Abstract: The invented apparatus can be used to monitor the radiant energy delivered to a substrate for treatment thereof. The radiant energy can be laser light or light generated by a flash-lamp, for example. The apparatus includes an energy-tapping member such as a beam splitter, that is positioned between a source and optical element(s) used to generate and modify radiant energy, and a substrate to be treated with the radiant energy. The energy-tapping member receives radiant energy from the source and optical element(s), and divides the radiant energy from the source and optical element(s) into two portions. The first portion of radiant energy travels from the energy-tapping member to the substrate for treatment thereof. The apparatus includes an energy sensor such as a photodiode, arranged to receive the second portion of radiant energy. The energy sensor generates a signal indicative of the radiant energy supplied to the substrate.

Abstract: The invented method can be used to melt and recrystallize the source and drain regions of an integrated transistor device(s) using a laser, for example. The invented method counteracts shadowing and interference effects caused by the presence of the gate region(s) during annealing of the source and drain regions with radiant energy generated by a laser, for example. The invented method includes forming a radiant energy absorber layer over at least the gate region(s) of an integrated transistor device(s), and irradiating the radiant energy absorber layer with radiant energy to generate heat in the source and drain regions as well as in the radiant energy absorber layer. The heat generated in the radiant energy absorber layer passes through the gate region(s) to portions of source and drain regions of the integrated transistor device(s) adjacent the gate region(s).

Abstract: The invented method can be used to form silicide contacts to an integrated MISFET device. Field isolation layers are formed to electrically isolate a portion of the silicon substrate, and gate, source and drain regions are formed therein. A polysilicon runner(s) that makes an electrical connection to the integrated device, is formed on the isolation layers. The structure is subjected to ion implantation to amorphized portions of the silicon gate, source, drain and runner regions. A metal layer is formed in contact with the amorphized regions, and the metal layer overlying the active region of the integrated device is selectively irradiated using a mask. The light melts part of the gate, and amorphized source and drain regions while the remaining portions of the integrated device and substrate remain in their solid phases. Metal diffuses into the melted gate, source and drain regions which are thus converted into respective silicide alloy regions.

Abstract: A method of forming a silicide region (80) on a Si substrate (10) in the manufacturing of semiconductor integrated devices, a method of forming a semiconductor device (MISFET), and a device having suicide regions formed by the present method. The method of forming a silicide region involves forming a silicide region (80) in the (crystalline) Si substrate having an upper surface (12) and a lower surface (14). The method comprises the steps of first forming an amorphous doped region (40) in the Si substrate at or near the upper surface, to a predetermined depth (d). This results in the formation of an amorphous-crystalline interface (I) between the amorphous doped region and the crystalline Si substrate. The next step is forming a metal layer (60) atop the Si substrate upper surface, in contact with the amorphous doped region. The next step involves performing backside irradiation with a first radiation beam (66).

Abstract: The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures.

Abstract: An active vibration isolation and payload reaction force compensation system includes a number of isolation legs which support equipment subject to undesirable vibrations. Each leg includes an elastomeric support member which supports the mass of the equipment and attenuates seismic forces transmitted from the ground to the system. A number of force actuators fixed to each leg and to the equipment in oppositely directed pairs provide forces directed to compensate for motions of the equipment. Six accelerometers are provided on the equipment to measure accelerations in six degrees of freedom. A control system, responsive to signals from the accelerometers, causes actuation of the force actuators.

Abstract: The respective magnets of each of a plurality of spaced Halbach magnet arrays in both the X and Y directions that incorporate in the arrays in both directions, the magnets having a filed oriented parallel to the Z axis in alternately the positive and negative directions. The magnets in each array in each direction that are not shared by the crossing Halbach magnet arrays each has a horizontal field orientation parallel to either the X or the Y axis with the filed direction in each instance pointing toward the adjacent magnet having its filed oriented in the positive Z direction. Additionally, up to four layers of coils of wire in separate X-Y planes in substantially vertical alignment with each other contain coils each with a selected orientation relative to the X or Y axis such that they provide levitation, lateral motion, as well as roll, pitch and yaw adjustments to the magnet array forming an X-Y stage for precision positioning an object located on the top surface of the magnet.

Abstract: An air-probe structure of an air-gauge nozzle that defines an air-probe bore having an elongated, relatively small-area output tip (e.g., 0.3.times.1.3 millimeters) situated at the air-probe structure's output end. Such an air-gauge nozzle is useful in controlling the distance between the bore's output tip and a rowbar workpiece (employed in an optical microlithographic pole trimming step of the fabrication process for thin-film heads) in accordance with the air pressure measured by the air gauge. The air-probe structure's output end preferably also comprises a relatively large-area protective manifold (e.g., 6.times.7 millimeters) surrounding the elongated, relatively small-area output tip.

Abstract: The invented apparatus is a relatively small-volumed chamber useful for processing a substrate. The apparatus includes a reference member with a substantially flat surface. The apparatus also includes a stage member with a surface that supports the substrate, and that has a gas bearing surrounding this support surface. Gas flows through the bearing are regulated to generate a seal of the substrate from ambient gases upon bringing the gas bearing close to the reference member's flat surface. The seal generated by the gas bearing can also be used to contain process gas in proximity to the substrate. Such process gas can be introduced into and exhausted from the chamber through an inlet and outlet, respectively, defined in the reference member. The apparatus can include a window fixed in the reference member. Patterned light or a particle beam can be directed through the window to the contained substrate to cause selective reactions to occur thereon.

Abstract: An apparatus in accordance with this invention includes an alignment mark that is formed in a substrate. The alignment mark extends across a dice line so that, upon dicing the substrate, the mark is exposed in the substrate's side edge. The mark is formed at a predetermined distance from a position at which a feature is desired to be formed on the substrate's side edge using a mask. Accordingly, the mark is a positional reference that can be used for highly accurate placement of the feature on the side surface of the substrate with the mask. Preferably, the mark is formed of metal or other material enhanced to a size that is readily detectable by an alignment system with which the mark is to be used. The invention also includes methods for making the alignment mark.

Abstract: A method for fabricating a plurality of shallow-junction metal oxide semiconductor field-effect transistors (MOSFETs) on a selected area of a silicon wafer, in the case in which the MOSFETs are spaced from one another by substantially transparent isolation elements. The method includes the step of flooding the entire selected area with laser radiation that is intended to effect the heating to a desired threshold temperature of only the selected depth of a surface layer of silicon that has been previously amorphized to this selected depth and then doped. This threshold temperature is sufficient to melt amorphized silicon but is insufficient to melt crystalline silicon.

Abstract: Pre-amorphization of a surface layer of crystalline silicon to an ultra-shallow (e.g., less than 100 nm) depth provides a solution to fabrication problems including (1) high thermal conduction in crystalline silicon and (2) shadowing and diffraction-interference effects by an already fabricated gate of a field-effect transistor on incident laser radiation. Such problems, in the past, have prevented prior-art projection gas immersion laser doping from being effectively employed in the fabrication of integrated circuits comprising MOS field-effect transistors employing 100 nm and shallower junction technology.

Abstract: The method of this invention produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes the steps of producing an amorphous region on the silicon body using ion implantation, for example, forming or positioning a metal such as titanium, cobalt or nickel in contact with the amorphous region, and irradiating the metal with intense light from a laser source, for example, to cause metal atoms to diffuse into the amorphous region. The amorphous region thus becomes an alloy region with the desired silicide composition. Upon cooling after irradiation, the alloy region becomes partially crystalline. To convert the alloy region into a more crystalline form, the invented method preferably includes a step of treating the alloy region using rapid thermal annealing, for example.

Abstract: The respective square cross-section permanent magnets of each of a plurality of spaced Halbach magnet arrays, attached to the bottom of movable X-Y stage and aligned with a given one of the X and Y axes, are spaced from one another parallel to the other one of the X and Y axes of by the width of the square cross-section cooperates with both a first set of a plurality of flat stationary electromagnet coils of wire and a second set of a plurality of flat stationary electromagnet coils of wire that substantially lie in proximate horizontal X, Y planes and, respectively, are angularly offset by +45.degree. and -45.degree. with respect to the given one of the X and Y horizontal axes to provide a lateral translational force on the stage with respect to the horizontal X and/or Y axes and/or a levitating translational force on the stage with respect to the vertical Z axis.

Abstract: The apparatus of this invention redirects light input to the apparatus without significant light loss, and preferably without increasing the light's etendue. The apparatus includes a light guide and a redirection member. The member has input, output and reflective surfaces. The member's input surface is joined to the light guide to define an interface, and the member's output surface is situated adjacent to a medium that can be another light guide or redirection member, a gas such as ambient air, or a vacuum, for example. The member is configured to redirect light traveling in the light guide from its reflective surface by a predetermined redirection angle.

Abstract: This invention includes a pin mirror arranged to receive light, preferably from a laser source. The pin mirror has a reflective surface that diffracts and reflects the received light to generate a diffraction-limited spherical wavefront. The pin mirror can reflect the wavefront in a predetermined direction by angling the pin mirror's reflective surface with respect to the direction of travel of the light incident to the pin mirror. The capability of the pin mirror to generate a diffraction-limited spherical wavefront and to direct the wavefront in a predetermined direction provides the capability to test objects or systems with relatively high numerical apertures, and yet allows for a reduction in the number and criticality of the properties of optical elements that would otherwise be required in an interferometer.

Abstract: A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes.

Abstract: A substrate alignment and exposure system is disclosed The alignment is performed by capturing an image of the substrate with a pattern recognition system, determining the offset from the alignment and moving the substrate relative to the reticle to be in alignment. A first optical alignment system which captures an image of a position of the substrate off of the primary axis of the exposure optics is used to perform pre-alignment. A second optical alignment system captures an image of the reticle and the substrate through the lens of the exposure optics. The pattern recognition system recognizes the alignment keys on the reticle, alignment targets on the substrate, and computes their positions and displacement from alignment. The relative alignment can be direct or inferred. Any angular and translational misalignment is calculated. The pattern recognition system then moves the substrate to be in alignment with the reticle.

Abstract: A system to transfer a pattern from a reticle to a substrate using a lens array having an arbitrarily wide image field that spans the width of the substrate. The disclosed system incorporates multiple, Wynne Dyson lenses arranged in serial pairs and staggered in position so that each dual serial Wynne Dyson lens system transfers a portion of the overall image from the reticle to the substrate as each are transported past the array of lens pairs. To transfer a complete, unbroken pattern on the substrate, each of the dual serial Wynne Dyson lens pairs are positioned in opposing and side-by-side positions and are staggered with respect to the scan direction. Each lens pair optionally includes individual internal adjustments, so that the pattern produced on the substrate does not contain any breaks or discontinuities.

Abstract: An optical system to project an image from an illuminated object to an image plane with a selected magnification factor. This system includes a lens system having a fixed magnification factor and at least one flat plate that is optically compatible with the lens system and which when bent into a cylindrical shape varies the fixed magnification factor of the lens system along one axis of the image. This variable magnification technique is applicable to all lens system types, including a Wynne Dyson type projection system. In addition, a Wynne Dyson optical projection system that includes an optical block in place of the usual fold prism is discussed. The optical block reduces changes in distortion caused by heat transferred from the reticle. The block permits the inclusion of a dichroic beamsplitter diagonally through the optical block which presents minimal attenuation of the exposure illumination.