Patents Assigned to Unitd Microelectronics Corp.
  • Semiconductor structure
    Patent number: 7453120
    Abstract: A method for fabricating a semiconductor structure is described. A substrate is provided, having thereon a gate structure and a spacer on the sidewall of the gate structure and having therein an S/D extension region beside the gate structure. An opening is formed in the substrate beside the spacer, and then an S/D region is formed in or on the substrate at the bottom of the opening. A metal silicide layer is formed on the S/D region and the gate structure, and then a stress layer is formed over the substrate.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: November 18, 2008
    Assignee: Unitd Microelectronics Corp.
    Inventors: Shyh-Fann Ting, Cheng-Tung Huang, Wen-Han Hung, Li-Shian Jeng, Tzyy-Ming Cheng