Abstract: LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.
Abstract: LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.
Abstract: A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.