Patents Assigned to Unaxis USA
  • Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
    Publication number: 20020068229
    Abstract: An embedded attenuated phase shift mask (“EAPSM”) includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active mask area. Conventional plasma etching techniques can be utilized without damage to the underlying quartz substrate. Alternatively, the etch stop layer comprises a transparent material that can remain intact in the mask structure.
    Type: Application
    Filed: November 30, 2001
    Publication date: June 6, 2002
    Applicant: UNAXIS USA INC.
    Inventors: Russell Westerman, Christopher Constantine