Patents Assigned to UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
  • Database journaling method and apparatus
    Patent number: 11042453
    Abstract: Provided is a database journaling method and apparatus for storing a log file in a storing apparatus by performing a lesser number of record commands to decrease a volume of data to be input and output by the storing apparatus, and the database journaling method may include determining whether a database is changed based on an operation performed on data in the database, generating a log file including log entries for the database when the database is changed, and performing journaling on the database by storing the generated log file in a storing apparatus, wherein each of the log entries includes a log record in which the data associated with a change of the database is stored, and metadata for the log record is recorded in a predetermined area embedded in the log record.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: June 22, 2021
    Assignees: IUCF-HYU(Industry-University Cooperation Foundation Hanyang University), UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: You Jip Won, Beom Seok Nam
  • BaSnOthin flim and low-temperature preparation method therefor
    Patent number: 11034590
    Abstract: The present invention relates to a method for preparing a BaSnO3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: June 15, 2021
    Assignees: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY, UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Jun Hong Noh, Seong Sik Shin, Jang Won Seo, Sang Il Seok
  • METHOD AND DEVICE WITH NEURAL NETWORK IMPLEMENTATION
    Publication number: 20210174177
    Abstract: A neural network device includes: an on-chip buffer memory that stores an input feature map of a first layer of a neural network, a computational circuit that receives the input feature map of the first layer through a single port of the on-chip buffer memory and performs a neural network operation on the input feature map of the first layer to output an output feature map of the first layer corresponding to the input feature map of the first layer, and a controller that transmits the output feature map of the first layer to the on-chip buffer memory through the single port to store the output feature map of the first layer and the input feature map of the first layer together in the on-chip buffer memory.
    Type: Application
    Filed: June 5, 2020
    Publication date: June 10, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyeongseok YU, Hyeonuk SIM, Jongeun LEE
  • Skyrmion diode and method of manufacturing the same
    Patent number: 11024726
    Abstract: The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: June 1, 2021
    Assignee: UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Ki Suk Lee, Dae Han Jeong, Hee Sung Han, Nam Kyu Kim
  • Water decomposition device and method of manufacturing the same
    Patent number: 11021798
    Abstract: A water decomposition device may include a hydrogen-generating electrode including a first external electrode and at least one first internal electrode formed integrally with the first external electrode, and an oxygen-generating electrode including a second external electrode and at least one second internal electrode formed integrally with the second external electrode. The first external electrode and the second external electrode are disposed to face each other, and the first internal electrode and the second internal electrode are disposed alternately in a direction perpendicular to the longitudinal direction thereof. Therefore, the water decomposition device may secure both transparency and durability even when an opaque material is used therefor.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: June 1, 2021
    Assignees: Hyundai Motor Company, Kia Motors Corporation, UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Jang-Su Park, Hee-Jun Kim, Tae-Won Lee, Jeong Min Baik
  • NONVOLATILE TERNARY MEMORY DEVICE USING TWO-DIMENSIONAL FERROELECTRIC MATERIAL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20210151446
    Abstract: The present disclosure relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. The method of manufacturing the nonvolatile ternary memory device according to an embodiment of the present disclosure includes (a) forming a lower electrode on a substrate, (b) forming a two-dimensional ferroelectric material on the lower electrode, (c) forming a semiconductor on the two-dimensional ferroelectric material, and (d) forming an upper electrode on the semiconductor.
    Type: Application
    Filed: December 2, 2019
    Publication date: May 20, 2021
    Applicant: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Jun Hee LEE, Ho Sik LEE
  • DIELECTRIC THIN FILM AND MEMCAPACITOR INCLUDING THE SAME
    Publication number: 20210143250
    Abstract: Provided is a dielectric thin film. The dielectric thin film includes: a plurality of ferroelectric domains including phonons having displacement in a direction of a first axis; and a plurality of spacers configured to block elastic interaction between the phonons, wherein the ferroelectric domains and the spacers are alternately and repeatedly arranged along a second axis which is perpendicular to the first axis.
    Type: Application
    Filed: November 27, 2019
    Publication date: May 13, 2021
    Applicant: UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Jun Hee LEE, Noejung PARK
  • Modeling method of tactility using nerve spike pattern, tactility model and manufacturing method of tactility using nerve spike pattern
    Patent number: 11003251
    Abstract: The present invention relates to a method of modeling a tactile sensation using a nerve spike pattern, a tactile sensation model, and a method of generating a tactile sensation using a nerve spike pattern and may include generating a nerve spike pattern by sequentially arranging action potential spike time points of a nerve responding to a specific pressure and modeling a pressure sensation for the pressure on the basis of the generated nerve spike pattern. According to the present invention, by checking how tactile sensation information is reflected in a nerve spike pattern, it is possible to provide a method capable of modeling various tactile sensations using the nerve spike pattern.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: May 11, 2021
    Assignees: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Sung Phil Kim, Ji Sung Park, Dong Pyo Jang, Sung Jun Jung
  • INTERCONNECT STRUCTURE AND ELECTRONIC APPARATUS INCLUDING THE SAME
    Publication number: 20210125929
    Abstract: An interconnect structure and an electronic apparatus including the interconnect structure are provided. The interconnect structure includes a conductive layer; a dielectric layer configured to surround at least a part of the conductive layer; and a diffusion barrier layer disposed between the conductive layer and the dielectric layer and configured to limit and/or prevent a conductive material of the conductive layer from diffusing into the dielectric layer, and at least one of the dielectric layer and the diffusion barrier layer includes a boron nitride layer of a low dielectric constant.
    Type: Application
    Filed: October 28, 2020
    Publication date: April 29, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyeonjin SHIN, Minhyun LEE, Changseok LEE, Hyeonsuk SHIN, Seokmo HONG
  • BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER
    Publication number: 20210123161
    Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
    Type: Application
    Filed: October 28, 2020
    Publication date: April 29, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Hyeonsuk SHIN, Hyeonjin SHIN, Seokmo HONG, Minhyun LEE, Seunggeol NAM, Kyungyeol MA
  • SEMICONDUCTOR MEMORY DEVICE AND APPARATUS INCLUDING THE SAME
    Publication number: 20210125930
    Abstract: A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.
    Type: Application
    Filed: October 28, 2020
    Publication date: April 29, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyeonjin SHIN, Minhyun LEE, Changseok LEE, Kyung-Eun BYUN, Hyeonsuk SHIN, Seokmo HONG
  • Secondary battery
    Patent number: 10992002
    Abstract: The present invention relates to a rechargeable battery, and a rechargeable battery including: a liquid cathode portion including a sodium-containing solution and a cathode current collector impregnated in the sodium-containing solution; an anode portion including a liquid organic electrolyte, an anode current collector impregnated in the liquid organic electrolyte, and an anode active material provided in the surface of the anode current collector; and a solid electrolyte provided between the cathode portion and the anode portion can be provided.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: April 27, 2021
    Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Young sik Kim, Jae Kwang Kim, Mooyoung Jung, Jin Hyup Han, Jeong Sun Park
  • Refrigerator and apparatus for fabricating the same
    Patent number: 10987757
    Abstract: A refrigerator includes a vacuum adiabatic body including a conductive resistance sheet providing a vacuum space that has a temperature between a temperature of an internal space and a temperature of an external space and is in a vacuum state, the conductive resistance sheet capable of resisting heat conduction between a first plate and a second plate, wherein at least one of the conductive resistance sheet and each of the first and second plates are welded to each other to create a welding part, wherein a plurality of regular beads are provided to a surface of the welding part, and wherein the plurality of regular beads includes: a parabolic inflection region provided at a center portion; linear regions respectively provided at both outsides of the inflection region; and edge regions respectively provided at outsides of the linear regions.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: April 27, 2021
    Assignees: LG ELECTRONICS INC., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Wonyeong Jung, Deokhyun Youn, Jangseok Lee, Hyungson Ki
  • ORGANIC THERMOELECTRIC MATERIAL AND THERMOELECTRIC GENERATOR INCLUDING THE SAME
    Publication number: 20210119100
    Abstract: Disclosed are an organic thermoelectric material and a thermoelectric generator including the same. More particularly, the thermoelectric generator includes an ionically conductive active layer containing a polyanion including an anionic group and a counter cation in a repeat unit thereof; a conductive polymer; and a polyvalent crosslinking agent as a single molecule including a plurality of acid functional groups. First and second electrodes are disposed to be connected to the ionically conductive active layer.
    Type: Application
    Filed: October 16, 2020
    Publication date: April 22, 2021
    Applicants: KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION, UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Ju-Won JEON, Sung-Yeon JANG
  • Composite anode active material, method of preparing the same, and lithium secondary battery including anode including composite anode active material
    Patent number: 10985370
    Abstract: Provided herein is a composite anode active material including: a porous carbon structure; a first coating layer on the porous carbon structure and including a non-carbonaceous material capable of intercalating and deintercalating lithium; and a second coating layer on the first coating layer and including a carbonaceous material.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: April 20, 2021
    Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Jae Phil Cho, Yeong Uk Son, Ji Young Ma, Nam Hyung Kim
  • BISMUTH VANADATE ELECTRODE COMPRISING VANADIUM-FUNCTIONALIZED GRAPHENE QUANTUM DOTS AND A PREPARATION METHOD THEREOF
    Publication number: 20210108318
    Abstract: The present disclosure relates to a bismuth vanadate electrode including vanadium-functionalized graphene quantum dots and a method for preparing the same. More particularly, it relates to a technology which is capable of, by adding graphene quantum dots (GQDs) in the process of immersing a bismuth vanadate (BiVO4) electrode in an alkaline solution to remove vanadium oxide (V2O5) excessively formed on the surface of the electrode during its preparation, protecting the electrode from the alkaline solution as the graphene quantum dots are adsorbed onto the surface of BiVO4 while V2O5 is removed, and improving the efficiency of oxygen evolution reaction (OER) when applied to a photoanode due to vanadium (V)-functionalized graphene quantum dots formed as the etched vanadium ions ((VO)43?) are adsorbed onto the graphene quantum dots.
    Type: Application
    Filed: July 17, 2020
    Publication date: April 15, 2021
    Applicants: S-Oil Corporation, UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Ji-Hyun JANG, Ki-Yong Yoon, Sungwoo Kwon, Nam Hyun Hur, Sang Cheol Paik
  • TRIBOELECTRIC GENERATOR
    Publication number: 20210083600
    Abstract: A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 18, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Jae-Young KIM, Kyungeun BYUN, Minsu SEOL, Hyeonjin SHIN, Jeongmin BAIK, Jinsung CHUN, Byeonguk YE
  • METHOD OF FABRICATING HEXAGONAL BORON NITRIDE
    Publication number: 20210066069
    Abstract: Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.
    Type: Application
    Filed: May 28, 2020
    Publication date: March 4, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Hyeonsuk SHIN, Hyeonjin SHIN, Seokmo HONG, Kyungyeol MA
  • Lidar sensor for vehicles and method of operating the same
    Patent number: 10935658
    Abstract: Disclosed are a lidar sensor for vehicles and a method of operating the same. In accordance with an embodiment of the present disclosure, the lidar sensor may include a first sensor configured to measure a distance to a target; and a second sensor configured to control output of a transmission signal considering the measured distance and measure a front including the target using the controlled transmission signal in high resolution.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: March 2, 2021
    Assignees: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Seung Han Park, Young Cheol Chae, Seong Jin Kim
  • Display device
    Patent number: D923001
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: June 22, 2021
    Assignees: Samsung Display Co., Ltd., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Ja Eun Lee, Gyouhyung Kyung, Ji Hyeon Yang, Seungbae Lee, Byeonghwa Choi, Soo Yeon Seo, Minjoong Kim, Sungryul Park, Songil Lee, Jihhyeon Yi, Donghee Choi