Abstract: A magnetoresistive random access memory (MRAM) device includes a memory array having a plurality of bitlines and a plurality of wordlines intersecting the bitlines. A plurality of memory elements are located at the intersections of the wordlines and the bitlines and are operable to store data. A bitline selection circuit is operable to select a first bitline and to provide a first sense current to the first bitline to generate a first reference signal. A wordline selection circuit is operable to select wordlines and to provide wordline currents to a selected wordline after the first reference signal has stabilized and while the first sense current is applied to the first bitline.