Abstract: A light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductibility and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only, requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.

Abstract: A method for fabricating high efficiency light-emitting diode (LED) adhered to a transparent substrate is disclosed. To begin with, forming a semiconductor substrate, is followed by sequentially forming an etching stopper, a first type ohmic contact layer, a double heterostructure and a second ohmic contact layer. Afterwards, the transparent substrate, such as preferably glass, is adhered onto the second ohmic contact layer and then the GaAs substrate is removed away. After that, the first type cladding layer and the undoped active layer is etched in turn by using the second type ohmic contact layer as the etching stopper. Finally, a first electrode is formed on the first type ohmic contact layer and a second electrode is formed on the second type ohmic contact layer, respectively. The present invention utilizes some features, such as high transmittance and lower absorptivity, of the glass adhered to the second ohmic contact layer to visible light for increasing luminous intensity of the LED.

Abstract: A method for fabricating high efficiency light-emitting diode (LED) adhered to a transparent substrate is disclosed. To begin with, forming a semiconductor substrate, is followed by sequentially forming an etching stopper, a first type ohmic contact layer, a double heterostructure and a second ohmic contact layer. Afterwards, the transparent substrate, such as preferably glass, is adhered onto the second ohmic contact layer and then the GaAs substrate is removed away. After that, the first type cladding layer and the undoped active layer is etched in turn by using the second type ohmic contact layer as the etching stopper. Finally, a first electrode is formed on the first type ohmic contact layer and a second electrode is formed on the second type ohmic contact layer, respectively. The present invention utilizes some features, such as high transmittance and lower absorptivity, of the glass adhered to the second ohmic contact layer to visible light for increasing luminous intensity of the LED.

Abstract: A method of making a light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductivity and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.