electronic detection interface comprises a substrate structure and a plurality of detection units in array. The substrate structure includes a circuit film, which comprises a plurality of circuit units in array. The detection units are disposed on a surface of the substrate structure, and are corresponded to the circuit units in a respect manner. Each of the detection units includes at least one resilient conductive pillar, which is electrically connected to each of the circuit units.

Abstract: A photoelectric device includes a target substrate, a circuit pattern layer disposed on the target substrate, a plurality of micro photoelectric elements electrically connected to the circuit pattern layer, and a supplemental repair element electrically connected to the circuit pattern layer. The target substrate is configured with a plurality of connection positions and a repair position disposed with an offset with relative to a corresponding one of the connection positions. The offset is greater than or equal to zero. The micro photoelectric elements are individually disposed on at least a part of the connection positions of the target substrate. The supplemental repair element has an electrode disposed on the repair position of the target substrate, and the electrode is connected to the circuit pattern layer. On the target substrate, the supplemental repair element is arbitrary with respect to the micro photoelectric elements.

Abstract: A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.

Abstract: An electronic device comprises a target substrate, a micro semiconductor structure array, a conductor array, and a connection layer. The micro semiconductor structure array is disposed on the target substrate. The conductor array corresponds to the micro semiconductor structure array, and electrically connects the micro semiconductor structure array to a pattern circuit of the target substrate. The conductors of the conductor array are independent from one another. Each conductor is an integrated member formed by eutectic bonding a conductive pad of the target substrate and a conductive electrode of the corresponding one of the micro semiconductor structures of the micro semiconductor structure array. The connection layer connects the micro semiconductor structures to the target substrate. The connection layer excludes a conductive material. The connection layer contacts and surrounds the conductors, so that the connection layer and the conductors together form a one-layer structure.

Abstract: A micro semiconductor stacked structure includes at least two stacked structure array units, wherein one stacked structure array unit is stacked on the other stacked structure array unit. In particular, the stacked structure array unit is stacked on the other stacked structure array unit along a vertical direction. Each stacked structure array unit includes a substrate, a conductive pattern layer disposed on the substrate, and a plurality of micro semiconductor devices disposed on the substrate and electrically connected to the conductive pattern layer.

Abstract: A target substrate with micro semiconductor structures is manufactured by following steps of: attaching a pre-adhesive layer on a target substrate; patterning the adhesive layer to form a plurality of micro contact protrusions; and using the target substrate to perform a selective batch pickup procedure to pick up a plurality of micro semiconductor structures so as to form the target substrate with micro semiconductor structures.

Abstract: A pre-conductive array disposed on a target circuit substrate comprises a plurality of conductive electrode groups disposed on the target circuit substrate, and at least a conductive particle dispose on each of conductive electrodes of a part or all of the conductive electrode groups. The at least a conductive particle and the corresponding conductive electrode form a pre-conductive structure, and the pre-conductive structures form the pre-conductive array.

Abstract: A micro semiconductor stacked structure includes at least two stacked structure array units, wherein one stacked structure array unit is stacked on the other stacked structure array unit. In particular, the stacked structure array unit is stacked on the other stacked structure array unit along a vertical direction. Each stacked structure array unit includes a substrate, a conductive pattern layer disposed on the substrate, and a plurality of micro semiconductor devices disposed on the substrate and electrically connected to the conductive pattern layer.

Abstract: A luminance compensation method of a light-emitting device is disclosed. The light-emitting device has a plurality of light-emitting elements. The luminance compensation method includes following steps of: obtaining a position of at least one of the light-emitting elements in a brightness anomalous status; and changing a brightness of at least one of the light-emitting elements disposed adjacent to the light-emitting element in the brightness anomalous status for compensating a brightness of the light-emitting elements in the brightness anomalous status.

Abstract: A display device has a plurality of sub-pixels, and includes a circuit substrate, a plurality of micro light-emitting semiconductor elements, a light conversion layer and an opposite substrate. The micro light-emitting semiconductor elements are disposed separately on the circuit substrate and configured corresponding to the sub-pixels. The light conversion layer has a plurality of light conversion portions disposed respectively corresponding to at least partial of the micro light-emitting semiconductor elements. The light emitted from the micro light-emitting semiconductor element corresponding to the sub-pixel passes through the light conversion portion to generate white light. The opposite substrate is disposed at one side of the light conversion layer away from the circuit substrate. In another display device, the light emitted from the micro light-emitting semiconductor element passes through the light conversion layer to generate white light.

Abstract: A manufacturing method of an optoelectronic semiconductor device includes: providing a matrix substrate, which comprises a substrate and a matrix circuit disposed on the substrate; transferring a plurality of micro-sized optoelectronic semiconductor elements from a temporary substrate to the matrix substrate, wherein the micro-sized optoelectronic semiconductor elements are separately disposed on the matrix substrate, and at least one electrode of each micro-sized optoelectronic semiconductor element is electrically connected with the matrix circuit; forming a protective layer completely covering the micro-sized optoelectronic semiconductor elements, wherein the height of the protective layer is greater than the height of the micro-sized optoelectronic semiconductor elements; and grinding the protective layer until a residual on a back surface of each micro-sized optoelectronic semiconductor element and the back surface are removed to expose a new surface.

Abstract: An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 ?m and 100 ?m, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 ?m.

Abstract: A method of batch transferring micro semiconductor structures is provided for effectively and efficiently picking up a batch of or a large amount of micro structures and transferring them to a target substrate, so it can be widely applied in transferring a lot of various micro semiconductor structures. The method includes steps of: attaching an adhesive material to a plurality of array-type micro semiconductor structures; and providing a roll-to-attach mechanism for alternately processing linear contacts between the array-type micro semiconductor structures and a target substrate. The array-type micro semiconductor structures are optionally picked up in batch from the adhesive material and transferred in batch to the target substrate as the linear contacts are alternately processed.

Abstract: A pre-conductive array disposed on a target circuit substrate comprises a plurality of conductive electrode groups disposed on the target circuit substrate, and at least a conductive particle dispose on each of conductive electrodes of a part or all of the conductive electrode groups. The at least a conductive particle and the corresponding conductive electrode form a pre-conductive structure, and the pre-conductive structures form the pre-conductive array.

Abstract: An optoelectronic semiconductor device is disclosed. The optoelectronic semiconductor device includes a matrix substrate including a matrix circuit and a substrate, and a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit. Each of the microsized optoelectronic semiconductor elements includes a first electrode and a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes. The first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively. Reflectivities of at least some of junctions between the first electrode and the third electrode, or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.

Abstract: An optoelectronic semiconductor device and a manufacturing method are disclosed. The manufacturing method includes steps of: a step of providing a microsized optoelectronic semiconductor element, a step of providing a matrix substrate, a step of electrode alignment and lamination, a step of electrode coupling, a step of illumination and lift-off and a step of removal. The step of electrode coupling is to provide a first light to concentratedly illuminate at least some of the junctions between the first electrodes and the third electrodes or concentratedly illuminate at least some of the junctions between the second electrodes and the fourth electrodes. The step of illumination and lift-off is to provide a second light to concentratedly illuminate at least some of the interfaces between the microsized optoelectronic semiconductor elements and the epitaxial substrate to peel off the microsized optoelectronic semiconductor elements from the epitaxial substrate.

Abstract: An opto-electronic apparatus and a manufacturing method thereof are disclosed. The manufacturing method of the opto-electronic apparatus includes the following steps of: disposing a matrix circuit on a substrate, wherein the matrix circuit has a matrix circuit thickness between the highest point of the matrix circuit and the surface of the substrate; disposing a plurality of first protrusions above the substrate, wherein at least one of the first protrusions has a first protrusion thickness between the highest point of the first protrusion and the surface of the substrate, and the first protrusion thickness is greater than the matrix circuit thickness; and performing a transfer step for transferring a plurality of first opto-electronic units from a first carrier to the first protrusions and bonding the first protrusions to at least two of the first opto-electronic units with an adhesive material.